Cypress Semiconductor Corp CY7C1911KV18-300BZC
- Part No.:
- CY7C1911KV18-300BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1911KV18-300BZC.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1911KV18-300BZC from Cypress Semiconductor is a 2-Mbit × 9 (18-Mbit total) QDR® II SRAM with separate read/write ports, 300 MHz clock operation, 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers 600 MB/s bandwidth via DDR interfaces on both ports and supports 1.5-cycle read latency (DOFF = HIGH) in high-speed networking buffers and packet memory applications.
For engineers reviewing the CY7C1911KV18-300BZC datasheet, CY7C1911KV18-300BZC pinout, CY7C1911KV18-300BZC application, or CY7C1911KV18-300BZC equivalent, key selection criteria include burst depth (four-word), echo clock (CQ/CQ) timing margining, HSTL-compatible output drive, JTAG 1149.1 testability, and FBGA-165 package compatibility with high-density routing.
Technical Context
This QDR II SRAM implements fully independent synchronous read and write pipelines with dual-clock domains: K/K for address/data capture and C/C for output data staging. Its four-word burst architecture reduces effective address bus toggling by 75% versus single-word access, while internal self-timed writes eliminate external write-strobe coordination.
The device uses a 2M × 9 organization (19-bit address bus), supports byte-level write masking via BWS0, and integrates a PLL for precise data-eye alignment. Echo clocks (CQ/CQ) are phase-matched to output data edges, enabling reliable capture at 600 MB/s without complex board-level delay tuning.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (2 M × 9 configuration) |
| Max Clock Frequency | 300 MHz - enables 600 MB/s sustained throughput with DDR interface |
| Read Latency | 1.5 cycles (DOFF = HIGH) - balances speed and setup margin for FPGA interfacing |
| Core Supply (VDD) | 1.8 V ±0.1 V - matches modern low-voltage logic families and reduces dynamic power |
| I/O Supply (VDDQ) | 1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V system I/O rails |
| Burst Length | Four-word - minimizes address bus activity and simplifies controller address sequencing |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - provides fine-pitch, thermally efficient layout for high-speed PCBs |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, 1.0 mm ball pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[8:0] | Synchronous write data inputs | 9-bit parallel data sampled on rising edge of K clock; latched internally for burst write |
| Q[8:0] | Synchronous read data outputs | 9-bit parallel data driven on rising edge of C clock; aligned with echo clock CQ |
| WPS | Write port select | Active-low signal enabling write operations; deassertion blocks all write data acceptance |
| BWS0 | Byte write select | Active-low mask controlling entire 9-bit word write; no nibble-level control in ×9 mode |
| A[18:0] | Multiplexed address inputs | 19-bit address bus shared by read/write ports; latched on alternating K clock edges |
| K / K | Input clocks (read/write) | Differential pair driving input registers; only rising edges used for synchronization |
| C / C | Output clocks | Differential pair controlling output register timing; minimizes skew between Q and CQ |
| CQ / CQ | Echo clocks | Phase-aligned copies of C/C outputs; simplify high-speed data capture in FPGA receivers |
| DOFF | Read latency control | High = 1.5-cycle latency; Low = 1-cycle latency - selects trade-off between speed and timing margin |
| VREF | Reference voltage input | Provides mid-supply reference for HSTL input threshold; must be externally decoupled |
| ZQ | Impedance calibration | Connects to 240 Ω resistor to ground for on-die output driver impedance tuning |
| TCK/TMS/TDI/TDO | JTAG boundary scan interface | IEEE 1149.1 compliant test access port; supports production testing and debug visibility |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Eliminates bus turnaround delays - enables true concurrent read+write at full bandwidth |
| Four-word burst architecture | Reduces required address transitions by 75%, lowering controller logic complexity and EMI |
| Echo clock (CQ/CQ) support | Enables source-synchronous data capture without PCB trace length matching constraints |
| Programmable output drive impedance | ZQ calibration ensures consistent HSTL output termination across voltage/temperature variation |
| 1.5-cycle configurable read latency | DOFF pin allows runtime selection between maximum speed (1 cycle) and robust timing margin (1.5 cycles) |
Applications
| Network Packet Buffer | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2/L3 switches with strict latency budgets. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer between ingress and egress traffic managers. Use Value: Four-word burst + DDR interface delivers 600 MB/s throughput while DOFF-controlled latency ensures deterministic frame queuing. |
Use Scenario: Holding ATM cell headers and payload fragments in OC-192/STM-64 line interface units. IC Role / Device Role / Timing Role: Dual-port memory serving as ping-pong buffer between framer and DSP subsystems. Use Value: Independent read/write ports allow simultaneous header lookup (read) and payload assembly (write) without arbitration stalls. |
| Baseband Processing Cache | FPGA Co-Processor Memory |
|
Use Scenario: Temporary storage of channel estimation coefficients and FFT outputs in LTE eNodeB baseband processing chains. IC Role / Device Role / Timing Role: Low-latency scratchpad memory tightly coupled to multi-core DSP clusters. Use Value: 1.5 V–1.8 V I/O flexibility enables direct connection to 1.5 V FPGA I/O banks; echo clocks simplify timing closure. |
Use Scenario: Off-chip memory extension for Xilinx Ultrascale+ or Intel Stratix 10 FPGA-based acceleration engines. IC Role / Device Role / Timing Role: High-throughput streaming memory mapped into AXI4-Stream or Avalon-ST fabric. Use Value: JTAG 1149.1 support enables in-system verification; FBGA-165 footprint aligns with FPGA reference layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10PF | 10 ns access time, ×18 config, 1.5 V core, no echo clocks, non-JTAG | Lacks CQ/CQ timing aid and boundary scan; requires tighter PCB layout for 666 MHz DDR | Prefer when legacy design reuse or cost sensitivity outweighs echo clock advantage |
| ISSI IS61WV102418BLL-10BLI | 10 ns async SRAM, ×18, 3.3 V/2.5 V/1.8 V, no DDR, no burst, no JTAG | Asynchronous interface limits max throughput to ~100 MB/s; no pipelined read/write concurrency | Only suitable for lower-bandwidth buffering where QDR II features are unnecessary |
Compared with IDT72T3615L10PF and IS61WV102418BLL-10BLI, CY7C1911KV18-300BZC uniquely combines echo-clock timing margining, JTAG testability, and true concurrent read/write-critical for 10G+ packet processing systems requiring deterministic latency and production test coverage.
Availability
CY7C1911KV18-300BZC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and FPGA co-processor memory applications requiring stable component supply and long-term industrial availability.
Supply support for CY7C1911KV18-300BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems.
CY7C1911KV18 belongs to the QDR® II SRAM product line, engineered specifically for high-throughput, low-latency packet memory in networking infrastructure and baseband processing equipment.
FAQ
What is the function of the DOFF pin on CY7C1911KV18-300BZC?
The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for improved timing margin in high-speed FPGA interfaces; when LOW, it reverts to 1-cycle latency for maximum throughput. This is a static configuration pin set at power-up and not dynamically switchable during operation.
Can CY7C1911KV18-300BZC operate with a 1.5 V VDDQ supply?
Yes - the device supports VDDQ from 1.4 V to 1.8 V, including 1.5 V. This allows direct interfacing with 1.5 V FPGA I/O banks without level shifters. Core VDD remains fixed at 1.8 V ±0.1 V and must be supplied independently.
How does the echo clock (CQ) improve system timing margin?
CQ is a phase-aligned copy of the C clock output, routed alongside Q[8:0] data signals. At 600 MB/s, this eliminates the need for precise PCB trace length matching between clock and data, because the receiver uses CQ to sample Q - effectively making the data path self-timed relative to its own clock edge.
Is JTAG boundary scan supported on CY7C1911KV18-300BZC?
Yes - the device implements IEEE 1149.1 JTAG with TCK, TMS, TDI, and TDO pins. It supports instruction register loading, boundary scan register access, and IDCODE readback. JTAG can be disabled via fuse or strap if unused, but the hardware interface remains present.
CY7C1911KV18-300BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 2M x 9
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1911KV18-300BZC FAQ
1.How can I place an order for CY7C1911KV18-300BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1911KV18-300BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1911KV18-300BZC reliable?
The price and inventory of CY7C1911KV18-300BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1911KV18-300BZC is usually 5 days.
3.What payment methods are accepted for CY7C1911KV18-300BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1911KV18-300BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1911KV18-300BZC?
CY7C1911KV18-300BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1911KV18-300BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1911KV18-300BZC?
For technical support, including CY7C1911KV18-300BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1911KV18-300BZC requirements.
6.How does Aetrix verify that CY7C1911KV18-300BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1911KV18-300BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1911KV18-300BZC meets industry standards.
7.What is the process for return or replacement of CY7C1911KV18-300BZC?
All CY7C1911KV18-300BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1911KV18-300BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1911KV18-300BZC part is unused and in its original packaging.
Return procedure for CY7C1911KV18-300BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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