Infineon Technologies D4201N22TXPSA1

Overview

D4201N22TXPSA1 from Infineon Technologies is a high-power, hermetically sealed ceramic press-pack rectifier diode rated for 2200 V repetitive peak reverse voltage (VRRM), 4240 A average forward current at 100 °C case temperature (IFAVM), and 88 kA non-repetitive surge current (IFSM). It features 0.668 V threshold voltage (VT0), 0.083 mΩ slope resistance (rT), and is designed for crowbar protection and high-current drive rectification in industrial medium-voltage converters.

For engineers reviewing the D4201N22TXPSA1 datasheet, D4201N22TXPSA1 pinout, D4201N22TXPSA1 application, or D4201N22TXPSA1 equivalent, key selection criteria include clamping force range (36–52 kN), two-sided cooling thermal resistance (RthJC = 8.5 K/kW), junction temperature limit (160 °C), and reverse recovery charge (Qr ≤ 1.75 mAs at 1000 V).

Technical Context

This device is a silicon-based, pressure-contact, double-sided cooled rectifier diode with full 50/60 Hz blocking capability across –40 °C to +160 °C operating temperature. Its low VT0 and rT enable high-efficiency conduction at multi-kiloampere DC levels, while its hermetic ceramic package ensures long-term reliability under high mechanical stress and contamination-prone environments.

The diode exhibits controlled reverse recovery behavior: Qr = 1.6 mAs (typ.) and IRM = 105 A (typ.) at VR = 100 V, –di/dt = 10 A/µs; Qr = 1.75 mAs (max) and IRM = 175 A (max) at VR = 1000 V. Thermal transient impedance modeling supports precise junction temperature estimation under pulsed load conditions.

Key Specifications

Pinout & Package

Package: Hermetically sealed ceramic press-pack (double-sided cooling), Ø121 mm diameter, 86 mm contact diameter, 35 mm height, 1700 g typical weight. Requires external clamping between anode and cathode heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power rectifier applications.

Compared with D4201N22TXPSA1, MDD420-22N1 trades 40 A IFAVM and 0.5 K/kW thermal penalty for cross-supplier sourcing flexibility, while CM4200HA-22 delivers measurable thermal and current advantage with rail-certified validation-making it preferable for safety-critical mobility systems.

Availability

D4201N22TXPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, medium-voltage rectifier stacks, crowbar protection circuits, and traction converter inverters requiring stable component supply across multi-year production cycles.

Supply support for D4201N22TXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

D4201N22TXPSA1 belongs to Infineon's high-power press-pack diode product line, engineered specifically for ruggedized, high-current rectification and protection in medium-voltage industrial and traction systems.

FAQ

What is the recommended clamping force range for D4201N22TXPSA1 installation?

The device requires a mechanical clamping force between 36 kN and 52 kN applied uniformly across the anode and cathode surfaces. This range ensures optimal thermal contact resistance and electrical conductivity while preventing ceramic housing fracture. Torque values must be derived from the specific heatsink interface geometry and bolt pattern; deviation outside this window risks premature thermal runaway or contact failure.

Does D4201N22TXPSA1 support single-sided cooling?

No-D4201N22TXPSA1 is designed exclusively for two-sided cooling. Its thermal resistance rating of 8.5 K/kW assumes symmetrical heatsink contact on both anode and cathode surfaces. Single-sided mounting increases RthJC to 14.9–19.8 K/kW, drastically reducing safe operating current and risking junction overheating even at 50% rated load.

How does reverse recovery performance vary with voltage and di/dt?

At VR = 100 V and –di/dt = 10 A/µs, Qr is 1.6 mAs (typ.) and IRM is 105 A (typ.). At VR = 1000 V under identical di/dt, Qr rises to 1.75 mAs (max) and IRM to 175 A (max). Higher reverse voltage increases stored charge and peak reverse current, demanding careful snubber design and layout optimization to suppress EMI and voltage overshoot.

Can D4201N22TXPSA1 be used in parallel configurations?

Yes-but only with strict dynamic current sharing measures. Due to inherent parameter spread in VT0 and rT, paralleling requires matched devices, identical thermal mounting, and external ballasting (e.g., low-inductance series resistors or saturable reactors). Without such measures, current imbalance exceeding 20% can occur, leading to thermal runaway in the most conductive unit.