Infineon Technologies CY7C1472BV33-200BZCT

Overview

CY7C1472BV33-200BZCT from Cypress Semiconductor is a 3.3 V, 4M × 18 (72-Mbit) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput back-to-back read/write operations in networking and telecom data paths. It supports 200 MHz bus operation with zero wait states, features fully registered I/O, byte-write capability via BWa–BWb, and internal self-timed output control eliminating asynchronous OE timing constraints.

For engineers reviewing the CY7C1472BV33-200BZCT datasheet, CY7C1472BV33-200BZCT pinout, CY7C1472BV33-200BZCT application, or CY7C1472BV33-200BZCT equivalent, this device delivers deterministic 3.0 ns clock-to-output timing, synchronous burst (linear/interleaved), JTAG boundary scan compliance, and dual-voltage I/O support (3.3 V core / 2.5 V or 3.3 V I/O).

Technical Context

The CY7C1472BV33-200BZCT implements a fully synchronous, pipelined memory interface where all address, control, and data signals are registered on the rising edge of CLK. Its NoBL™ logic enables true back-to-back accesses without bus latency by decoupling address latching from data transfer timing.

It uses three chip enables (CE1 active-low, CE2 active-high, CE3 active-low) for flexible bank selection, supports synchronous self-timed writes qualified by WE and BWa/BWb, and includes CEN to suspend clock recognition without deselection-preserving internal state across extended cycles.

Key Specifications

Pinout & Package

This device is packaged in a JEDEC-standard Pb-free 100-pin TQFP (14 × 20 × 1.4 mm) with exposed thermal pad. Pin functions are fully synchronous except OE (asynchronous) and ZZ (sleep control).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V2115L10PF and ISSI IS61WV102418B, the CY7C1472BV33-200BZCT provides 2× higher bandwidth, deterministic burst access, and integrated JTAG-making it uniquely suited for real-time, high-throughput data-path buffering where latency predictability and testability are mandatory.

Availability

CY7C1472BV33-200BZCT is available at Aetrix Electronics and suitable for telecom infrastructure, network packet processing, and high-speed test equipment requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1472BV33-200BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C147x series belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-throughput data buffering in telecom and networking equipment where deterministic timing and burst efficiency are critical.

FAQ

What is the function of the MODE pin on CY7C1472BV33-200BZCT?

The MODE pin selects burst order: LOW configures linear burst addressing, HIGH selects interleaved burst addressing. This setting determines how the internal address counter increments during burst reads/writes and must be stable before initiating burst sequences. It is sampled synchronously on the rising edge of CLK when CEN is active.

Can CY7C1472BV33-200BZCT operate with 2.5 V I/O while maintaining 3.3 V core supply?

Yes-the device supports independent 3.3 V core (VDD) and 2.5 V or 3.3 V I/O (VDDQ) supplies. When VDDQ = 2.5 V, input thresholds and output drive levels comply with LVTTL/2.5 V standards, enabling direct interfacing with 2.5 V FPGAs or ASICs without level shifters.

How does the ZZ (Sleep Mode) pin interact with CEN and chip enables?

ZZ is asynchronous and forces deep sleep regardless of CEN or CE states-reducing ICC to <100 µA. Unlike CEN (which pauses clock recognition but retains state), ZZ disables internal clocks and memory array biasing. All control pins become don't-care upon ZZ assertion, and recovery requires ZZ deassertion followed by two valid CLK cycles before normal operation resumes.

Is the CY7C1472BV33-200BZCT pin-compatible with CY7C1470BV33-200BZI?

No-CY7C1472BV33-200BZCT (4M × 18, 100-pin TQFP) and CY7C1470BV33-200BZI (2M × 36, same package) share functional equivalence and NoBL™ architecture but differ in byte-write pin mapping (BWa–BWb vs. BWa–BWd) and address width usage. Their pinouts are not interchangeable due to distinct DQ/DQP groupings and internal memory organization.