Cypress Semiconductor Corp CY7C1415AV18-200BZC
- Part No.:
- CY7C1415AV18-200BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1415AV18-200BZC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:100
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Product details
Overview
CY7C1415AV18 from Cypress Semiconductor is a 1M × 36-bit, 36-Mbit QDR-II SRAM with synchronous pipelined architecture, dual independent read/write ports, 200 MHz clock operation (600 MHz DDR data rate), and 165-ball FBGA package. It delivers full data coherency, HSTL I/O compatibility, and on-chip DLL for precise timing in high-bandwidth networking buffers and packet memory applications.
For engineers reviewing the CY7C1415AV18 datasheet, CY7C1415AV18 pinout, CY7C1415AV18 application, or CY7C1415AV18 equivalent, key selection criteria include burst depth (4-word), port independence, echo clock support (CQ/CQ), VDDQ = 1.4–1.8 V range, and x36 bus width for parallel data throughput in switch fabric controllers.
Technical Context
This device implements QDR-II architecture with physically separate read and write data paths-no bus turnaround required. Address inputs are multiplexed and latched on alternating rising edges of K/K clocks, enabling concurrent read/write operations at full bandwidth.
Read data is output-synchronized to C/C clocks with echo clocks (CQ/CQ) referenced to those outputs, minimizing skew in multi-device systems. Internal self-timed writes and DLL-controlled data placement ensure deterministic timing across temperature and voltage variations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (1M × 36-bit organization) |
| Maximum Clock Frequency | 200 MHz - defines maximum sustained transaction rate per port |
| Data Rate | 600 MHz DDR - enables 4-word burst transfers per clock cycle on both ports |
| Core Supply Voltage | VDD = 1.8 V ± 0.1 V - powers internal logic and array; strict tolerance ensures timing stability |
| I/O Supply Voltage | VDDQ = 1.4 V to 1.8 V - supports HSTL-18 I/O standard with programmable drive strength |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - surface-mount, thermally enhanced, RoHS-compliant |
| Timing Architecture | Delay Lock Loop (DLL) - aligns internal data launch to output clocks for sub-cycle setup/hold margin |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, lead-free and Pb-free options available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | 36-bit parallel data sampled on rising edge of K/K; supports byte-level write masking via BWS[3:0] |
| Q[35:0] | Synchronous read data output | 36-bit parallel data driven on rising edges of C/C; tri-stated when RPS is deasserted |
| RPS | Read port select | Active-low signal initiating 4-word burst read; sampled on rising edge of K |
| WPS | Write port select | Active-low signal initiating 4-word burst write; sampled on rising edge of K |
| BWS[3:0] | Byte write select | Four active-low signals controlling which 9-bit bytes (D[8:0], D[17:9], D[26:18], D[35:27]) are written |
| C, C | Output data clocks | Differential pair driving read data; used with CQ/CQ for deskewed capture at controller |
| K, K | Input command clocks | Differential pair latching address, RPS, WPS, BWS, and D[35:0]; all operations triggered on rising edge of K |
| CQ, CQ | Echo clocks | Free-running copies of C/C, synchronized to output data edges-enables source-synchronous capture without routing delay matching |
| ZQ | Impedance calibration reference | Connect to external 240 Ω resistor to GND to calibrate output driver impedance to 48 Ω (0.2 × RQ) |
| DOFF | DLL disable control | Active-low input disabling internal DLL; alters timing parameters-used only for specific low-power or test modes |
| TCK/TMS/TDI/TDO | JTAG boundary scan interface | IEEE 1149.1 compliant test access port for production testing and debug |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Eliminates bus turnaround overhead and enables true concurrent access-critical for full-duplex packet buffering |
| 4-word burst architecture | Reduces address bus frequency by 4× versus single-word access-lowers PCB routing complexity and timing closure effort |
| HSTL-18 compatible I/O | Supports 1.4–1.8 V VDDQ with variable drive strength-ensures signal integrity at 600 Mbps per pin in dense backplane designs |
| Echo clock outputs (CQ/CQ) | Provides source-synchronous timing references aligned to Q[35:0] edges-removes need for precise trace length matching in high-speed layouts |
| On-chip Delay Lock Loop (DLL) | Compensates for process/voltage/temperature drift to maintain < ±50 ps data-to-clock alignment-guarantees timing margin at 200 MHz |
Applications
| High-Speed Network Switch Buffers | Telecom Line Card Packet Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switching ASICs with real-time forwarding decisions. IC Role / Device Role / Timing Role: Dual-port SRAM serving as shared buffer between ingress parser and egress scheduler-reads and writes occur simultaneously without arbitration delay. Use Value: 36-bit bus width matches typical header field alignment; 4-word burst delivers 144 bits/cycle at 200 MHz, sustaining >28 Gbps aggregate bandwidth per device. | Use Scenario: Buffering ATM or Ethernet frames in carrier-grade optical line cards requiring deterministic latency and zero packet loss. IC Role / Device Role / Timing Role: Dedicated packet memory interfacing directly to SerDes PHYs and traffic manager units-CQ/CQ clocks enable reliable capture at 600 Mbps per lane. Use Value: DLL-controlled output timing and HSTL-18 I/O ensure < 100 ps jitter accumulation across 16+ devices in daisy-chained configurations. |
| Baseband Processing in 4G/LTE Radio Units | Real-Time Video Frame Buffering |
Use Scenario: Temporary storage of OFDM symbol samples between FFT processing stages in distributed radio units (RRUs). IC Role / Device Role / Timing Role: High-throughput memory for interleaved read/write of complex IQ data-RPS/WPS allow independent scheduling of upstream/downstream symbol pipelines. Use Value: Full data coherency guarantees latest processed symbols are always available; 1.8 V core reduces dynamic power in thermally constrained RF enclosures. | Use Scenario: Frame store for uncompressed 1080p60 video streams in broadcast graphics engines and medical imaging displays. IC Role / Device Role / Timing Role: Dual-port buffer decoupling pixel readout (camera sensor) from pixel rendering (GPU/FPGA)-eliminates frame tearing and motion artifacts. Use Value: x36 bus width supports 32-bit RGB + 4-bit alpha per pixel; 200 MHz clock enables 7.2 Gbps sustained bandwidth-sufficient for dual 1080p60 streams. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1413AV18 | 2M × 18-bit (36 Mbit), same QDR-II architecture, 19-bit address bus, BWS[1:0] instead of BWS[3:0] | Requires two devices for x36 interface; higher pin count per Mbit but lower per-pin capacitance | Select when board layout favors narrower bus width or legacy 18-bit datapath compatibility is required |
| AS7C336100B-200BIN | 1M × 36-bit QDR-II+ SRAM, 200 MHz, 165-ball FBGA, but uses SSTL-18 I/O and lacks echo clocks (CQ/CQ) | No built-in deskew capability-requires tighter PCB trace matching and external timing compensation | Select when cost sensitivity outweighs timing margin requirements or when existing SSTL-18 infrastructure exists |
Compared with CY7C1413AV18 and AS7C336100B-200BIN, CY7C1415AV18 provides native x36 interface with echo clocks and HSTL-18 I/O-reducing system-level timing validation effort and enabling higher channel counts in space-constrained telecom modules.
Availability
CY7C1415AV18 is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, and baseband processing in 4G/LTE radio units requiring stable component supply and long-term industrial availability.
Supply support for CY7C1415AV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial markets.
CY7C1415AV18 belongs to the QDR-II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory in packet-switched infrastructure where bus turnaround overhead must be eliminated.
FAQ
What is the minimum VDDQ voltage supported by CY7C1415AV18?
The device supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V is not guaranteed-HSTL-18 output drive strength and timing parameters are specified only within this range. Using 1.4 V minimizes I/O power while maintaining full AC performance at 200 MHz.
Can CY7C1415AV18 operate without the DLL enabled?
Yes-asserting DOFF (low) disables the DLL, placing the device in static timing mode. However, AC characteristics change significantly: tAC increases by up to 1.2 ns, and setup/hold margins shrink. This mode is intended only for functional verification or ultra-low-power standby-not for normal operation at 200 MHz.
How many address bits does CY7C1415AV18 require?
It requires 18 address bits (A[17:0]) to access the full 1M × 36-bit array. The internal organization is four 256K × 36 banks, and address multiplexing allows full addressing with a single 18-bit bus shared between read and write ports.
Is ZQ pin mandatory for operation?
ZQ must be connected-either to a 240 Ω resistor to ground (for calibrated 48 Ω output impedance) or directly to VDDQ (for minimum impedance mode). Leaving ZQ floating or tied to VSS violates Absolute Maximum Ratings and may cause output driver instability or excessive current draw.
CY7C1415AV18-200BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1415AV18-200BZC FAQ
1.How can I place an order for CY7C1415AV18-200BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1415AV18-200BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1415AV18-200BZC reliable?
The price and inventory of CY7C1415AV18-200BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1415AV18-200BZC is usually 5 days.
3.What payment methods are accepted for CY7C1415AV18-200BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1415AV18-200BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1415AV18-200BZC?
CY7C1415AV18-200BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1415AV18-200BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1415AV18-200BZC?
For technical support, including CY7C1415AV18-200BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1415AV18-200BZC requirements.
6.How does Aetrix verify that CY7C1415AV18-200BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1415AV18-200BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1415AV18-200BZC meets industry standards.
7.What is the process for return or replacement of CY7C1415AV18-200BZC?
All CY7C1415AV18-200BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1415AV18-200BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1415AV18-200BZC part is unused and in its original packaging.
Return procedure for CY7C1415AV18-200BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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