Cypress Semiconductor Corp CY7C1415AV18-250BZC

Overview

CY7C1415AV18 from Cypress Semiconductor is a 1M × 36-bit, 36-Mbit QDR-II SRAM with separate read/write ports, 250 MHz clock operation (600 Mbps DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements synchronous pipelined burst reads/writes with four-word bursts per access and supports depth expansion via port selects in high-bandwidth networking line cards.

For engineers reviewing the CY7C1415AV18 datasheet, CY7C1415AV18 pinout, CY7C1415AV18 application, or CY7C1415AV18 equivalent, key selection criteria include its dual-clock DDR timing architecture, echo clock (CQ/CQ) support for skew compensation, HSTL-compatible I/O, JTAG 1149.1 testability, and 165-ball FBGA package compatibility with high-speed memory subsystems.

Technical Context

The CY7C1415AV18 uses QDR-II architecture with fully independent read and write ports sharing a single multiplexed address bus. Address latching occurs on alternating rising edges of K/K clocks, enabling concurrent read/write operations without bus turnaround.

It employs a Delay Lock Loop (DLL) for precise data placement, echo clocks (CQ/CQ) referenced to C/C for receiver deskewing, and variable-drive HSTL output buffers. Write operations are internally self-timed and synchronized to K/K, while read data is clocked out on C/C with programmable impedance tuning via ZQ.

Key Specifications

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA) package, 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant (Pb-free option available).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Compared with CY7C1415AV18-250BZC, the BZI variant extends thermal range without performance trade-off, while the AS7C362000B offers higher density but sacrifices 20% bandwidth and eliminates on-die impedance tuning-requiring external termination design effort.

Availability

CY7C1415AV18-250BZC is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor interfaces, baseband processing memory, and ATE pattern memory requiring stable component supply and long-term obsolescence planning.

Supply support for CY7C1415AV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and mixed-signal ICs for communications, industrial, and automotive markets, with emphasis on signal integrity and system-level timing robustness.

The QDR-II SRAM product line targets high-throughput, low-latency memory subsystems in networking infrastructure-specifically engineered to replace asynchronous SRAM and simplify DDR-based controller design with deterministic timing.

FAQ

What is the function of the ZQ pin on CY7C1415AV18-250BZC?

The ZQ pin calibrates the output driver impedance of Q[35:0] and echo clocks CQ/CQ to match the system data bus characteristic impedance. It must be connected to a precision 240 Ω resistor to ground (setting output Z₀ ≈ 48 Ω) or directly to VDDQ for minimum impedance mode. Leaving ZQ floating or tied to GND violates specification and causes signal integrity failure.

Can CY7C1415AV18-250BZC operate with only a single clock (K) instead of differential K/K?

Yes-CY7C1415AV18-250BZC supports single-clock mode where K serves as both positive and negative clock input. In this configuration, C/C must also be driven single-ended, and echo clocks CQ/CQ derive from K. Setup/hold margins tighten slightly, and maximum frequency may reduce by ~10% versus differential mode due to increased jitter sensitivity.

How does the 4-word burst architecture affect address bus utilization?

The 4-word burst reduces effective address bus toggling frequency by 4×: one address initiates four sequential 36-bit word transfers. For a 1M × 36-bit device, only 18 address lines (A[17:0]) are required-enabling compact routing and lower capacitive loading. The controller must generate only one address per burst, simplifying logic and reducing timing closure complexity.

What happens to Q[35:0] outputs when RPS is deasserted during an active read burst?

When RPS is deasserted, the current read burst completes normally, and Q[35:0] drivers are automatically tri-stated on the next rising edge of the C clock. No additional control signals or wait states are required. This behavior ensures clean bus release and prevents contention in multi-SRAM depth-expanded configurations.