Infineon Technologies D4810N28TVFXPSA1

Overview

D4810N28TVFXPSA1 from Infineon Technologies is a high-power, press-pack silicon rectifier diode designed for industrial AC/DC conversion in medium-voltage drive systems and traction inverters. It delivers 4810 A average on-state current at TC = 100°C, 2800 V repetitive peak reverse voltage (VRRM), and supports 80 kA surge current (IFSM) at 10 ms, enabling robust operation in 3-phase line-commutated rectifiers for rail propulsion and HVDC converter valves.

For engineers reviewing the D4810N28TVFXPSA1 datasheet, D4810N28TVFXPSA1 pinout, D4810N28TVFXPSA1 application, or D4810N28TVFXPSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.0080 °C/W two-sided), forward voltage drop (1.45 V @ 10 kA), and transient thermal impedance behavior under sinusoidal vs. rectangular conduction angles - all critical for thermal design in forced-cooled power modules.

Technical Context

This device is a single-anode/single-cathode, two-terminal, unidirectional power rectifier with no gate control or recovery optimization circuitry. Its on-state characteristic follows a four-parameter polynomial model (A=1.181, B=1.391E-05, C=-9.794E-02, D=1.031E-02) valid from 1500 A to 20,000 A at Tvj max, and exhibits a threshold voltage of 0.83 V and slope resistance of 0.062 mΩ at maximum junction temperature.

Thermal performance is defined by dual-sided clamping cooling: junction-to-case resistance is 0.0080 °C/W (two-sided, θ = 180° sin), rising to 0.0174 °C/W when cooled only at the anode. Transient thermal impedance ZthJC shows strong time-dependence, ranging from 0.000030 °C/W at 55 µs to 0.0080 °C/W at steady state under DC conditions.

Key Specifications

Pinout & Package

Package: Press-pack, double-side cooled, stud-mount diode with isolated anode and cathode terminals. Requires mechanical clamping force of 42–95 kN and features creepage distance of 30 mm. Weight: ~1200 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power rectifier diode applications.

Compared with D4810N28TVFXPSA1, DD480N28K offers near-identical electrical performance with marginal current reduction, while SKKH 570/28 provides higher current capacity at the cost of mechanical redesign - making the former ideal for like-for-like replacement and the latter for performance-limited thermal upgrades.

Availability

D4810N28TVFXPSA1 is available at Aetrix Electronics and suitable for rail traction rectifiers, industrial medium-voltage drives, HVDC converter valves, and grid-scale energy storage inverters requiring stable component supply across multi-year production programs.

Supply support for D4810N28TVFXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This part belongs to Infineon's "High Power Diodes" product line, engineered specifically for high-current, high-voltage industrial rectification and line-commutated converter applications where reliability under extreme thermal and surge stress is non-negotiable.

FAQ

What is the recommended clamping force for D4810N28TVFXPSA1?

The datasheet specifies a mechanical clamping force range of 42–95 kN for reliable thermal and electrical contact. Lower values (42–60 kN) are sufficient for continuous DC operation at rated current, while upper values (75–95 kN) are advised for applications involving frequent surge events or high di/dt transients to minimize contact resistance drift.

Does D4810N28TVFXPSA1 have a specified reverse recovery time (trr)?

No - this is a standard (non-fast) recovery rectifier diode optimized for line-frequency applications. Instead of trr, its behavior is characterized by recovered charge (Qr), which ranges from 100 µAs at 100 A to 1000 µAs at 2000 A under specified test conditions (dv/dt = 0.33–0.67 VRRM, RC snubber). Recovery is not intended for high-frequency switching.

Can D4810N28TVFXPSA1 be used in parallel configurations?

Yes, but only with strict current-sharing design: matched forward voltage characteristics (vF tolerance ≤ 5%), symmetrical busbar layout, and individual thermal management per device. The datasheet provides vF curves and slope resistance (rT = 0.062 mΩ) to support parallel derating calculations - typical design practice limits per-device loading to ≤ 85% of rated IFAVM.

What is the maximum allowable case temperature during overload pulses?

The absolute maximum case temperature remains limited to 150°C per datasheet specification, even during short overloads. For example, at 6940 A IFAVM (TC = 55°C, 180° conduction), case temperature must not exceed 150°C - requiring active cooling and careful transient thermal modeling using the provided ZthJC analytical function and τn time constants.