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Infineon Technologies CY7C1480V33-250BZI

Name: CY7C1480V33-250BZI
Brand: Infineon Technologies
SKU: CY7C1480V33-250BZI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CY7C1480V33-250BZI

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 165-LBGA

Datasheet:: CY7C1480V33-250BZI.pdf

Description:: IC SRAM 72MBIT PAR 165FBGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

CY7C1480V33 from Cypress Semiconductor is a 72-Mbit pipelined synchronous SRAM configured as 2M × 36, operating at up to 250 MHz with 3.3V core and 2.5V/3.3V I/O supply support. It features registered inputs/outputs, 3.0 ns clock-to-output delay, and user-selectable Intel Pentium®-compatible or linear burst sequences. Used in high-speed L2 cache subsystems for embedded processors requiring deterministic low-latency memory access.

For engineers reviewing the CY7C1480V33 datasheet, CY7C1480V33 pinout, CY7C1480V33 application, or CY7C1480V33 equivalent, key selection criteria include synchronous burst timing compliance, byte-write granularity (BWA–BWD + BWE), dual-voltage I/O flexibility, and JEDEC-standard 100-pin TQFP or 165-ball FBGA packaging for board-level signal integrity.

Technical Context

The device implements a two-bit synchronous wraparound burst counter controlled by ADV, ADSP, and ADSC signals, enabling interleaved or linear address progression per IEEE 1149.1 JTAG-compliant boundary scan. All synchronous inputs-including A[1:0], CE1/CE2/CE3, BWA–BWH, GW, BWE, OE, and CLK-are registered on the rising edge of CLK.

It supports self-timed synchronous writes with single-cycle chip deselect, asynchronous OE and ZZ control, and independent VDDQ/VSSQ I/O power domains for noise isolation. Byte write operation requires simultaneous assertion of BWE and one or more BWX pins, while GW overrides all byte selects to enable full-word writes.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	72 Mbit (2M × 36 organization)
Max Clock Frequency	250 MHz - enables 4 ns cycle time for sustained burst reads/writes
Access Time (tCO)	3.0 ns - guaranteed clock-to-output delay for timing-critical cache interfaces
Core Supply Voltage	3.3 V ± 0.3 V - standard core rail compatible with legacy 3.3V logic families
I/O Supply Range	2.5 V or 3.3 V - allows interoperability with mixed-voltage SoC buses
Burst Mode Control	MODE pin-selectable Intel Pentium® interleaved or linear sequence - matches processor-native burst protocols
Power Dissipation (Active)	500 mA max @ 250 MHz - defines thermal budget for dense cache modules

Pinout & Package

Available in JEDEC-standard lead-free 100-pin TQFP (14 × 14 mm) and 165-ball FBGA (15 × 17 mm, 1.4 mm height). Both packages support industrial temperature range (–40°C to +85°C) and RoHS compliance.

Pin/Terminal	Circuit Role	Design Meaning
A0, A1, A[2:20]	Synchronous Address Input	Sampled on CLK rising edge when ADSP/ADSC active; A1:A0 load burst counter
BWA–BWD, BWE	Synchronous Byte Write Control	Active-low byte mask; BWE must be LOW to enable any byte write
GW	Synchronous Global Write Enable	Overrides BWX pins to write all 36 bits simultaneously on rising CLK edge
ADSP / ADSC	Synchronous Address Strobe	Processor- or controller-initiated address capture; ADSP takes priority if both asserted
ADV	Synchronous Burst Advance	Drives internal 2-bit counter to auto-increment address during burst cycles
OE	Asynchronous Output Enable	Tri-states DQ/DQP outputs immediately when HIGH; masked only on first read after deselect
ZZ	Asynchronous Sleep Control	Places device in low-power sleep mode (data retention preserved); internal pull-down
VDDQ / VSSQ	I/O Power/Ground	Isolated 2.5V/3.3V domain decoupling critical for signal integrity on high-speed DQ buses

Key Features

Feature	Design Value
Pipelined Synchronous Interface	Input/output registers synchronized to CLK rising edge eliminate external latch requirements and simplify timing closure
Configurable Burst Sequencing	MODE pin selects Intel Pentium®-interleaved (0,2,4,6) or linear (0,1,2,3) addressing - matches host CPU protocol without glue logic
Flexible Byte Write Granularity	Eight independent byte-write controls (BWA–BWH) + BWE enable precise 8-bit, 16-bit, or 32-bit updates within 36-bit word
Dual-Voltage I/O Support	VDDQ programmable for 2.5V or 3.3V operation - permits direct interfacing to DDR, PCI-X, or legacy 3.3V bus controllers
JTAG Boundary Scan	IEEE 1149.1-compliant test access port enables in-system verification of high-density PCB interconnects

Applications

High-Speed L2 Cache

Network Packet Buffer

Use Scenario: Secondary cache for MIPS-based network processors handling 10 Gbps line-rate packet classification.

IC Role / Device Role / Timing Role: Pipelined SRAM providing deterministic 3.0 ns tCO read latency and burst-aligned data delivery to match processor pipeline depth.

Use Value: Eliminates wait states during cache line fills, sustaining >95% bus utilization under sustained 250 MHz burst traffic.

Use Scenario: Deep packet buffer in enterprise switch ASICs buffering fragmented IPv6 headers across multiple ingress ports.

IC Role / Device Role / Timing Role: Synchronous burst memory serving as shared buffer pool with byte-granular write capability for header stitching.

Use Value: Enables concurrent multi-port write access via BWA–BWD masking, reducing arbitration overhead by 40% vs. discrete latch-based buffers.

Industrial Motion Controller

Avionics Data Recorder

Use Scenario: Real-time trajectory interpolation buffer in CNC motion controllers requiring jitter-free position update streams.

IC Role / Device Role / Timing Role: Deterministic-access SRAM storing interpolated coordinate sets with synchronized clock-to-output timing.

Use Value: Guarantees sub-4 ns output stability across temperature, preventing step-motor microstepping errors in closed-loop servo loops.

Use Scenario: Non-volatile flight data recorder buffer capturing ARINC 429 bus telemetry at 100 kHz sample rate.

IC Role / Device Role / Timing Role: High-reliability synchronous SRAM with ZZ sleep mode preserving data during power brownouts.

Use Value: Maintains 72 Mbit of uncorrupted telemetry during 100 ms power interruption, meeting DO-160 Section 20 Category A requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61WV102436BLL-10BLI	10 ns tCO, 100 MHz max frequency, 3.3V-only I/O, no ZZ sleep mode	Lacks burst counter and ADV-controlled auto-increment; requires external address generation	Select when cost sensitivity outweighs timing performance and burst protocol matching
MT55LSD256H36TG-250:G	250 MHz, 3.0 ns tCO, but uses differential LVDS I/O and requires 1.5V VDDQ	LVDS interface mandates termination and level-shifting; incompatible with 2.5V/3.3V CMOS buses	Select only for new designs targeting ultra-low-noise, point-to-point high-speed links with matched-impedance routing

Compared with IS61WV102436BLL-10BLI and MT55LSD256H36TG-250:G, the CY7C1480V33 uniquely delivers Pentium®-protocol burst alignment, dual-voltage I/O, and integrated ZZ sleep-enabling drop-in replacement in legacy cache subsystems without redesigning address control logic or power delivery.

Availability

CY7C1480V33 is available at Aetrix Electronics and suitable for high-speed L2 cache, network packet buffering, industrial motion control, and avionics data recording requiring stable component supply across extended lifecycle programs.

Supply support for CY7C1480V33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications systems.

The CY7C1480V33 belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for deterministic, low-jitter cache and buffer applications in processor-centric architectures.

FAQ

What is the function of the MODE pin in CY7C1480V33?

The MODE pin selects between Intel Pentium®-interleaved burst order (0,2,4,6) and linear burst order (0,1,2,3) by sampling its logic level at power-up or reset. This determines how the internal two-bit counter increments addresses during burst reads/writes, ensuring protocol compatibility with host processors without external sequencing logic.

Can CY7C1480V33 operate with 2.5V I/O while using 3.3V core voltage?

Yes. The device supports independent VDDQ (2.5V or 3.3V) and VDD (3.3V) supplies. VDDQ powers only the I/O circuitry-including DQ/DQP drivers and receivers-allowing direct interface to 2.5V bus standards while maintaining full 3.3V core functionality and timing specifications.

How does the ZZ pin affect power consumption and data retention?

When ZZ is driven HIGH, the device enters non-time-critical sleep mode, reducing active current to ≤120 mA (typical standby) while preserving all stored data. The internal pull-down ensures safe default LOW state; floating ZZ is acceptable but not recommended for lowest power.

Is CY7C1480V33 pin-compatible with CY7C1482V33 or CY7C1486V33?

No. Although sharing identical pin functions and package footprints (100-pin TQFP/165-ball FBGA), the three variants differ in memory organization (2M×36, 4M×18, 1M×72) and pin assignments for data width-e.g., CY7C1482V33 uses fewer DQ pins and repurposes some BWX lines. Direct substitution requires layout and firmware revision.

CY7C1480V33-250BZI Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 165-LBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 72Mbit

Memory Organization:: 2M x 36

Memory Interface:: Parallel

Clock Frequency:: 250 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3 ns

Voltage - Supply:: 3.135V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-FBGA (15x17)

CY7C1480V33-250BZI FAQ

1.How can I place an order for CY7C1480V33-250BZI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1480V33-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1480V33-250BZI reliable?

The price and inventory of CY7C1480V33-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1480V33-250BZI is usually 5 days.

3.What payment methods are accepted for CY7C1480V33-250BZI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1480V33-250BZI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1480V33-250BZI?

CY7C1480V33-250BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1480V33-250BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1480V33-250BZI?

For technical support, including CY7C1480V33-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1480V33-250BZI requirements.

6.How does Aetrix verify that CY7C1480V33-250BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1480V33-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1480V33-250BZI meets industry standards.

7.What is the process for return or replacement of CY7C1480V33-250BZI?

All CY7C1480V33-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1480V33-250BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1480V33-250BZI part is unused and in its original packaging.

Return procedure for CY7C1480V33-250BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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