Cypress Semiconductor Corp CY7C1512KV18-333BZC

Overview

CY7C1512KV18-333BZC from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 333 MHz QDR® II SRAM with separate read/write ports, DDR interfaces on both ports (700 MT/s effective data rate), 1.8V core supply, and 1.4–1.8V I/O supply. It delivers concurrent read/write transactions with 1.5-cycle read latency (DOFF = HIGH) and is used in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C1512KV18-333BZC datasheet, CY7C1512KV18-333BZC pinout, CY7C1512KV18-333BZC application, or CY7C1512KV18-333BZC equivalent, key selection criteria include burst depth (2-word), echo clock support (CQ/CQ), PLL-based timing accuracy, and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

This QDR II SRAM implements fully independent synchronous read and write ports sharing a multiplexed address bus, with addresses latched on alternate rising edges of the K clock. Its architecture eliminates bus turnaround by dedicating D[x:0] inputs to writes and Q[x:0] outputs to reads.

The device uses two input clocks (K/K) for address/data capture and two output clocks (C/C) plus echo clocks (CQ/CQ) to manage flight time skew. A built-in PLL ensures precise data placement relative to output clocks, enabling reliable 700 MT/s operation at 333 MHz.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C1512KV18-333BZC uniquely delivers 700 MT/s DDR throughput with echo-clock–assisted timing closure-critical for FPGA-based 10G+ systems where deterministic latency and skew control outweigh cost or voltage flexibility.

Availability

CY7C1512KV18-333BZC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processing cache requiring stable component supply across extended production lifecycles.

Supply support for CY7C1512KV18-333BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

CY7C1512KV18 belongs to the QDR II SRAM product line, engineered specifically for deterministic, high-bandwidth data buffering in packet-switched infrastructure where concurrent read/write and sub-ns timing control are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1512KV18-333BZC?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle read latency for optimal timing margin in high-speed systems; when LOW, it enables 1-cycle latency for minimal access delay. This setting directly controls internal pipeline staging and must be held stable during operation.

Does CY7C1512KV18-333BZC require external termination resistors?

No-CY7C1512KV18-333BZC integrates programmable HSTL output drivers calibrated via the ZQ pin. External 50 Ω termination is only needed on the CQ/CQ echo clock lines if driving long traces; all data and address lines use on-die impedance matching referenced to VREF.

Can CY7C1512KV18-333BZC operate with only one clock domain (K = C)?

Yes-the device supports single-clock-domain operation where K and C are tied together. In this mode, read data is registered on the same clock edge as address latching, reducing timing complexity but limiting maximum frequency to ~250 MHz due to internal path delays.

How is depth expansion implemented using WPS and BWS pins?

Depth expansion uses WPS to enable write operations on specific devices in a stack, while BWS[1:0] selects which 9-bit byte lanes (D[8:0] or D[17:9]) are written per device. This allows cascading multiple CY7C1512KV18-333BZC units to build wider memory banks without external glue logic.