Cypress Semiconductor Corp CY7C14141KV18-300BZXC

Overview

CY7C14141KV18 from Cypress Semiconductor is a 1M × 36-bit (36-Mbit), 1.8V QDR® II SRAM with dual DDR interfaces, 333 MHz clock support (666 MHz data rate), 1.5-cycle read latency (DOFF = HIGH), and synchronous self-timed writes - deployed in high-bandwidth packet buffering for telecom line cards.

For engineers reviewing the CY7C14141KV18 datasheet, CY7C14141KV18 pinout, CY7C14141KV18 application, or CY7C14141KV18 equivalent, key selection criteria include x36 burst width, FBGA-165 package compatibility, echo clock (CQ/CQ) timing margining, and DOFF-configurable read latency mode.

Technical Context

The CY7C14141KV18 implements true QDR II architecture with physically separate read and write ports sharing one multiplexed address bus, enabling fully concurrent read/write transactions without bus turnaround. It uses two independent input clocks (K/K) for address/data capture and two output clocks (C/C) plus echo clocks (CQ/CQ) to align data capture at the receiver.

Internally, it features a 512K × 36 memory array organized as two 256K × 36 banks, with synchronous latching on rising K edges for both read and write addresses, and PLL-based precise data placement. Write operations are self-timed and fully pipelined, supporting byte-level write masking via BWS[3:0].

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C14121KV18, CY7C14141KV18 provides native x36 interface reducing routing complexity and layer count; compared with AS7C33618B-333BIN, it offers legacy footprint compatibility but lacks extended temperature support and improved power specs.

Availability

CY7C14141KV18 is available at Aetrix Electronics and suitable for telecom infrastructure, network processor interfacing, baseband processing, and ATE pattern memory applications requiring stable component supply and long-term obsolescence management.

Supply support for CY7C14141KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, computing, and industrial systems.

The QDR II SRAM product line targets high-throughput, low-latency buffering in networking and signal processing systems where concurrent read/write and precise timing control are critical.

FAQ

What is the function of the DOFF pin on CY7C14141KV18?

The DOFF (Data-Off) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for improved timing margin in high-speed systems; when LOW, it selects 1-cycle latency for minimal delay in latency-sensitive control paths. This setting is sampled synchronously on the K clock and remains effective until changed.

How does the CY7C14141KV18 handle partial writes?

It uses four active-low Byte Write Select signals (BWS[3:0]) to enable or mask individual 9-bit byte lanes within the 36-bit word. Each BWS bit controls nine consecutive data bits (e.g., BWS0 → D[8:0]), allowing selective updating without read-modify-write cycles - essential for descriptor or metadata updates in packet processing.

Can CY7C14141KV18 operate with only one clock domain?

Yes - it supports single-clock mode where K and C are driven by the same source, and CQ/CQ are disabled. In this mode, timing margins tighten significantly; the device still requires separate K/K for address latching but uses identical phase for all clocks. Full performance and skew tolerance require dual-clock operation.

What is the purpose of the NC/72M, NC/144M, and NC/288M pins?

These are no-connect pins tied to unused bond pads from larger-die QDR II+ derivatives (72M/144M/288M). They are electrically isolated from the die and may be left floating or tied to any voltage level (VSS, VDD, or VDDQ) without affecting functionality - used solely for package compatibility across the product family.