Infineon Technologies D950N18TXPSA1

Overview

D950N18TXPSA1 from Infineon Technologies is a high-power, press-pack silicon rectifier diode designed for industrial AC/DC conversion in medium-voltage drive systems and traction inverters. It delivers 950 A average on-state current at 100 °C case temperature, supports 1800 V repetitive peak reverse voltage, and withstands 12.8 kA surge current (10 ms, T_vj = 25 °C), enabling robust operation in 3-phase line-commutated rectifiers for rail propulsion and HVDC converters.

For engineers reviewing the D950N18TXPSA1 datasheet, D950N18TXPSA1 pinout, D950N18TXPSA1 application, or D950N18TXPSA1 equivalent, key selection criteria include its two-sided cooling capability, 0.045 °C/W max junction-to-case thermal resistance, 2.10 V max forward voltage at 2.8 kA, and 819 kA²s I²t rating - all critical for thermal design and short-circuit coordination in high-current power electronics.

Technical Context

This device is a non-controlled, asymmetrical, pressure-contact silicon rectifier diode with no gate control or recovery tail. Its conduction behavior follows a defined on-state characteristic (v_F = A + B·i_F + C·ln(i_F) + D·i_F²) with coefficients A=0.563, B=3.66×10⁻⁴, C=3.066×10⁻³, D=9.626×10⁻³ at T_vj = 180 °C.

Thermal performance is defined by transient impedance Z_thJC curves for anode-, cathode-, and two-sided cooling configurations, with DC thermal resistance ranging from 0.041 °C/W (two-sided) to 0.092 °C/W (anode-only). Reverse recovery charge Q_r is specified under controlled RC network conditions (R = 5.6 Ω, C = 0.68 µF) at multiple di/dt rates up to 10 kA/µs.

Key Specifications

Pinout & Package

Package: Press-pack, double-side cooled, stud-mounted silicon rectifier diode with isolated anode and cathode terminals. Requires mechanical clamping force of 6–12 kN and provides 10 mm creepage distance. Weight: 82 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current rectifier diode applications.

Compared with DD950N18K and D950N22TXPSA1, D950N18TXPSA1 offers optimal balance of blocking voltage, conduction capability, and thermal efficiency for 2.2–2.5 kV industrial rectifiers - delivering lowest v_F-based losses at rated current while maintaining proven reliability in two-sided cooled valve stacks.

Availability

D950N18TXPSA1 is available at Aetrix Electronics and suitable for industrial medium-voltage rectification, railway traction converters, and HVDC converter valves requiring stable component supply, long-term lifecycle support, and traceable sourcing for safety-critical deployments.

Supply support for D950N18TXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

D950N18TXPSA1 belongs to Infineon's IFBIP high-power press-pack diode product line, engineered specifically for line-commutated converter valves in traction, energy transmission, and heavy industrial drive systems where reliability under extreme thermal and electrical stress is mandatory.

FAQ

What is the recommended clamping force for D950N18TXPSA1 installation?

The datasheet specifies a mechanical clamping force of 6–12 kN for reliable thermal and electrical contact. Use calibrated torque tools and follow Infineon's mounting procedure (document ID: IFBIP-MT-2010) to avoid pellet fracture or uneven heat transfer. Exceeding 12 kN risks silicon die damage; below 6 kN increases R_thCH and may cause hot-spotting above 700 A.

Does D950N18TXPSA1 have a specified reverse recovery time (t_rr)?

No - this device is characterized by recovered charge (Q_r) and di/dt-dependent Q_r curves, not t_rr. Infineon intentionally omits t_rr because recovery behavior is highly dependent on circuit conditions (snubber, di/dt, temperature); Q_r provides a more consistent basis for loss and EMI estimation in real-world line-commutated applications.

Can D950N18TXPSA1 be used in single-sided cooling configuration?

Yes, but with significant derating: R_thJC rises to 0.081 °C/W (anode-cooled) or 0.092 °C/W (cathode-cooled), reducing I_FAVM to approximately 520 A at T_C = 100 °C. The datasheet provides separate Z_thJC curves and ∆Z_th corrections for each mode; thermal design must use the appropriate curve set and verify junction temperature does not exceed 180 °C.

Is D950N18TXPSA1 compliant with AEC-Q101 for automotive use?

No - it is qualified per Infineon's industrial press-pack standard (IFBIP-D AEC), not AEC-Q101. While it shares the "AEC" designation in document title, this refers to internal Infineon test methodology alignment with automotive stress levels, not formal AEC-Q101 certification. For automotive traction applications, consult Infineon's certified AEC-Q101 diode portfolio (e.g., IDH09S65C6).