Infineon Technologies D5810N06TVFXPSA1

Overview

D5810N06TVFXPSA1 from Infineon Technologies is a high-power, press-pack silicon rectifier diode designed for industrial AC/DC conversion in medium-voltage drive systems and traction inverters. It delivers 5800 A average on-state current at TC = 58 °C, 400 V repetitive peak reverse voltage (VRRM), and supports two-sided cooling with 0.0166 °C/W junction-to-case thermal resistance - enabling use in 3.3 kV–4.5 kV converter stacks for rail propulsion.

For engineers reviewing the D5810N06TVFXPSA1 datasheet, D5810N06TVFXPSA1 pinout, D5810N06TVFXPSA1 application, or D5810N06TVFXPSA1 equivalent, key selection criteria include its 81 kA surge current rating (tP = 10 ms), 180 °C maximum junction temperature, low 0.04 mΩ slope resistance, and validated performance under 50 Hz sinusoidal half-wave overload sequences up to 80 pulses at 6.2 kA.

Technical Context

This device operates as a unidirectional, non-controlled power rectifier in series- or parallel-connected modules within high-current, high-reliability DC link circuits. Its pressure-contact Si pellet construction enables direct thermal coupling to heatsinks without solder fatigue, and its 180 °C Tvj max rating allows operation under sustained overloads in forced-air or liquid-cooled converter cabinets.

The diode exhibits a defined on-state characteristic (vF = A + B·iF + C·ln(iF) + D·iF²) with coefficients A=0.4617, B=2.002×10⁻⁵, C=7.441×10⁻³, D=4.190×10⁻³ at Tvj max, supporting accurate conduction loss modeling. Reverse recovery charge Qr ranges from 100 µAs (at -di/dt = 100 A/µs) to 10,000 µAs (at -di/dt = 10,000 A/µs), measured under vR ≤ 0.5·VRRM and vRM = 0.8·VRRM with RC snubber (R=1.5 Ω, C=3.3 µF).

Key Specifications

Pinout & Package

Package: Press-pack, double-side cooled, stud-mounted diode with isolated anode and cathode terminals. Mechanical clamping force: 30–60 kN. Weight: 530 g. Creepage distance: 25 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current rectifier diode applications.

Compared with DD580N04K and SKKT 58/16 E, D5810N06TVFXPSA1 uniquely combines 5.8 kA average current, 400 V blocking, and true two-sided thermal interface - making it irreplaceable in high-power density, high-reliability converter stacks where thermal management dominates design constraints.

Availability

D5810N06TVFXPSA1 is available at Aetrix Electronics and suitable for rail traction inverters, medium-voltage industrial drives, and HVDC converter valves requiring stable component supply across multi-year production programs.

Supply support for D5810N06TVFXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy infrastructure markets.

D5810N06TVFXPSA1 belongs to Infineon's IFBIP high-power press-pack diode product line, engineered specifically for reliability-critical, high-current rectification in traction, grid, and marine propulsion systems where solder-free thermal interfaces and extreme surge robustness are mandatory.

FAQ

What is the recommended clamping force for D5810N06TVFXPSA1 installation?

The datasheet specifies a mechanical clamping force range of 30–60 kN for reliable electrical contact and optimal thermal transfer. Applying force below 30 kN risks increased contact resistance and localized heating; exceeding 60 kN may deform the copper housing or damage internal Si pellet bonding. Use calibrated hydraulic tools and follow Infineon's torque-to-force conversion chart for M12 studs.

Can D5810N06TVFXPSA1 be used in single-sided cooling configurations?

Yes, but with significant derating: the datasheet lists RthJC = 0.0326 °C/W for anode-side-only cooling and 0.0320 °C/W for cathode-side-only cooling - more than double the two-sided value. At IFAVM = 5800 A, this increases junction temperature rise by ~110 K versus two-sided mounting, limiting usable current to approximately 2900 A at TC = 58 °C.

Does D5810N06TVFXPSA1 have AEC-Q101 qualification?

No - this device is not AEC-Q101 qualified. It is specified per Infineon's industrial power diode standards (IFBIP series) and intended for rail, energy, and marine applications. Its qualification includes vibration testing (50 Hz, 50 m/s²), thermal cycling (-40 °C to +180 °C), and long-term high-temperature storage, but does not meet automotive-specific stress test profiles or failure analysis reporting requirements.

How is the on-state voltage vF modeled across current range?

vF is modeled using the four-parameter equation vF = A + B·iF + C·ln(iF) + D·iF², with coefficients A = 0.4617 V, B = 2.002×10⁻⁵ V/A, C = 7.441×10⁻³ V, D = 4.190×10⁻³ V/A², all valid at Tvj = 180 °C. This model fits measured data between 1500 A and 29,000 A and is implemented in Infineon's PLECS and SaberRD behavioral models for loss simulation.