Vishay Siliconix DG213DY-E3

Overview

DG213DY-E3 from Vishay Siliconix is a quad complementary CMOS analog switch with two normally closed (NC) and two normally open (NO) SPST switches, designed for bidirectional signal routing in ±22 V dual-supply or +40 V single-supply systems. It delivers 45 Ω typical on-resistance, 85 ns turn-on time, and 1 pC charge injection - enabling precision sample-and-hold, multiplexing, and instrumentation signal path control.

For engineers reviewing the DG213DY-E3 datasheet, DG213DY-E3 pinout, DG213DY-E3 application, or DG213DY-E3 equivalent, key selection criteria include verified bi-directional analog signal range (±22 V), guaranteed r_DS(on) matching (≤2 Ω), off-isolation >90 dB at 100 kHz, and RoHS-compliant narrow SOIC-16 packaging suitable for high-density industrial PCB layouts.

Technical Context

The DG213DY-E3 implements four independent analog switches fabricated in Vishay's high-voltage silicon gate CMOS process, supporting true bidirectional conduction and supply-level blocking in the off-state. Its internal level-shifting circuitry accepts TTL/CMOS logic inputs (V_INH ≥ 2.4 V, V_INL ≤ 0.8 V) while operating from split supplies (±3 V to ±22 V) or single supplies (+3 V to +40 V).

Each switch features epitaxial latchup protection, 30 mA continuous current rating, and clamped input/output structures that limit analog signals exceeding V+ or V− via internal diodes. The break-before-make timing (15–25 ns) and low 5 pF off-capacitance per channel ensure minimal crosstalk (<−95 dB) and fast settling in multiplexed data acquisition systems.

Key Specifications

Pinout & Package

Package: 16-pin narrow SOIC (JEDEC MS-012, body width 3.9 mm, lead pitch 1.27 mm). RoHS-compliant matte tin lead finish (E3 suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar analog switch applications.

Compared with MAX4617ESE+ and ADG1412BRUZ, the DG213DY-E3 uniquely integrates complementary NC/NO pairs in one SOIC-16 package with ±22 V tolerance - reducing component count and PCB area in dual-supply industrial signal routing where timing coordination and voltage range are primary constraints.

Availability

DG213DY-E3 is available at Aetrix Electronics and suitable for industrial instrumentation, automated test equipment, and communications systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant narrow SOIC packaging.

Supply support for DG213DY-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global semiconductor manufacturer specializing in discrete components and analog ICs, with expertise in high-voltage, high-reliability, and precision analog solutions.

The DG213DY-E3 belongs to Vishay's high-voltage analog switch product line, engineered for signal integrity and robustness in industrial, test, and telecom infrastructure where wide supply range and low distortion are mandatory.

FAQ

What is the maximum analog signal voltage supported by the DG213DY-E3?

The DG213DY-E3 supports analog signals from V− to V+, with absolute maximum ratings of ±22 V across V+ and V−. In dual-supply operation (e.g., V+ = +15 V, V− = −15 V), it handles full-rail signals from −15 V to +15 V. In single-supply mode (V− = GND), it supports 0 V to +40 V. Exceeding these limits risks clamping or damage, as internal diodes limit pins to V+ + 2 V or V− − 2 V.

Does the DG213DY-E3 require separate logic and analog supplies?

Yes - the DG213DY-E3 has dedicated VL (pin 16) for logic interface voltage (typically 5 V) and independent V+ (pin 15) and V− (pin 9) for analog supply rails. This separation allows interfacing with 3.3 V or 5 V microcontrollers while powering analog channels from ±15 V or +24 V supplies. GND (pin 10) serves as the digital reference; analog ground should be star-connected to minimize noise coupling.

How does the complementary switching behavior of the DG213DY-E3 work?

The DG213DY-E3 contains two complementary switch pairs: SW1/SW4 (NC) and SW2/SW3 (NO). When IN1/IN4 = logic high, SW1/SW4 close; simultaneously, IN2/IN3 = logic low keeps SW2/SW3 open - and vice versa. This truth-table-driven behavior enables T-switch, DPDT, and break-before-make topologies without external logic, reducing component count in relay-replacement and signal-routing designs.

Can the DG213DY-E3 be used in single-supply +5 V systems?

No - the DG213DY-E3 requires minimum supply voltages of ±3 V (dual) or +3 V (single). While it operates with +5 V logic (VL = 5 V), its analog rails must meet minimum thresholds: V+ − V− ≥ 6 V in dual mode, or V+ ≥ 3 V with V− = GND in single mode. For true +5 V analog operation, consider lower-voltage alternatives like the DG201A; the DG213DY-E3 is optimized for ±12 V, ±15 V, or +24 V systems.

What is the thermal derating specification for the DG213DY-E3 in narrow SOIC package?

In its narrow SOIC-16 package, the DG213DY-E3 has a power dissipation rating of 640 mW at TA = 25 °C, derating linearly at 7.6 mW/°C above 75 °C. At 100 °C ambient, usable power drops to 640 mW − (100 − 75) × 7.6 mW = 450 mW. Layout best practices include using ≥2 cm² copper pour under the package and minimizing trace length to V+/V− to maintain junction temperature below 150 °C under worst-case 30 mA per channel load.