Cypress Semiconductor Corp CY7C1420AV18-250BZC

Overview

CY7C1420AV18-250BZC from Cypress Semiconductor is a 36 Mbit (1M × 36) synchronous pipelined DDR II SRAM with two-word burst architecture, 250 MHz maximum operating frequency, 1.8 V core supply, and HSTL I/O compatible with 1.4–1.8 V output drive range. It supports precise DDR timing via dual K/K input clocks and dual C/C output clocks, and delivers 600 Mbps effective data rate in high-bandwidth networking buffers and packet memory applications.

For engineers reviewing the CY7C1420AV18-250BZC datasheet, CY7C1420AV18-250BZC pinout, CY7C1420AV18-250BZC application, or CY7C1420AV18-250BZC equivalent, key selection criteria include burst-mode latency, DLL-enabled data placement accuracy, echo clock (CQ/CQ) synchronization for multi-device capture, byte write select granularity (BWS[3:0]), and FBGA-165 package thermal/mechanical compatibility with high-density PCB layouts.

Technical Context

This SRAM implements a synchronous pipelined architecture where all address, control, and data inputs are registered on rising edges of complementary K/K clocks, and all read outputs are edge-aligned to rising edges of complementary C/C clocks (or K/K in single-clock mode). The internal burst counter uses A0 to generate sequential 36-bit word addresses, enabling two-word bursts without external address incrementing.

The device integrates a Delay Lock Loop (DLL) for sub-nanosecond data-to-clock alignment, echo clocks (CQ/CQ) referenced to C/C for simplified system-level data capture, and ZQ impedance calibration for HSTL output matching to 0.2×RQ. Byte write select logic (BWS[3:0]) operates synchronously with K/K and enables independent 9-bit byte masking during writes.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with IS61WV102436BLL-250BLI and R1EX24036AS-250FBG#U0, CY7C1420AV18-250BZC uniquely combines DLL-based data alignment with source-synchronous CQ/CQ echo clocks-enabling robust 600 Mbps operation across multi-SRAM topologies without controller-level timing compensation.

Availability

CY7C1420AV18-250BZC is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, and test equipment waveform memory requiring stable component supply, long-term lifecycle support, and Pb-free compliance.

Supply support for CY7C1420AV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

CY7C1420AV18 belongs to the DDR II SyncBurst SRAM product line, engineered specifically for deterministic-latency, high-throughput memory subsystems in networking infrastructure and real-time instrumentation where burst efficiency and clock alignment are critical.

FAQ

What is the function of the ZQ pin on CY7C1420AV18-250BZC?

The ZQ pin is an impedance calibration reference input. It must be connected to a precision resistor (RQ) tied to ground to calibrate the output driver impedance to 0.2×RQ, ensuring HSTL-compatible signal integrity. Direct connection to VDDQ enables minimum impedance mode; floating or grounding ZQ is prohibited and will cause undefined output behavior.

Can CY7C1420AV18-250BZC operate without the C/C output clocks?

Yes - it supports single-clock mode where K/K clocks control both input registration and output timing. In this mode, C and C must be strapped HIGH at power-on. All timing parameters remain identical to DDR mode, but echo clocks (CQ/CQ) are generated relative to K/K instead of C/C, and system-level deskew capability is reduced.

How does the two-word burst architecture affect address sequencing?

The internal burst counter uses A0 to generate consecutive 36-bit addresses. When LD and R/W are asserted, only one address is presented externally; the device automatically accesses two sequential locations (A[19:0] and A[19:0]+1) without additional address bus activity, halving address transition count per 72-bit transfer.

What is the role of BWS[3:0] during a write operation?

BWS[3:0] are synchronous byte write enable signals sampled on K/K rising edges. Each controls a 9-bit byte lane (D[8:0], D[17:9], D[26:18], D[35:27]). Deasserting any BWS bit preserves the corresponding byte in memory during write, enabling partial-word updates without read-modify-write overhead.