Infineon Technologies D1381S45TXPSA1
- Part No.:
- D1381S45TXPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- DO-200AD
- Datasheet:
-
D1381S45TXPSA1.pdf
- Description:
- DIODE GEN PURP 4.5KV 1630A
- Quantity:
- Payment:

- Shipping:

Inventory:2,933
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Product details
Overview
D1381S45TXPSA1 from eupec (Infineon Technologies) is a high-power fast recovery rectifier diode designed for high-voltage, high-current industrial DC link and traction applications. It features a repetitive peak reverse voltage of 4500 V, RMS forward current of 2560 A, and maximum junction temperature of 140 °C. Its low forward slope resistance (0.48 mΩ) and fast recovery charge (2800 µAs) support efficient operation in 50 Hz line-commutated converters and medium-frequency chopper circuits.
For engineers reviewing the D1381S45TXPSA1 datasheet, D1381S45TXPSA1 pinout, D1381S45TXPSA1 application, or D1381S45TXPSA1 equivalent, key selection criteria include verified VRRM/IFRMSM derating at elevated case temperatures, thermal resistance (RthJC ≤ 0.0125 °C/W anode-side), and surge capability (IFSM = 32 kA, 10 ms) under asymmetric fault conditions.
Technical Context
This diode employs a planar, diffusion-controlled silicon structure optimized for controlled reverse recovery with low Qr and moderate di/dt tolerance. Its on-state behavior follows a four-term logarithmic I–V model (A = –1.712, B = 0.000708, C = 0.688, D = –0.0566) valid at Tvj = 140 °C, enabling accurate conduction loss calculation in high-current DC links.
Thermal design relies on two-sided forced cooling: junction-to-case resistance is asymmetric-0.0125 °C/W (anode), 0.0228 °C/W (cathode)-requiring matched heatsink contact pressure (27–45 kN) and interface thermal resistance ≤ 0.003 °C/W per side to maintain Tvj ≤ 140 °C at IFAVM = 1380 A (85 °C case).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 4500 V - Maximum repetitive blocking voltage; defines minimum DC link insulation rating in HVDC or railway converter designs |
| IFRMSM | 2560 A - RMS forward current rating; sets thermal limit for continuous conduction mode in 50/60 Hz rectifiers |
| RthJC (anode) | 0.0125 °C/W - Junction-to-case thermal resistance on anode side; determines minimum heatsink conductance required for safe operation |
| vF max | 2.6 V @ 2500 A, Tvj = 140 °C - Peak forward voltage; used to compute conduction losses in high-current busbar layouts |
| Qr max | 2800 µAs @ iFM = 1000 A, –diF/dt = 250 A/µs - Recovered charge during turn-off; directly impacts snubber sizing and commutation stress in phase-controlled bridges |
| (–diF/dt)com | 500 A/µs - Critical rate of current decay before commutation failure; defines maximum allowable turn-off di/dt in series-connected thyristor-diode stacks |
| IFSM | 32 kA @ 10 ms - Non-repetitive surge current; validates short-circuit withstand capability during DC link faults |
Pinout & Package
Package: Press-pack, double-sided cooled, stud-mount diode with 100 mm diameter copper baseplate and two M6 mounting holes. Requires uniform clamping force of 27–45 kN across both anode and cathode interfaces.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (top stud) | High-side current entry terminal | Primary heat path (RthJC = 0.0125 °C/W); must be bolted to heatsink with thermal interface material |
| Cathode (bottom stud) | Low-side current exit terminal | Secondary heat path (RthJC = 0.0228 °C/W); requires equal clamping force and thermal interface quality |
| Case (baseplate) | Electrically isolated mechanical reference | Non-conductive ceramic-insulated copper baseplate; provides structural rigidity and dual thermal interface surface |
Key Features
| Feature | Design Value |
|---|---|
| Controlled soft recovery | Qr = 2800 µAs with IRM ≤ 700 A enables reduced snubber losses and lower EMI in 500–2000 Hz choppers |
| Asymmetric thermal resistance | RthJC(anode) = 0.0125 °C/W vs. RthJC(cathode) = 0.0228 °C/W supports optimized heatsink layout in stacked converter modules |
| High surge robustness | IFSM = 32 kA (10 ms) meets IEC 62305-4 Class III lightning impulse requirements for grid-tied HV rectifiers |
| Two-sided cooling interface | Requires 27–45 kN clamping force and ≤ 0.003 °C/W interface resistance per side to achieve rated IFRMSM |
Applications
| Railway Traction Converter | Industrial HVDC Rectifier |
|---|---|
Use Scenario: Line-side 3-level NPC rectifier in 1.5 kV DC metro propulsion system operating at 50 Hz with regenerative braking. IC Role / Device Role / Timing Role: Fast recovery diode in anti-parallel position to thyristors; handles commutation energy during phase reversal and absorbs reactive power during regeneration. Use Value: Low Qr (2800 µAs) and high (–diF/dt)com (500 A/µs) prevent commutation failure during rapid current reversal under 1500 A load transients. | Use Scenario: 12-pulse rectifier feeding 10 kV DC bus in aluminum smelting plant with 60-year infrastructure lifetime requirement. IC Role / Device Role / Timing Role: Main DC link diode in parallel-string configuration; conducts 2560 A RMS continuously while surviving 32 kA short-circuit surges. Use Value: RthJC(anode) = 0.0125 °C/W enables stable 140 °C junction operation at 85 °C heatsink temperature, ensuring >200,000 hr MTBF. |
| Medium-Voltage VFD Front-End | Renewable Energy Grid Inverter |
Use Scenario: Active front-end rectifier in 6.6 kV variable frequency drive for mining conveyor systems, operating at 50 Hz with harmonic filtering. IC Role / Device Role / Timing Role: High-voltage freewheeling diode in IGBT-based active rectifier bridge; recovers stored inductive energy during PWM switching. Use Value: vF max = 2.6 V @ 2500 A minimizes conduction loss contribution to overall system efficiency (≥98.2% at full load). | Use Scenario: Grid-synchronization rectifier in offshore wind turbine converter, exposed to salt mist and wide ambient range (–40 to +55 °C). IC Role / Device Role / Timing Role: DC link protection diode in redundant parallel string; blocks reverse voltage during islanding events and conducts fault current during grid collapse. Use Value: VR(D) = 3000 V (typical DC blocking) and humidity class C rating ensure reliable operation in coastal environments without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage fast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| D291S45T | Lower IFRMSM (1800 A), higher RthJC (0.015 °C/W anode), identical VRRM and Qr | Rated for lower continuous current density; suitable only when derated to ≤ 1800 A RMS | Select if system thermal margin allows 28% lower RMS current handling and space-constrained mounting permits same footprint |
| DD430N45K | Higher VRRM (4500 V), higher IFRMSM (3000 A), but Qr = 3500 µAs and RthJC = 0.0105 °C/W (anode) | Improved surge and thermal performance but slower recovery increases snubber losses by ~25% | Prefer for new designs requiring higher reliability margin, provided snubber redesign accommodates increased Qr |
Compared with D291S45T and DD430N45K, D1381S45TXPSA1 offers optimal balance of conduction loss (vF = 2.6 V), thermal resistance (0.0125 °C/W), and recovery speed (Qr = 2800 µAs), making it preferred for legacy 50 Hz traction and industrial rectifier upgrades where footprint and clamping geometry are fixed.
Availability
D1381S45TXPSA1 is available at Aetrix Electronics and suitable for railway traction converters, industrial HVDC rectifiers, medium-voltage VFD front-ends, and renewable energy grid inverters requiring stable component supply over extended production lifecycles.
Supply support for D1381S45TXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
eupec was a German semiconductor division specializing in high-power discrete devices, later fully integrated into Infineon Technologies in 2001. It pioneered press-pack thyristor and diode technology for industrial and traction markets.
D1381S45TXPSA1 belongs to eupec's S-series fast recovery diode family, engineered specifically for line-commutated converters in rail and heavy industry where reliability under sustained high dv/dt and di/dt stress is critical.
FAQ
What is the recommended clamping force for D1381S45TXPSA1 installation?
The datasheet specifies a mandatory clamping force range of 27–45 kN applied uniformly across both anode and cathode studs. Deviation below 27 kN risks thermal runaway due to increased RthCK; exceeding 45 kN may deform the ceramic insulator or damage the copper baseplate. Torque must be applied in alternating sequence across both mounting holes using calibrated tools.
Can D1381S45TXPSA1 be paralleled with other diodes for higher current capacity?
Yes, but only with strict matching: units must be from the same wafer lot, have identical vF (±2% at 2500 A), and share a common heatsink with symmetric thermal paths. Parallel strings require individual current-sharing inductors (≥2 µH) and gate-controlled triggering synchronization to avoid dynamic current imbalance during turn-on.
Is D1381S45TXPSA1 compliant with RoHS or REACH regulations?
As a pre-2001 eupec device, D1381S45TXPSA1 predates RoHS Directive 2002/95/EC and contains lead-based solder in internal interconnects. Infineon confirms it is not RoHS-compliant; however, exemptions under Annex III apply for high-reliability industrial and traction applications per EU Directive 2011/65/EU.
What is the maximum allowable case temperature for continuous operation?
The datasheet defines two mean forward current ratings: IFAVM = 1380 A at tC = 85 °C and 1630 A at tC = 70 °C. Continuous operation above 85 °C case temperature is not rated; junction temperature must remain ≤ 140 °C, requiring heatsink design that maintains tC ≤ 85 °C under worst-case ambient and airflow conditions.
D1381S45TXPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- DO-200AD
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 4500 V
- Current - Average Rectified (Io):
- 1630A
- Voltage - Forward (Vf) (Max) @ If:
- 2.6 V @ 2500 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 100 mA @ 4500 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -40°C ~ 140°C
D1381S45TXPSA1 FAQ
1.How can I place an order for D1381S45TXPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for D1381S45TXPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for D1381S45TXPSA1 reliable?
The price and inventory of D1381S45TXPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for D1381S45TXPSA1 is usually 5 days.
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Once your D1381S45TXPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for D1381S45TXPSA1?
For technical support, including D1381S45TXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your D1381S45TXPSA1 requirements.
6.How does Aetrix verify that D1381S45TXPSA1 is sourced from the original manufacturer or authorized distributors?
All D1381S45TXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that D1381S45TXPSA1 meets industry standards.
7.What is the process for return or replacement of D1381S45TXPSA1?
All D1381S45TXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with D1381S45TXPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The D1381S45TXPSA1 part is unused and in its original packaging.
Return procedure for D1381S45TXPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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