Cypress Semiconductor Corp CY7C1425AV18-200BZXC

Overview

CY7C1425AV18-200BZXC from Cypress Semiconductor is a 4M × 9 (36-Mbit) QDR-II™ SRAM with separate read/write ports, 200 MHz clock operation, DDR interfaces delivering 400 MT/s effective data rate, and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It supports concurrent read/write transactions in high-bandwidth networking buffers and packet classification engines.

For engineers reviewing the CY7C1425AV18-200BZXC datasheet, CY7C1425AV18-200BZXC pinout, CY7C1425AV18-200BZXC application, or CY7C1425AV18-200BZXC equivalent, key selection criteria include burst depth (2-word), I/O voltage (VDDQ = 1.4–1.8 V), HSTL-compatible drive strength, DLL-enabled timing accuracy, and JTAG 1149.1 test access support.

Technical Context

The device implements a synchronous pipelined architecture with independent K/K input clocks for address/data capture and C/C output clocks for data launch, enabling precise DDR timing without bus turnaround. Its dual-port structure eliminates contention by dedicating D[8:0] to write and Q[8:0] to read paths.

Internal self-timed writes, echo clocks (CQ/CQ) synchronized to C/C, and ZQ impedance calibration ensure signal integrity at 400 MT/s. The Delay Lock Loop (DLL) aligns internal timing to minimize skew between clock and data edges across temperature and voltage.

Key Specifications

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA) package, 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant lead-free finish (BZXC suffix). Pin layout optimized for high-speed DDR routing with dedicated echo clocks, impedance calibration (ZQ), and differential clock pairs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR-II SRAM applications.

Compared with CY7C1425AV18-250BZXC, the -200BZXC trades 50 MHz headroom for lower power and relaxed timing margins; versus AS7C33618A-200BIN, it provides superior high-speed signal integrity via integrated DLL, echo clocks, and ZQ calibration-critical for >200 MHz designs.

Availability

CY7C1425AV18-200BZXC is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, and baseband processing memory requiring stable component supply and long-term industrial lifecycle support.

Supply support for CY7C1425AV18-200BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems.

This device belongs to the QDR-II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in networking and signal processing infrastructure.

FAQ

What is the function of the ZQ pin on CY7C1425AV18-200BZXC?

The ZQ pin is an impedance calibration reference input that connects to an external resistor to ground (typically 240 Ω). It enables the device to dynamically adjust its output driver impedance to match the system data bus, ensuring optimal signal integrity at 400 MT/s. It must never be left floating or tied directly to GND.

Can CY7C1425AV18-200BZXC operate in single-clock mode?

Yes. When C and C are tied together and driven by K (or K), the device operates in single-clock mode. In this configuration, Q[8:0] data is launched on the rising edges of K/K instead of C/C, and CQ/CQ are generated relative to K. AC timing parameters differ from dual-clock mode and are specified separately in the datasheet.

What does "BZXC" signify in the part number CY7C1425AV18-200BZXC?

The "BZXC" suffix indicates a 165-ball FBGA package (B), lead-free finish (Z), commercial temperature range (0°C to +70°C) (X), and tape-and-reel packaging (C). This distinguishes it from industrial-grade (I) or tray-packaged (T) variants and confirms RoHS compliance.

How does the DLL improve timing performance in CY7C1425AV18-200BZXC?

The integrated Delay Lock Loop (DLL) continuously adjusts internal delay paths to align data valid windows with clock edges across voltage and temperature variations. At 200 MHz, it maintains clock-to-Q skew within ±50 ps, enabling reliable 400 MT/s operation without manual timing margining or external phase alignment circuitry.