Cypress Semiconductor Corp CY7C1414BV18-200BZI
- Part No.:
- CY7C1414BV18-200BZI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1414BV18-200BZI.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1414BV18-200BZI from Cypress Semiconductor is a 1M × 36-bit, 36-Mbit QDR® II SRAM with synchronous pipelined architecture, dual independent read/write ports, 200 MHz operation (500 MT/s DDR), 1.5-cycle read latency (DLL enabled), and HSTL I/O interface. It delivers high-bandwidth buffering for network packet processing in telecom line cards.
For engineers reviewing the CY7C1414BV18-200BZI datasheet, CY7C1414BV18-200BZI pinout, CY7C1414BV18-200BZI application, or CY7C1414BV18-200BZI equivalent, key selection criteria include burst depth (2-word), DLL-enabled timing mode, x36 data width, FBGA-165 package compatibility, and QDR II–specific echo clock (CQ/CQ) synchronization requirements.
Technical Context
This device implements true dual-port QDR II architecture: separate K/K clocks latch write addresses and data, while C/C clocks drive read outputs with echo clocks CQ/CQ referenced to output clocks for precise deskew. All inputs are registered on rising edges of K or K; all outputs are edge-aligned to C or C.
It supports both DLL-on (1.5-cycle read latency, up to 250 MHz) and DLL-off (1-cycle latency, QDR I mode, ≤167 MHz) operation via DOFF pin control. Internal organization is two 512K × 36 arrays, accessed via 19-bit multiplexed address bus (A[18:0]), with byte write select (BWS[3:0]) enabling partial-word writes without read-modify-write overhead.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (1M × 36 configuration) |
| Max Clock Frequency | 200 MHz - enables 500 MT/s effective data rate on both read/write DDR interfaces |
| Read Latency | 1.5 cycles (DLL enabled) - deterministic timing for pipeline-synchronized systems |
| Core Supply | VDD = 1.8 V ±0.1 V - defines core logic voltage domain and power consumption envelope |
| I/O Supply | VDDQ = 1.4 V to 1.8 V - sets HSTL Class I output drive strength and termination reference |
| Burst Length | 2-word - fixed burst transfers two consecutive 36-bit words per access, eliminating variable-length arbitration |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - surface-mount footprint compatible with high-density PCB routing and thermal management |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | Latched on rising edges of K/K; full 36-bit parallel input path for burst writes |
| Q[35:0] | Synchronous read data output | DDR-driven on rising edges of C/C; tristated automatically when RPS deasserted |
| RPS / WPS | Active-low port enable | Separate controls for read and write ports-enables independent depth expansion without bus turnaround |
| BWS[3:0] | Byte write select | Four independent active-low signals controlling 9-bit byte lanes; allows partial 36-bit word updates |
| C / C, K / K | Differential clock inputs | K/K for address/data capture; C/C for output timing and echo clock generation (CQ/CQ) |
| CQ / CQ | Output-referenced echo clocks | Free-running, phase-aligned copies of C/C-used by controller for source-synchronous data capture |
| ZQ | Impedance calibration reference | Connects to external resistor to ground to tune Q[35:0] and CQ/CQ output impedance to 0.2 × RQ |
| DOFF | DLL disable control | Active-low pin forcing QDR I timing mode (1-cycle latency) and limiting max frequency to 167 MHz |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Eliminates data bus turnaround delay and contention-enables concurrent memory access in full-duplex systems |
| 2-word DDR burst on all accesses | Guarantees predictable 72-bit (x36) throughput per cycle-simplifies scheduler design in packet buffers |
| Programmable DLL mode (DOFF) | Switches between 1.5-cycle (QDR II) and 1-cycle (QDR I) latency-supports migration across speed grades |
| HSTL Class I I/O with ZQ calibration | Ensures signal integrity at 500 MT/s with programmable drive strength matched to board trace impedance |
| JTAG 1149.1 test access port | Enables boundary scan testing and in-system debug without requiring additional test pads or probes |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer with simultaneous read/write capability. Use Value: 500 MT/s DDR bandwidth and 2-word burst support reduce packet queuing delay by eliminating bus turnaround overhead. |
Use Scenario: Frame assembly/disassembly in OC-192/STM-64 SONET/SDH line cards. IC Role / Device Role / Timing Role: Synchronous pipeline memory for time-critical cell/frame reordering. Use Value: 1.5-cycle DLL-enabled read latency ensures deterministic timing alignment with SerDes clock domains. |
| Baseband Processing Buffer | High-Speed Test Equipment Memory |
|
Use Scenario: Temporary storage of IQ samples between FPGA-based channelizers and DSP cores in 4G/LTE base stations. IC Role / Device Role / Timing Role: Dual-port SRAM acting as a decoupling buffer between asynchronous processing stages. Use Value: Independent RPS/WPS enables seamless handoff of sample blocks without arbitration or stall cycles. |
Use Scenario: Pattern memory in automated test equipment (ATE) for high-speed digital IC validation. IC Role / Device Role / Timing Role: Deterministic-access memory for stimulus/response vector storage and playback. Use Value: Echo clocks (CQ/CQ) provide precise source-synchronous timing references for sub-nanosecond capture windows. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C33618B-200BIN | 36-Mbit QDR II+ (not QDR II); supports 250 MHz, enhanced DLL, no DOFF pin | Requires DLL always enabled; lacks QDR I fallback mode and JTAG test port | Select when maximum 250 MHz performance and tighter jitter specs are required; not drop-in compatible due to pinout and control differences |
| IS61WV102436B-200TQLI | 36-Mbit QDR II; same 200 MHz spec, but uses 165-pin TQFP instead of FBGA | Lower thermal performance and higher signal skew due to leaded package; no ZQ calibration | Choose only for legacy TQFP-based designs where board rework is prohibitive; avoid for new high-speed layouts |
Compared with AS7C33618B-200BIN and IS61WV102436B-200TQLI, CY7C1414BV18-200BZI uniquely combines DLL configurability (via DOFF), JTAG testability, ZQ impedance tuning, and FBGA packaging optimized for 500 MT/s signal integrity-making it preferred for telecom infrastructure upgrades requiring field-programmable timing modes.
Availability
CY7C1414BV18-200BZI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processing requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.
Supply support for CY7C1414BV18-200BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial and communications markets.
CY7C1414BV18 belongs to the QDR II SRAM product line, designed specifically for deterministic, high-bandwidth memory interfacing in networking and telecom infrastructure where dual-port concurrency and sub-cycle latency are critical.
FAQ
What is the function of the DOFF pin on CY7C1414BV18-200BZI?
The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and a maximum frequency of 167 MHz. When HIGH (typically via 10-kΩ pull-up), DLL is enabled, supporting 200 MHz operation with 1.5-cycle latency and tighter timing margins. This pin directly determines timing mode and frequency ceiling.
How does the ZQ pin affect output drive strength?
The ZQ pin connects to an external resistor (RQ) tied to ground, enabling on-die impedance calibration. The device tunes its Q[35:0] and CQ/CQ output drivers to 0.2 × RQ, matching system trace impedance for optimal signal integrity. If ZQ is tied directly to VDDQ, minimum output impedance is selected; connecting ZQ to GND or leaving it floating is prohibited and may cause functional failure.
Can CY7C1414BV18-200BZI operate with a single clock domain?
Yes. In single-clock mode, K and C are driven by the same clock source (and similarly K and C), allowing all registers to be clocked from one differential pair. This simplifies clock distribution but reduces flexibility in deskewing-echo clocks CQ/CQ remain referenced to C/C, so timing margin analysis must account for combined clock-to-out and clock-to-CQ delays under this configuration.
What is the purpose of BWS[3:0] in x36 configuration?
BWS[3:0] are four independent active-low byte write select signals, each controlling a 9-bit lane of the 36-bit data bus (BWS0: D[8:0], BWS1: D[17:9], BWS2: D[26:18], BWS3: D[35:27]). They allow partial-word writes without requiring a prior read-modify-write cycle-critical for efficient header updates in packet processing where only specific fields change per frame.
CY7C1414BV18-200BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1414BV18-200BZI FAQ
1.How can I place an order for CY7C1414BV18-200BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1414BV18-200BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1414BV18-200BZI reliable?
The price and inventory of CY7C1414BV18-200BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1414BV18-200BZI is usually 5 days.
3.What payment methods are accepted for CY7C1414BV18-200BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1414BV18-200BZI transactions.
Note: Certain payment methods may incur a processing fee.
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CY7C1414BV18-200BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1414BV18-200BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1414BV18-200BZI?
For technical support, including CY7C1414BV18-200BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1414BV18-200BZI requirements.
6.How does Aetrix verify that CY7C1414BV18-200BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1414BV18-200BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1414BV18-200BZI meets industry standards.
7.What is the process for return or replacement of CY7C1414BV18-200BZI?
All CY7C1414BV18-200BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1414BV18-200BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1414BV18-200BZI part is unused and in its original packaging.
Return procedure for CY7C1414BV18-200BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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