Infineon Technologies D740N46TXPSA1

Overview

D740N46TXPSA1 from Infineon Technologies is a high-power, press-pack silicon rectifier diode designed for industrial AC/DC conversion in medium- to high-voltage thyristor/diode stacks. It delivers 750 A average on-state current at TC = 100 °C, supports 4600 V repetitive peak reverse voltage (VRRM), and sustains 14 kA surge current (IFSM) at tP = 10 ms - enabling use in 3.3 kV–4.5 kV HVDC converter valves and traction rectifiers.

For engineers reviewing the D740N46TXPSA1 datasheet, D740N46TXPSA1 pinout, D740N46TXPSA1 application, or D740N46TXPSA1 equivalent, key selection criteria include junction-to-case thermal resistance (RthJC ≤ 0.039 °C/W two-sided), forward voltage drop (vF ≤ 2.94 V at 3 kA), and transient thermal impedance behavior under 50 Hz half-wave overload sequences.

Technical Context

This device operates as a unidirectional, non-controlled power rectifier with a planar, diffusion-processed silicon die mounted in a double-sided cooled, pressure-contact package. Its on-state characteristic follows a four-parameter logarithmic model (A=0.777, B=4.939×10⁻⁴, C=−1.975×10⁻², D=1.549×10⁻²), enabling precise conduction loss modeling across 200–4000 A.

Thermal performance is defined by dual-path heat flow: RthJC varies with cooling configuration (0.039 °C/W two-sided vs. 0.087 °C/W cathode-only), and transient ZthJC curves are provided analytically for DC, sinusoidal, and rectangular waveforms - critical for predicting junction temperature rise during short-duration overloads.

Key Specifications

Pinout & Package

Package: Press-pack, double-sided cooled, stud-mounted rectifier diode with isolated anode and cathode terminals. Requires clamping force of 10–24 kN and provides 25 mm creepage distance. Weight: 280 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage rectifier diode applications.

Compared with DD740N46K and D750N46TXPSA1, D740N46TXPSA1 offers superior thermal performance (0.039 °C/W RthJC) and lower conduction loss (2.94 V), making it optimal for high-efficiency, high-reliability liquid-cooled HVDC and traction systems where junction temperature control is critical.

Availability

D740N46TXPSA1 is available at Aetrix Electronics and suitable for high-voltage DC transmission, railway traction rectification, and industrial medium-frequency furnace applications requiring stable component supply and long-term lifecycle support.

Supply support for D740N46TXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

D740N46TXPSA1 belongs to Infineon's IFBIP-D high-power rectifier diode product line, engineered for series-stacked valve applications in energy infrastructure where voltage scalability, thermal robustness, and surge endurance are primary design drivers.

FAQ

What is the maximum allowable clamping force for D740N46TXPSA1?

The specified clamping force range is 10–24 kN. Applying less than 10 kN risks increased thermal resistance and premature thermal failure; exceeding 24 kN may deform the copper housing or damage internal pressure contacts. Torque must be applied evenly across both studs using calibrated tools and verified with strain gauges in production assembly.

Can D740N46TXPSA1 be used in single-sided cooling configurations?

Yes, but with significant derating: RthJC rises to 0.087 °C/W (anode-cooled) or 0.084 °C/W (cathode-cooled), reducing maximum IFAVM to approximately 380 A at TC = 100 °C. Transient thermal impedance also degrades - ZthJC at 1 s increases by >2.5× versus two-sided mounting, requiring revised overload protection settings.

How does the on-state voltage vary with junction temperature?

vF decreases as Tvj increases: at Tvj = 25 °C, vF ≈ 1.45 V (700 A); at Tvj = 160 °C, vF ≈ 2.94 V (3000 A). This positive temperature coefficient stabilizes current sharing in parallel-connected devices and prevents thermal runaway during overload conditions.

Is D740N46TXPSA1 compliant with AEC-Q101 for automotive use?

No - D740N46TXPSA1 is not AEC-Q101 qualified. It is designed for industrial and energy infrastructure applications per Infineon's IFBIP-D specification. Its −40…+160 °C operating range supports harsh environments, but automotive qualification requires additional stress testing (e.g., board-level vibration, ESD, and lifetime validation) not performed on this part.