Infineon Technologies CY7C1513V18-250BZC

Overview

CY7C1513V18 from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 1.8V QDR-II SRAM with separate read/write ports, 250 MHz clock operation (600 Mbps DDR data rate), HSTL I/O, and 165-ball FBGA package. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.

For engineers reviewing the CY7C1513V18 datasheet, CY7C1513V18 pinout, CY7C1513V18 application, or CY7C1513V18 equivalent, key selection criteria include burst depth (4-word), dual-clock timing (K/K and C/C), echo clocks (CQ/CQ), DLL-based data alignment, and x18 data width for 16-bit+ bus systems.

Technical Context

The CY7C1513V18 implements QDR-II architecture with fully independent synchronous read and write ports sharing one multiplexed address bus. Address latching occurs on alternating rising edges of K and K clocks, enabling pipelined 4-word bursts per access.

It uses two input clock pairs-K/K for address/control/data capture and C/C for output timing-with integrated Delay Lock Loop (DLL) to align CQ/CQ echo clocks to output data edges. All outputs are HSTL Class I compliant with programmable drive strength via ZQ impedance calibration.

Key Specifications

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA) package, 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant. Thermal pad exposed on underside for enhanced heat dissipation in high-throughput applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth burst SRAM applications.

Compared with CY7C1513V18-200BZC, the -250BZC delivers 25% higher bandwidth at modest power increase; versus AS7C3256A-25JC, it provides true concurrent access, deterministic latency, and scalable timing-but requires DDR-aware controller design.

Availability

CY7C1513V18-250BZC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and high-speed test equipment requiring stable component supply across extended production lifecycles.

Supply support for CY7C1513V18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

The QDR-II SRAM product line targets high-speed packet-processing systems requiring deterministic, low-latency, concurrent memory access-optimized for telecom infrastructure and test equipment.

FAQ

What is the minimum VDDQ voltage supported by CY7C1513V18-250BZC?

The device supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V is not guaranteed per datasheet specifications; HSTL Class I compliance and timing margins require ≥1.4 V for stable 250 MHz DDR operation. Lower voltages may cause setup/hold violations on Q[17:0] outputs.

Can CY7C1513V18-250BZC operate in single-clock mode?

Yes-it supports single-clock mode where K/K serve as both input and output clocks. In this mode, C/C are unused, and Q[17:0] data is driven on K/K rising edges. Echo clocks CQ/CQ derive from K/K instead of C/C, preserving DLL alignment for simplified controller design.

How does ZQ pin calibration affect signal integrity?

ZQ connects to an external resistor (typically 50 Ω to ground) to calibrate output driver impedance. This ensures Q[17:0] and CQ/CQ outputs match 50 Ω transmission lines, minimizing reflections and maintaining <5% overshoot/undershoot at 600 Mbps-critical for eye diagram compliance in high-speed layouts.

Is JTAG boundary-scan supported in all operating modes?

Yes-JTAG 1149.1 functionality remains active regardless of DLL state (DOFF high/low), clock frequency (167–300 MHz), or port select configuration. TDI/TDO/TCK/TMS pins operate independently of memory access timing, enabling in-system test even during active data transfers.