Cypress Semiconductor Corp CY7C1525KV18-250BZXI
- Part No.:
- CY7C1525KV18-250BZXI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1525KV18-250BZXI.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1525KV18-250BZXI from Cypress Semiconductor is an 8M × 9 (72-Mbit), 1.8V QDR® II SRAM with dual DDR read/write ports, 250 MHz clock operation (500 MT/s per port), 1.5-cycle read latency (DOFF = HIGH), and 165-ball FBGA (13 × 15 × 1.4 mm) packaging. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.
For engineers reviewing the CY7C1525KV18-250BZXI datasheet, CY7C1525KV18-250BZXI pinout, CY7C1525KV18-250BZXI application, or CY7C1525KV18-250BZXI equivalent, key selection criteria include burst depth (2-word), I/O voltage compatibility (VDDQ = 1.4–1.8 V), echo clock support (CQ/CQ), JTAG 1149.1 testability, and synchronous self-timed write timing.
Technical Context
The device implements a true dual-port architecture with physically separate read data outputs (Q[8:0]) and write data inputs (D[8:0]), eliminating bus turnaround overhead. Its PLL synchronizes K/K and C/C clocks to achieve precise 700 Mbps DDR data transfer on both ports at 250 MHz.
Address latching uses a single multiplexed A[22:0] bus sampled on alternating rising edges of K/K; port select signals (WPS, RPS) enable independent depth expansion. DOFF pin configures read latency between 1-cycle (LOW) and 1.5-cycle (HIGH) modes, directly affecting pipeline depth in switch fabric controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (8M × 9 organization) |
| Max Clock Frequency | 250 MHz - supports 500 MT/s DDR throughput per port |
| Read Latency | 1.5 cycles (DOFF = HIGH) - enables tighter timing closure in pipelined ASIC interfaces |
| VDD / VDDQ | Core: 1.8 V ±0.1 V; I/O: 1.4–1.8 V - allows interoperability with 1.5 V or 1.8 V logic domains |
| Burst Length | 2-word fixed burst - reduces address bus toggling and simplifies controller address generation |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - compatible with standard 0.8 mm pitch PCB assembly |
| JTAG Support | IEEE 1149.1 compliant - enables boundary scan testing without external test fixtures |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant (Pb-free).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[8:0] | Write Data Inputs | Synchronous 9-bit data sampled on rising edge of K/K; supports byte-write via BWS0 |
| Q[8:0] | Read Data Outputs | DDR output register driven by C/C clocks; echo clock CQ aligns capture timing |
| WPS | Write Port Select | Active-low signal enabling write transactions; deassertion blocks D[8:0] latching |
| RPS | Read Port Select | Active-low signal enabling read transactions; deassertion forces Q[8:0] to high-Z |
| K / K | Input Clocks | Dual-phase clocks for DDR timing; only rising edges used for all synchronous inputs |
| C / C | Output Clocks | Separate clocks for read data output registers to minimize skew vs. Q[8:0] flight time |
| CQ / CQ | Echo Clocks | Source-synchronous clocks output with Q[8:0] to simplify latch timing in FPGA receivers |
| DOFF | Read Latency Control | High = 1.5-cycle latency; Low = 1-cycle latency - selects internal pipeline depth |
| BWS0 | Byte Write Select | Active-low control for D[8:0]; when deasserted, corresponding byte remains unaltered |
| VDDQ | I/O Power Supply | 1.4–1.8 V supply for HSTL-compatible output drivers; decoupling required per ball group |
Key Features
| Feature | Design Value |
|---|---|
| Independent Read/Write Ports | Eliminates bus turnaround delay - enables full-duplex 1 Gbps aggregate bandwidth (500 Mbps each direction) |
| 2-Word Burst Architecture | Reduces address bus activity by 50% per transaction - lowers controller logic complexity and power |
| Programmable Read Latency (DOFF) | Allows runtime optimization: 1-cycle mode for minimal latency in latency-critical buffers; 1.5-cycle for setup margin in high-speed designs |
| Variable Drive HSTL Outputs | Configurable drive strength matches trace impedance - minimizes signal integrity issues at 700 Mbps DDR rates |
| PLL-Based Clock Alignment | Ensures <±50 ps skew between K/K and C/C domains - critical for reliable DDR data capture at 250 MHz |
Applications
| Telecom Line Card Buffering | Network Switch Fabric Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in OC-192/STM-64 line interface modules. IC Role / Device Role / Timing Role: Dual-port SRAM serving as shared buffer between SerDes PHY and traffic manager ASIC, synchronized via K/K and C/C clocks. Use Value: Concurrent read/write eliminates arbitration stalls, enabling deterministic 10 Gbps line-rate packet processing without head-of-line blocking. | Use Scenario: Holding forwarding table entries and queue state in multi-stage Clos fabric switches. IC Role / Device Role / Timing Role: High-speed lookup memory interfaced to parallel search engines, using echo clocks (CQ) for timing-critical result capture. Use Value: 2-word burst and 1.5-cycle latency reduce controller cycle count per lookup, increasing fabric throughput by up to 22% vs. single-port SRAM. |
| Baseband Processing in 4G LTE eNodeB | High-Frequency Trading Engine Cache |
Use Scenario: Temporary storage of FFT/IFFT intermediate results during OFDMA symbol processing. IC Role / Device Role / Timing Role: Low-latency memory co-located with DSP cores, leveraging DOFF=LOW for 1-cycle reads to minimize pipeline bubbles. Use Value: Synchronous self-timed writes guarantee atomic updates without external handshake, preventing partial-result corruption during rapid burst transfers. | Use Scenario: Staging order book snapshots and market depth updates in ultra-low-latency matching engines. IC Role / Device Role / Timing Role: Deterministic-access memory mapped to FPGA logic, using JTAG boundary scan for in-system verification of signal integrity. Use Value: 165-ball FBGA footprint enables dense placement near FPGA banks, reducing interconnect delay to <120 ps - critical for sub-microsecond decision loops. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C36256P-250BIN | 256-Mbit (16M × 16), 250 MHz, x16 interface, no echo clocks or DOFF latency control | Lacks QDR II features: single-port, no concurrent read/write, no CQ timing aid | Select only if bandwidth demand exceeds 72 Mbit and system can tolerate bus turnaround overhead |
| IS61WV102418BLL-250BLI | 18-Mbit (512K × 36), 250 MHz, x36 interface, asynchronous reset, no JTAG | Lower density, no DDR interface, no burst capability - requires wider bus and more complex controller | Choose only for cost-sensitive, lower-throughput applications where QDR II features are unnecessary |
Compared with AS7C36256P-250BIN and IS61WV102418BLL-250BLI, CY7C1525KV18-250BZXI uniquely delivers true concurrent access, echo-clock–assisted timing closure, and programmable latency - essential for deterministic 10 Gbps+ data path design.
Availability
CY7C1525KV18-250BZXI is available at Aetrix Electronics and suitable for telecom infrastructure, network switching, 4G baseband processing, and low-latency trading systems requiring stable component supply across extended production lifecycles.
Supply support for CY7C1525KV18-250BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.
The QDR® II SRAM product line targets high-speed packet processing systems requiring deterministic latency, concurrent access, and DDR bandwidth - optimized for ASIC/FPGA-based networking hardware.
FAQ
What is the function of the DOFF pin on CY7C1525KV18-250BZXI?
The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin in high-speed layouts; when LOW, it selects 1-cycle latency for minimal delay in latency-critical paths. This setting is sampled at power-up and remains static during operation unless reconfigured via reset sequence.
Can CY7C1525KV18-250BZXI operate with only one clock domain (K-only)?
Yes - the device supports single-clock mode using only the K input clock for both read and write operations, with C derived internally. However, this disables echo clock (CQ) functionality and reduces timing margin; dual-clock mode (K/K and C/C) is required to achieve guaranteed 250 MHz DDR performance and full QDR II feature compliance.
How does the BWS0 signal control write operations in CY7C1525KV18-250BZXI?
BWS0 (Byte Write Select 0) is an active-low signal that gates the entire 9-bit D[8:0] bus during write cycles. When asserted, D[8:0] is written to memory; when deasserted, the corresponding 9-bit word remains unchanged. Unlike nibble-select in x8 variants, BWS0 in x9 configuration operates at full-word granularity due to the 9-bit data width.
Is the 165-ball FBGA package of CY7C1525KV18-250BZXI compatible with standard reflow profiles?
Yes - the Pb-free 165-ball FBGA package is qualified for IPC/JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260°C for 30 seconds. Thermal pad layout must follow Cypress's recommended 4 × 4 array of thermal vias under the center die pad, and solder mask defined pads are required to prevent bridging on 0.8 mm pitch balls.
CY7C1525KV18-250BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 72Mbit
- Memory Organization:
- 8M x 9
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1525KV18-250BZXI FAQ
1.How can I place an order for CY7C1525KV18-250BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1525KV18-250BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1525KV18-250BZXI reliable?
The price and inventory of CY7C1525KV18-250BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1525KV18-250BZXI is usually 5 days.
3.What payment methods are accepted for CY7C1525KV18-250BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1525KV18-250BZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1525KV18-250BZXI?
CY7C1525KV18-250BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1525KV18-250BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1525KV18-250BZXI?
For technical support, including CY7C1525KV18-250BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1525KV18-250BZXI requirements.
6.How does Aetrix verify that CY7C1525KV18-250BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1525KV18-250BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1525KV18-250BZXI meets industry standards.
7.What is the process for return or replacement of CY7C1525KV18-250BZXI?
All CY7C1525KV18-250BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1525KV18-250BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1525KV18-250BZXI part is unused and in its original packaging.
Return procedure for CY7C1525KV18-250BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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