Cypress Semiconductor Corp CY7C1474BV33-167BGC

Overview

CY7C1474BV33-167BGC from Cypress Semiconductor is a 72-Mbit (1M × 72) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It operates at 167 MHz with zero wait states, supports synchronous self-timed writes, and features 8-byte write select (BWa–BWh), 3.3 V core supply, and 3.3 V/2.5 V I/O compatibility.

For engineers reviewing the CY7C1474BV33-167BGC datasheet, CY7C1474BV33-167BGC pinout, CY7C1474BV33-167BGC application, or CY7C1474BV33-167BGC equivalent, key selection criteria include burst mode support (linear/interleaved), ZZ sleep mode capability, IEEE 1149.1 JTAG boundary scan compliance, and 209-ball FBGA package mechanical fit for high-density routing.

Technical Context

The device implements fully registered pipelined operation: all address, control, and data inputs pass through input registers on the rising edge of CLK; all outputs are clocked through output registers synchronized to CLK. Clock Enable (CEN) qualifies CLK without deselecting the device, enabling cycle extension during burst sequences.

It supports true back-to-back read/write transitions with no bus latency via on-chip NoBL™ logic, eliminating asynchronous OE timing constraints. Byte write control uses eight independent active-low signals (BWa–BWh), each enabling write to a dedicated 9-bit data group (DQx + DQPx), ensuring precise partial-word update capability without read-modify-write overhead.

Key Specifications

Pinout & Package

Package: 209-ball Fine-Pitch Ball Grid Array (FBGA), 14 mm × 22 mm × 1.76 mm body, RoHS-compliant Pb-free option available. Pitch: 0.8 mm. Ball composition: SnAgCu.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V2135L16PF and IS61WV102472BLL-167TQLI, CY7C1474BV33-167BGC uniquely combines 72-bit width, JTAG testability, and ZZ sleep-making it optimal for telecom infrastructure requiring field-testable, thermally constrained, single-chip wide-bus buffers.

Availability

CY7C1474BV33-167BGC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processor cache, and radar signal processing applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1474BV33-167BGC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC programmable systems-on-chip, and USB-C/USB-PD solutions.

CY7C1474BV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-frequency memory subsystems in networking, telecommunications, and defense electronics where deterministic timing and burst efficiency are critical.

FAQ

What is the function of the ADV/LD pin in burst operations?

The ADV/LD pin controls the internal address counter behavior: when HIGH and CEN is active, it advances the counter for sequential burst access; when LOW, it loads a new starting address from A0–A17. This dual-mode operation enables both streaming transfers and random-access bursts without external address generation logic.

Does CY7C1474BV33-167BGC support 2.5 V I/O operation with 3.3 V core?

Yes. The device has separate VDD (3.3 V core) and VDDQ (3.3 V or 2.5 V I/O) supplies. When VDDQ = 2.5 V, all I/O pins-including DQa–DQh, DQPa–DQPh, BWa–BWh, and OE-operate at 2.5 V LVTTL levels while maintaining full 167 MHz performance and timing compliance.

How does the ZZ sleep mode interact with data retention?

In ZZ mode, the device enters ultra-low-power state with ICC < 100 µA while retaining all stored data. Internal refresh circuitry remains active, and data is preserved across temperature ranges (–40°C to +85°C). Exit time from ZZ is one clock cycle after ZZ deassertion, with no initialization delay.

Is JTAG boundary scan functional when CEN is deasserted?

Yes. IEEE 1149.1 JTAG operation is independent of CEN and functions even when the SRAM core is clock-gated. TCK, TMS, TDI, and TDO remain fully controllable for interconnect testing and device identification regardless of CEN state or memory activity.