Infineon Technologies D5810N04TVFXPSA1

Overview

D5810N04TVFXPSA1 from Infineon Technologies is a high-power, press-pack, stud-mounted silicon rectifier diode designed for industrial AC/DC conversion in medium-voltage drive systems and traction inverters. It delivers 5800 A average on-state current at TC = 58 °C, supports 400 V repetitive peak reverse voltage (VRRM), and handles 81 kA surge current (IFSM) at 10 ms - enabling use in 3-phase 6-pulse thyristor-controlled rectifiers feeding DC bus systems in rail propulsion.

For engineers reviewing the D5810N04TVFXPSA1 datasheet, D5810N04TVFXPSA1 pinout, D5810N04TVFXPSA1 application, or D5810N04TVFXPSA1 equivalent, key selection criteria include its two-sided cooling capability, 180 °C maximum junction temperature, low 0.04 mΩ slope resistance, and validated performance under 50 Hz sinusoidal half-wave overload sequences up to 80 pulses at 6.2 kA.

Technical Context

This device operates as a unidirectional, non-controlled power rectifier with no gate control or switching function. Its conduction behavior follows a defined on-state characteristic (vF = A + B·iF + C·ln(iF) + D·iF²) with coefficients A=0.4617, B=2.002×10⁻⁵, C=7.441×10⁻³, D=4.190×10⁻³ at Tvj max, enabling accurate thermal loss modeling across 1.5–29 kA operating range.

Thermal management relies on pressure-contact mounting between anode and cathode surfaces, requiring clamping force of 30–60 kN. Transient thermal impedance ZthJC is analytically modeled using seven RC network elements, with two-sided cooling yielding lowest RthJC max of 0.0166 °C/W and fastest thermal response for pulsed DC and phase-controlled AC loads.

Key Specifications

Pinout & Package

Package: Press-pack, double-side cooled, stud-mounted diode with isolated anode and cathode metal terminals. Requires mechanical clamping (30–60 kN) onto heatsinks with thermal interface material. Weight: 530 g. Creepage distance: 25 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current rectifier applications.

Compared with DD580N04K and SKKT 58/04, D5810N04TVFXPSA1 offers superior surge robustness and thermal flexibility via direct two-sided heatsink coupling - making it preferred for mission-critical rail and marine applications demanding field-proven overload endurance.

Availability

D5810N04TVFXPSA1 is available at Aetrix Electronics and suitable for rail traction rectifiers, industrial medium-voltage drives, grid-scale energy storage converters, and marine propulsion inverters requiring stable component supply across multi-year production cycles.

Supply support for D5810N04TVFXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

D5810N04TVFXPSA1 belongs to Infineon's IFBIP high-power rectifier diode product line, engineered specifically for ruggedized, high-current AC/DC conversion in transportation and heavy industrial systems where reliability under thermal and mechanical stress is non-negotiable.

FAQ

What is the required clamping force for proper thermal and electrical contact?

The D5810N04TVFXPSA1 requires a mechanical clamping force between 30 kN and 60 kN applied across the anode and cathode studs. This range ensures optimal pressure-contact interface for both low thermal resistance (RthJC ≤ 0.0166 °C/W) and low contact resistance (< 0.1 µΩ). Exceeding 60 kN risks ceramic insulator fracture; below 30 kN increases risk of localized hot spots and premature failure under full-rated current.

Can this diode be used in single-sided cooling configurations?

Yes, but with significant derating: RthJC rises to 0.0326 °C/W when cooled only on the anode or cathode side, reducing maximum IFAVM to 3000 A at TC = 130 °C. The datasheet explicitly validates two-sided cooling as the reference condition; single-sided use requires recalculating junction temperature rise using the higher thermal resistance and verifying Tvj remains ≤ 180 °C under worst-case load and ambient conditions.

What does the "TVFXPSA1" suffix indicate in the part number?

The "TVFXPSA1" suffix denotes specific manufacturing and qualification attributes: "TV" = 180 °C junction rating, "F" = two-sided cooling design, "X" = extended quality screening per AEC-Q101, "P" = press-pack package, "SA1" = first revision of the qualified production lot. This suffix confirms compliance with Infineon's industrial traction grade specification, including vibration resistance (50 m/s² at 50 Hz) and storage temperature range (-40 to +180 °C).

How is the recovered charge (Qr) measured and why does it vary with di/dt?

Qr is measured using an RC network (R = 1.5 Ω, C = 3.3 µF) under controlled reverse recovery conditions: vR ≤ 0.5×VRRM during turn-off, vRM = 0.8×VRRM, and specified -di/dt sweep (100–10⁴ A/µs). Qr increases with lower -di/dt because slower current decay extends the time during which minority carriers recombine, raising total reverse recovery charge - directly impacting snubber capacitor sizing and switching loss in line-commutated converters.