Cypress Semiconductor Corp CY7C1512AV18-200BZXC
- Part No.:
- CY7C1512AV18-200BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1512AV18-200BZXC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,517
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Product details
Overview
CY7C1512AV18-200BZXC from Cypress Semiconductor is a 4M × 18 (72-Mbit), 1.8V QDR® II SRAM with dual independent read/write ports, 200 MHz clock operation (500 MT/s DDR), 1.5-cycle read latency (DLL enabled), and HSTL I/O interface. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.
For engineers reviewing the CY7C1512AV18-200BZXC datasheet, CY7C1512AV18-200BZXC pinout, CY7C1512AV18-200BZXC application, or CY7C1512AV18-200BZXC equivalent, key selection criteria include burst depth (2-word), DLL-enabled timing mode, FBGA-165 package compatibility, and QDR II–specific echo clock (CQ/CQ) support for source-synchronous data capture.
Technical Context
This device implements a synchronous pipelined QDR II architecture with physically separate read and write data paths, eliminating bus turnaround overhead. It uses dual differential input clocks (K/K) for address/data capture and dual output clocks (C/C) with echo clocks (CQ/CQ) to deskew flight time across high-speed memory buses.
All synchronous inputs-including RPS, WPS, BWS[1:0], and A[20:0]-are registered on K/K rising edges; all outputs (Q[17:0]) are edge-aligned to C/C. The internal Delay Lock Loop (DLL) enables precise 1.5-cycle read latency at 200 MHz, while DOFF pin control allows fallback to QDR I mode (1-cycle latency, ≤167 MHz).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 4M × 18 (72 Mbit); two 2M × 18 arrays enable depth expansion via RPS/WPS |
| Max Clock Frequency | 200 MHz (K/K input); supports 500 MT/s effective bandwidth via DDR on both ports |
| Read Latency | 1.5 cycles with DLL enabled; reduces system-level pipeline stalls in burst-intensive traffic |
| I/O Voltage | VDDQ = 1.4 V to 1.8 V; compatible with HSTL Class I receivers and drivers |
| Package | 165-ball FBGA (15 mm × 17 mm × 1.4 mm); RoHS-compliant, Pb-free option available |
| Core Supply | VDD = 1.8 V ± 0.1 V; low-voltage core reduces dynamic power vs. 2.5V QDR I devices |
| Output Impedance Control | ZQ pin tunes Q[17:0]/CQ/CQ output impedance to match board trace Z₀ (via external RQ) |
Pinout & Package
165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm footprint, 1.4 mm height, 0.8 mm ball pitch. Compliant with JEDEC MO-245AC.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data input | Latched on K/K rising edges; supports byte-write via BWS[1:0] for partial-word updates |
| Q[17:0] | Synchronous read data output | Driven on C/C rising edges; tristated automatically after burst completion when RPS deasserted |
| RPS / WPS | Port-select control inputs | Active-low; enables independent arbitration of read/write ports without shared bus contention |
| K / K | Primary input clock pair | Edge-aligned capture of addresses, data, and controls; defines all synchronous timing references |
| C / C | Output data clock pair | Deskews Q[17:0] timing across multiple devices; used with CQ/CQ for controller-aligned capture |
| CQ / CQ | Free-running echo clocks | Synchronized to C/C; simplifies source-synchronous latch timing at memory controller inputs |
| ZQ | Output impedance calibration input | Connects to external resistor to ground to set 0.2×RQ output drive strength for signal integrity |
| DOFF | DLL disable control | Pull LOW to disable DLL and operate in QDR I mode (1-cycle latency, max 167 MHz) |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Enables true concurrent access-no bus turnaround delay or arbitration logic required in system design |
| 2-word burst architecture | Guarantees minimum 36-bit data transfer per access cycle; eliminates per-word address overhead |
| Integrated DLL with DOFF control | Provides deterministic 1.5-cycle latency at 200 MHz; pin-selectable fallback to QDR I timing for legacy compatibility |
| HSTL Class I I/O with ZQ calibration | Ensures impedance-matched signaling across wide temperature/voltage ranges without external termination resistors |
| JTAG 1149.1 test port | Supports boundary-scan testing and in-system programming without requiring additional debug interfaces |
Applications
| Network Packet Buffering | Switch Fabric Memory |
|---|---|
|
Use Scenario: Line-rate buffering of variable-length Ethernet frames in 10G/40G switch ASICs. IC Role / Device Role / Timing Role: Dedicated QDR II SRAM acting as ingress/egress FIFO with zero-turnaround dual-port access. Use Value: 500 MT/s bandwidth sustains full-duplex 40G line rate; echo clocks (CQ/CQ) align data capture at switch fabric controller with <±50 ps skew. |
Use Scenario: Shared memory pool for crossbar arbitration in multi-stage telecom switching fabrics. IC Role / Device Role / Timing Role: High-throughput memory node supporting simultaneous read (scheduler lookup) and write (cell injection) operations. Use Value: Independent RPS/WPS signals allow concurrent scheduler reads and cell writes without pipeline bubbles; 1.5-cycle latency minimizes scheduling jitter. |
| Baseband Processing Buffer | Test Equipment Pattern Memory |
|
Use Scenario: Real-time buffering of IQ samples between ADC/DAC and FPGA-based digital pre-distortion engines in 5G massive MIMO radios. IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory for cyclic buffer management in time-critical RF chains. Use Value: DLL-enabled timing ensures sub-nanosecond read-to-write phase alignment; ZQ calibration maintains signal fidelity across -40°C to +85°C operating range. |
Use Scenario: High-speed stimulus/response storage in automated test equipment (ATE) for SoC validation. IC Role / Device Role / Timing Role: Burst-mode pattern generator memory synchronized to tester clock domain via C/C and CQ/CQ. Use Value: 2-word burst + DDR I/O delivers 72-bit pattern words per 5 ns cycle; JTAG support enables in-system verification of memory contents during test sequence execution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C362000B-200BIN | 2M × 36 configuration (72 Mbit), same 200 MHz speed, but lacks echo clocks (CQ/CQ) and ZQ calibration | Requires external deskew circuitry and fixed-impedance termination; less suitable for multi-device parallel interfaces | Select when system uses single-device memory mapping and does not require source-synchronous echo clocking |
| IS61WV102418B-200BLI | 1M × 18 sync SRAM (18 Mbit), 200 MHz, no DDR, no dual-port-single-port with 2-cycle latency | Lower bandwidth (200 MB/s vs. 900 MB/s), no concurrent access; requires external arbitration logic | Select only for cost-sensitive, non-concurrent applications where QDR II features are unnecessary |
Compared with AS7C362000B-200BIN and IS61WV102418B-200BLI, CY7C1512AV18-200BZXC uniquely delivers true dual-port DDR bandwidth with integrated echo clocks and impedance tuning-critical for scalable, multi-device, source-synchronous memory subsystems in networking and test equipment.
Availability
CY7C1512AV18-200BZXC is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, baseband processing buffers, and ATE pattern memory requiring stable component supply across extended temperature and long-lifecycle programs.
Supply support for CY7C1512AV18-200BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems.
CY7C1512AV18 belongs to the QDR II SRAM product line, engineered specifically for deterministic, low-latency, concurrent memory access in high-speed packet-switched infrastructure.
FAQ
What is the function of the DOFF pin on CY7C1512AV18-200BZXC?
The DOFF pin disables the internal Delay Lock Loop (DLL) when pulled LOW. In DLL-off mode, the device operates as a QDR I SRAM with 1-cycle read latency and maximum frequency reduced to 167 MHz. For standard QDR II operation at 200 MHz with 1.5-cycle latency, DOFF must be tied HIGH via a ≤10 kΩ pull-up resistor to VDDQ.
How does the ZQ pin affect signal integrity in high-speed designs?
The ZQ pin calibrates the output driver impedance of Q[17:0], CQ, and CQ pins to match the system data bus characteristic impedance (Z₀). Connecting ZQ to ground through an external resistor RQ sets output impedance to 0.2 × RQ; connecting directly to VDDQ enables minimum-impedance mode. This eliminates need for external series termination and improves eye diagram margin at 500 MT/s.
Can CY7C1512AV18-200BZXC operate with only one clock pair instead of two?
Yes-CY7C1512AV18-200BZXC supports single-clock mode using only K/K to control both input and output registers. In this mode, C/C are unused, and Q[17:0] timing is referenced to K/K. However, echo clocks (CQ/CQ) remain active and synchronized to K/K, preserving source-synchronous capture capability at the controller.
What is the role of BWS[1:0] in byte-write operations?
BWS0 and BWS1 are active-LOW byte write select signals that determine which 9-bit sub-byte of D[17:0] is written during each half of the 2-word burst. BWS0 controls D[8:0], BWS1 controls D[17:9]. When a BWS signal is deasserted, the corresponding byte remains unaltered-enabling efficient read-modify-write sequences without full-word reads.
CY7C1512AV18-200BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1512AV18-200BZXC FAQ
1.How can I place an order for CY7C1512AV18-200BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1512AV18-200BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1512AV18-200BZXC reliable?
The price and inventory of CY7C1512AV18-200BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1512AV18-200BZXC is usually 5 days.
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Once your CY7C1512AV18-200BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1512AV18-200BZXC?
For technical support, including CY7C1512AV18-200BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1512AV18-200BZXC requirements.
6.How does Aetrix verify that CY7C1512AV18-200BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1512AV18-200BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1512AV18-200BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1512AV18-200BZXC?
All CY7C1512AV18-200BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1512AV18-200BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1512AV18-200BZXC part is unused and in its original packaging.
Return procedure for CY7C1512AV18-200BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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