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Infineon Technologies D1031SH45TXPSA1

Part No.:
D1031SH45TXPSA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
DO-200AD
Datasheet:
AetrixD1031SH45TXPSA1.pdf
Description:
DIODE GEN PURP 4.5KV 1450A
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,126

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Product details

Overview

D1031SH45TXPSA1 from Infineon Technologies is a press-pack, stud-mounted, fast-recovery diode designed for high-power medium-voltage converter freewheeling and snubber applications. It delivers 4500 V repetitive peak reverse voltage (VRRM), 1120 A average forward current at 85 °C (IFAVM), and 23 kA non-repetitive surge current (IFSM), with soft turn-off behavior at high di/dt for IGCT and IGBT-based traction and industrial drives.

For engineers reviewing the D1031SH45TXPSA1 datasheet, D1031SH45TXPSA1 pinout, D1031SH45TXPSA1 application, or D1031SH45TXPSA1 equivalent, key selection criteria include clamping force range (27–45 kN), two-sided thermal resistance (10 K/kW), junction temperature limit (140 °C), and recovered charge (≤3.5 mAs) under defined clamp circuit conditions.

Technical Context

This diode employs a silicon pressure-contact pellet structure optimized for high-current, high-voltage DC blocking and controlled reverse recovery. Its soft recovery (FRRS typ. 1.6) and low slope resistance (rT max. 0.968 mΩ) minimize voltage overshoot and switching losses in hard-switched converters.

Designed for forced-cooled, two-sided heat sinking, it supports dual-anode/cathode thermal paths with RthJC max. 10.0 K/kW (two-sided, DC) and transient thermal impedance ZthJC characterized across seven RC network elements for accurate thermal modeling.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM4500 V - Maximum repetitive reverse voltage before breakdown; enables use in 3.3 kV-class medium-voltage converters.
IFAVM1120 A @ TC = 85 °C - Continuous DC forward current rating with two-sided cooling; defines steady-state power handling capability.
IFSM23000 A @ tP = 10 ms - Non-repetitive surge current withstand; critical for short-circuit protection in drive inverters.
rT0.968 mΩ max. - Slope resistance at max junction temperature; determines conduction loss linearity and thermal derating behavior.
Qr3.5 mAs max. - Recovered charge under specified clamp circuit (LS ≤ 0.25 µH, RCL = 68 Ω, CCL = 3 µF); directly impacts turn-off energy and snubber sizing.
FRRS1.6 typ. - Reverse recovery softness factor; quantifies rate-of-change of reverse current decay, enabling predictable EMI and voltage spike control.
RthJC10.0 K/kW max. - Junction-to-case thermal resistance with two-sided DC cooling; sets minimum heatsink interface requirement for thermal design.

Pinout & Package

Press-pack, double-side cooled, stud-mounted package with isolated anode and cathode terminals. Diameter: 100 mm; contact diameter: 62.8 mm; height: 26 mm; clamping force: 27–45 kN.

Pin/TerminalCircuit RoleDesign Meaning
Anode (Stud)Forward current entry pointMechanically robust, thermally conductive mounting surface; requires torque-controlled clamping to heatsink.
Cathode (Stud)Forward current exit pointElectrically and thermally isolated terminal; enables symmetrical two-sided cooling and bidirectional mounting.

Key Features

FeatureDesign Value
Soft turn-off behaviorReverse recovery softness factor FRRS = 1.6 typ., limiting di/dt-induced voltage overshoot in high-di/dt IGBT/IGCT circuits.
High DC blocking stabilityVR(D) estimate = 2800 V with failure rate λ < 100 FIT; ensures long-term reliability in continuous DC-link applications.
Two-sided thermal pathRthJC = 10.0 K/kW (max.) with dual-stud cooling; enables balanced thermal dissipation and higher power density vs. single-sided packages.
High case non-rupture currentWithstands 23 kA surge without mechanical failure; eliminates risk of housing rupture during fault clearing in medium-voltage systems.

Applications

Medium-Voltage ConvertersIGCT Freewheeling Diodes

Use Scenario: Grid-connected HVDC converters and industrial motor drives operating at 2.5–4.16 kV DC-link voltages.

IC Role / Device Role / Timing Role: Main freewheeling path during IGBT/IGCT commutation; handles high di/dt and recovers with minimal voltage overshoot.

Use Value: Enables stable operation at 4500 V VRRM and 23 kA IFSM, reducing need for series-connected devices and simplifying snubber design.

Use Scenario: Gate-commutated thyristor (IGCT) based traction inverters in rail propulsion systems.

IC Role / Device Role / Timing Role: Clamped freewheeling diode in asymmetric half-bridge topologies; absorbs turn-off energy during IGCT forced commutation.

Use Value: Soft recovery (FRRS = 1.6) and low Qr (≤3.5 mAs) reduce stress on IGCT snubber components and improve system efficiency.

IGBT Freewheeling DiodesPulsed Power Systems

Use Scenario: High-power UPS, welding inverters, and induction heating systems using 3.3 kV IGBT modules.

IC Role / Device Role / Timing Role: Parallel freewheeling diode supporting high-current, high-frequency switching with low conduction loss.

Use Value: 0.968 mΩ rT and 1120 A IFAVM allow direct integration into high-current bus structures without excessive thermal derating.

Use Scenario: Capacitor discharge circuits in pulsed lasers, electromagnetic launchers, and particle accelerators.

IC Role / Device Role / Timing Role: High-energy, high-di/dt freewheeling path during rapid capacitor discharge cycles.

Use Value: 23 kA IFSM and 140 °C Tvj max ensure reliable operation under extreme transient overcurrents without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current freewheeling diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DD900S45K2VRRM = 4500 V, IFAVM = 900 A @ 85 °C, RthJC = 12.5 K/kW (two-sided)Lower current rating and higher thermal resistance; suited for lower-power 3.3 kV convertersSelect when system peak current remains below 900 A and thermal margin allows higher RthJC.
SKKH 105/45VRRM = 4500 V, IFAVM = 1050 A @ 85 °C, rT = 1.05 mΩ, Qr = 4.2 mAsSlightly higher conduction loss and recovered charge; uses different pressure-contact geometryPrefer when existing heatsink interface matches Semikron's stud pattern and legacy qualification is required.

Compared with DD900S45K2 and SKKH 105/45, D1031SH45TXPSA1 offers superior current capacity (1120 A), lowest slope resistance (0.968 mΩ), and tightest Qr specification (≤3.5 mAs), making it optimal for next-generation high-efficiency, high-density medium-voltage drives.

Availability

D1031SH45TXPSA1 is available at Aetrix Electronics and suitable for medium-voltage converters, IGCT-based traction systems, and pulsed power applications requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for D1031SH45TXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy infrastructure markets.

D1031SH45TXPSA1 belongs to Infineon's "Fast Hard Drive Diode" product line, engineered specifically for high-reliability, high-di/dt freewheeling in medium-voltage power conversion systems where soft recovery and mechanical robustness are critical.

FAQ

What is the maximum clamping force required for D1031SH45TXPSA1 installation?

The device requires a controlled clamping force between 27 kN and 45 kN to ensure proper thermal contact and electrical integrity across the silicon pellet interface. Exceeding 45 kN risks mechanical damage to the internal pressure-contact structure, while forces below 27 kN increase RthJC and may cause localized overheating under full-load conditions.

Can D1031SH45TXPSA1 be used with single-sided cooling?

Yes, but with significant derating: RthJC rises to 23.6 K/kW (cathode-sided) or 17.4 K/kW (anode-sided), reducing maximum allowable IFAVM by ~35–45% compared to two-sided cooling. Thermal simulation using the provided ZthJC analytical model is mandatory for single-sided configurations.

What clamp circuit parameters were used to specify Qr and IRM?

Recovered charge (Qr) and peak reverse recovery current (IRM) are measured with LS ≤ 0.25 µH, RCL = 68 Ω, CCL = 3 µF, and DCL = 34DSH65, at Tvj = 140 °C and -di/dt = 1000 A/µs. These values are not valid for arbitrary snubber designs and must be validated against actual system layout parasitics.

Is D1031SH45TXPSA1 RoHS-compliant and halogen-free?

Yes - D1031SH45TXPSA1 conforms to RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The device carries the "HF" marking in its full type designation and meets Infineon's standard material declaration requirements for industrial power modules.

D1031SH45TXPSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
DO-200AD
Packaging:
Tray
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
4500 V
Current - Average Rectified (Io):
1450A
Voltage - Forward (Vf) (Max) @ If:
4.2 V @ 2500 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
100 mA @ 4500 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
-
Operating Temperature - Junction:
0°C ~ 140°C

D1031SH45TXPSA1 FAQ

1.How can I place an order for D1031SH45TXPSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for D1031SH45TXPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for D1031SH45TXPSA1 reliable?

The price and inventory of D1031SH45TXPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for D1031SH45TXPSA1 is usually 5 days.

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D1031SH45TXPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your D1031SH45TXPSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for D1031SH45TXPSA1?

For technical support, including D1031SH45TXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your D1031SH45TXPSA1 requirements.

6.How does Aetrix verify that D1031SH45TXPSA1 is sourced from the original manufacturer or authorized distributors?

All D1031SH45TXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that D1031SH45TXPSA1 meets industry standards.

7.What is the process for return or replacement of D1031SH45TXPSA1?

All D1031SH45TXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with D1031SH45TXPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The D1031SH45TXPSA1 part is unused and in its original packaging.

Return procedure for D1031SH45TXPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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