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Infineon Technologies D650S12TXPSA1
- Part No.:
- D650S12TXPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- DO-200AB, B-PUK
- Datasheet:
-
D650S12TXPSA1.pdf
- Description:
- DIODE GEN PURP 1.2KV 620A
- Quantity:
- Payment:
- Shipping:
Inventory:3,084
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Product details
Overview
D650S12TXPSA1 from Infineon Technologies is a 1200 V, 1400 A RMS fast recovery diode in a pressure-contact stud-mount package, rated for 620 A average on-state current at 100°C case temperature, with 5.3 µs reverse recovery time and 370 µAs recovered charge - used in high-power industrial rectification and traction inverters.
For engineers reviewing the D650S12TXPSA1 datasheet, D650S12TXPSA1 pinout, D650S12TXPSA1 application, or D650S12TXPSA1 equivalent, key selection criteria include repetitive peak reverse voltage (1200 V), surge current capability (12.2 kA), thermal resistance (0.048 °C/W junction-to-case, two-sided cooling), and fast soft-recovery behavior for reduced EMI in high-frequency switching converters.
Technical Context
This device is a silicon planar fast recovery diode with a soft reverse recovery characteristic, designed for forced-commutated circuits requiring low switching losses and controlled dv/dt during turn-off. Its 5.3 µs trr and 122 A peak reverse recovery current (IRM) are measured under standardized IEC 747-2 conditions (iFM = 900 A, -diF/dt = 50 A/µs).
The diode features a threshold voltage of 1.0 V and slope resistance of 0.45 mΩ at maximum junction temperature, enabling predictable forward conduction loss modeling. Its transient thermal impedance supports pulsed operation up to 10 ms with validated ZthJC curves for anode-, cathode-, and two-sided cooling configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Maximum repetitive reverse blocking voltage; defines safe DC or AC peak voltage rating in rectifier or freewheeling applications. |
| IFRMSM | 1400 A - Maximum RMS on-state current; sets continuous conduction limit under sinusoidal 180° conduction at rated thermal conditions. |
| IFAVM (TC=100°C) | 620 A - Average forward current derated for 100°C heatsink temperature; determines steady-state power dissipation capability. |
| trr | 5.3 µs - Reverse recovery time under IEC 747-2 Method II; directly impacts switching loss and snubber design in hard-switched inverters. |
| Qr | 370 µAs - Recovered reverse charge; governs tail current energy and EMI generation during diode turn-off transitions. |
| RthJC (two-sided) | 0.048 °C/W - Junction-to-case thermal resistance with dual-side cooling; enables accurate thermal design for high-power modules. |
| vF max (2700 A) | 2.25 V - Maximum forward voltage at 2700 A and Tvj max; used for worst-case conduction loss calculation in short-circuit or overload scenarios. |
Pinout & Package
Package: Pressure-contact stud-mount (double-sided cooled), Si pellet with clamping force 6–14.5 kN, weight ≈270 g, creepage distance 25 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Stud) | High-current input terminal | Conductive metal stud serving as primary current entry point and mechanical mounting surface; requires torque-controlled clamping. |
| Cathode (Stud) | High-current output terminal | Second conductive stud forming low-inductance return path; enables symmetrical two-sided heat extraction. |
Key Features
| Feature | Design Value |
|---|---|
| Soft reverse recovery | trr = 5.3 µs with soft tail current profile - reduces voltage overshoot and EMI in high-di/dt switching environments. |
| Low thermal resistance | RthJC = 0.048 °C/W (two-sided cooling) - supports >1 MW/cm² power density in compact industrial drives and traction systems. |
| High surge robustness | IFS M = 12.2 kA (10 ms, Tvj = 25°C) - withstands short-circuit currents in motor drives without bond-wire fusing. |
| Controlled forward voltage | vF ≤ 2.25 V at 2700 A and Tvj max - enables precise conduction loss budgeting in multi-kW converter thermal models. |
Applications
| Industrial Rectifier Systems | Traction Inverters |
|---|---|
Use Scenario: 3-phase uncontrolled rectification feeding DC link capacitors in high-power UPS and industrial SMPS. IC Role / Device Role / Timing Role: Fast-recovery diode providing low-loss, low-EMI AC-to-DC conversion with minimal reverse recovery stress on upstream thyristors or IGBTs. Use Value: 370 µAs Qr and 5.3 µs trr reduce snubber losses by >35% compared to standard recovery diodes in 400–800 Hz line-frequency applications. | Use Scenario: Freewheeling path in 1.5–3 MW railway traction inverters operating at 200–500 Hz PWM carrier frequencies. IC Role / Device Role / Timing Role: High-current freewheeling diode absorbing inductive energy during IGBT turn-off, requiring soft recovery to limit voltage spikes across switching devices. Use Value: 12.2 kA IFSM and 0.048 °C/W RthJC enable reliable operation under repeated short-circuit fault conditions without thermal runaway. |
| Medium-Voltage Drives | Renewable Energy Converters |
Use Scenario: Line-commutated rectifier stage in 6.6 kV medium-voltage variable frequency drives for mining and marine propulsion. IC Role / Device Role / Timing Role: High-voltage, high-RMS-current diode handling 1400 A RMS conduction while maintaining <2.25 V forward drop at full load. Use Value: 620 A IFAVM at TC = 100°C allows direct integration into liquid-cooled busbar assemblies without external derating. | Use Scenario: Grid-side rectification in 2–5 MW wind turbine converters interfacing doubly-fed induction generators (DFIG) or full-power converters. IC Role / Device Role / Timing Role: High-efficiency, high-reliability diode in active front-end or passive rectifier topologies exposed to grid transients and harmonic currents. Use Value: 150°C Tvj max and 200 mA IR at VRRM ensure stable operation under elevated ambient temperatures and partial shading-induced overvoltage events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast recovery diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MDD650-12N1 | Same VRRM (1200 V), lower IFRMSM (1250 A), higher trr (6.5 µs), higher Qr (450 µAs) | Less suitable for high-di/dt traction inverters due to slower recovery and higher recovered charge | Select when cost sensitivity outweighs EMI performance requirements in industrial rectifiers |
| STMicroelectronics STTH12012TV1 | Lower VRRM (1200 V same), significantly lower IFRMSM (120 A), TO-247 package, not stud-mount | Only viable for low-power auxiliary supplies, not main power conversion stages | Reject for any application requiring >500 A RMS current or stud-mount mechanical integration |
Compared with MDD650-12N1 and STTH12012TV1, D650S12TXPSA1 delivers superior surge robustness (12.2 kA vs. 10.5 kA), lower thermal resistance (0.048 vs. 0.065 °C/W), and faster soft recovery - making it uniquely suited for mission-critical high-power traction and industrial drive systems where reliability under transient stress is non-negotiable.
Availability
D650S12TXPSA1 is available at Aetrix Electronics and suitable for industrial rectifier systems, traction inverters, medium-voltage drives, and renewable energy converters requiring stable component supply and long-term production continuity.
Supply support for D650S12TXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
This part belongs to Infineon's "Fast Recovery Diode" product line, engineered specifically for high-power, high-reliability rectification and freewheeling in traction, industrial drives, and renewable energy infrastructure.
FAQ
What is the maximum allowable clamping force for D650S12TXPSA1?
The specified clamping force range is 6–14.5 kN. Exceeding 14.5 kN risks mechanical damage to the silicon die or deformation of the pressure-contact interface, while forces below 6 kN increase contact resistance and thermal impedance. Torque must be applied evenly across both studs using calibrated tools per Infineon's mounting guidelines.
Can D650S12TXPSA1 be used in single-sided cooling configurations?
Yes - the datasheet provides separate RthJC values for anode-sided (0.085 °C/W), cathode-sided (0.103 °C/W), and two-sided cooling (0.048 °C/W). Single-sided use is permitted but requires derating of IFAVM by ~35% versus two-sided mounting to maintain Tvj ≤ 150°C under full load.
What is the significance of the 5 µs forward recovery time (tfr)?
tfr = 5 µs is the interval between initial forward current rise and establishment of stable conduction, measured at 2700 A and 50 A/µs diF/dt. It influences voltage overshoot during forced commutation and must be accounted for in snubber design and gate-drive timing margins in resonant or zero-voltage-switching topologies.
Does D650S12TXPSA1 meet AEC-Q101 for automotive use?
No - this device is not qualified to AEC-Q101. The datasheet explicitly references IFBIP D AEC (a legacy internal designation), but the part lacks formal automotive qualification, including temperature cycling, humidity testing, and failure analysis per AEC standards. It is intended for industrial and energy infrastructure applications only.
D650S12TXPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- DO-200AB, B-PUK
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 620A
- Voltage - Forward (Vf) (Max) @ If:
- 2.25 V @ 1200 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 5.3 µs
- Current - Reverse Leakage @ Vr:
- 20 mA @ 1200 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Clamp On
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -40°C ~ 150°C
D650S12TXPSA1 FAQ
1.How can I place an order for D650S12TXPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for D650S12TXPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for D650S12TXPSA1 reliable?
The price and inventory of D650S12TXPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for D650S12TXPSA1 is usually 5 days.
3.What payment methods are accepted for D650S12TXPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for D650S12TXPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for D650S12TXPSA1?
D650S12TXPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your D650S12TXPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for D650S12TXPSA1?
For technical support, including D650S12TXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your D650S12TXPSA1 requirements.
6.How does Aetrix verify that D650S12TXPSA1 is sourced from the original manufacturer or authorized distributors?
All D650S12TXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that D650S12TXPSA1 meets industry standards.
7.What is the process for return or replacement of D650S12TXPSA1?
All D650S12TXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with D650S12TXPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The D650S12TXPSA1 part is unused and in its original packaging.
Return procedure for D650S12TXPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
D650S12TXPSA1 Tags
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