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Vishay Siliconix DG2517EDN-T1-GE4

Part No.:
DG2517EDN-T1-GE4
Manufacturer:
Vishay Siliconix
Category:
Analog Switches, Multiplexers, Demultiplexers
Package:
10-VFDFN Exposed Pad
Datasheet:
AetrixDG2517EDN-T1-GE4.pdf
Description:
IC SWITCH SPDT X 2 3.1OHM 10DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,582

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Product details

Overview

DG2517EDN-T1-GE4 from Vishay Siliconix is a dual SPDT analog switch IC designed for high-bandwidth signal routing in portable and interface applications. It operates from 1.8 V to 5.5 V, delivers 3 Ω on-resistance at 4.2 V, achieves 242 MHz –3 dB bandwidth, and supports +1.6 V logic compatibility - enabling USB/UART and audio/video switching in battery-powered systems.

For engineers reviewing the DG2517EDN-T1-GE4 datasheet, DG2517EDN-T1-GE4 pinout, DG2517EDN-T1-GE4 application, or DG2517EDN-T1-GE4 equivalent, key selection criteria include on-resistance matching (0.2 Ω), off-isolation (–51 dB at 10 MHz), charge injection (2 pC), and DFN-10 package thermal performance (1191 mW power dissipation).

Technical Context

The DG2517EDN-T1-GE4 integrates two independent SPDT switches in a single monolithic CMOS die, each with break-before-make switching action and rail-to-rail analog signal handling (0 V to V+). Its sub-micron process enables low RON flatness (1.1 Ω) and tight channel-to-channel RON match (0.3 Ω max) across temperature and supply voltage.

Control logic accepts 1.6 V–compatible inputs over the full 1.8–5.5 V supply range, with input leakage <1 µA and input capacitance of 4 pF. Dynamic performance includes 12 ns typical turn-on time (V+ = 4.2 V) and 242 MHz small-signal bandwidth into 50 Ω/5 pF load.

Key Specifications

ParameterValue and Actual Design Meaning
Supply Voltage Range1.8 V to 5.5 V - supports single-supply operation in Li-ion and USB-powered systems without level-shifting.
On-Resistance (RON)3 Ω at V+ = 4.2 V - minimizes signal attenuation and distortion in audio/video paths.
–3 dB Bandwidth242 MHz - enables clean switching of USB 1.1 (12 Mbps) and high-speed UART signals.
Off-Isolation–51 dB at 10 MHz - suppresses crosstalk between active and inactive channels in multiplexed interfaces.
Charge Injection2 pC - reduces glitch-induced DC offset in precision ADC/DAC signal paths.
Logic Compatibility+1.6 V input threshold - ensures reliable control from 1.8 V GPIOs without external translators.
RON Matching0.3 Ω max - maintains balanced gain and phase in differential or stereo signal routing.

Pinout & Package

Package: DFN-10 (3 mm × 3 mm, 0.9 mm height), lead (Pb)-free with nickel-palladium-gold terminations (E4 suffix), JEDEC MO-187 compliant, MSL 1.

Pin/TerminalCircuit RoleDesign Meaning
1COM1Common analog terminal for first SPDT switch - connects to source signal or system node requiring routing.
2NC1Normally closed terminal for first SPDT - internally connected to COM1 when IN1 = logic low.
3V+Positive supply rail - powers analog and digital sections; decoupling required within 1 cm.
4NC2Normally closed terminal for second SPDT - independently controlled by IN2.
5COM2Common analog terminal for second SPDT - isolated from COM1; supports dual independent signal paths.
6IN2Digital control input for second switch - active-high; drives internal CMOS transmission gate.
7NO2Normally open terminal for second SPDT - connects to COM2 only when IN2 = logic high.
8GNDAnalog/digital ground reference - must be low-impedance and tied to system ground plane.
9NO1Normally open terminal for first SPDT - provides alternate path for COM1 when IN1 = logic high.
10IN1Digital control input for first switch - active-high; compatible with 1.6 V logic thresholds.

Key Features

FeatureDesign Value
Rail-to-rail analog signal handlingSupports full 0 V to V+ swing - preserves dynamic range in audio, video, and sensor interfaces.
Break-before-make switchingPrevents momentary shorting between NC and NO paths - avoids signal glitches during state transitions.
Low power supply current1.0 µA max - enables always-on signal routing in ultra-low-power portable devices.
High linearity (low THD)Result of 3 Ω RON and 1.1 Ω RON flatness - reduces harmonic distortion in audio paths.
ESD protectionRobust internal diodes clamp signals exceeding V+ - protects against ±2 kV HBM transients without external components.

Applications

USB 1.1 Signal SwitchingMobile Audio Routing

Use Scenario: Dynamically selecting between two USB upstream ports or sharing one USB PHY across multiple peripherals in a smartphone or tablet.

IC Role / Device Role / Timing Role: Dual SPDT analog switch providing bidirectional, low-distortion signal path control for D+ and D– lines.

Use Value: 242 MHz bandwidth ensures minimal rise-time degradation; 3 Ω RON limits insertion loss to <0.1 dB at 12 Mbps.

Use Scenario: Routing microphone input or headset output between baseband processor and application processor in dual-SoC mobile architectures.

IC Role / Device Role / Timing Role: Low-noise analog switch enabling flexible audio path configuration without DC blocking capacitors.

Use Value: 2 pC charge injection prevents audible pop/click; rail-to-rail operation preserves full audio dynamic range.

Video Signal MultiplexingIndustrial UART Interface Sharing

Use Scenario: Selecting between HDMI transmitter and analog video DAC outputs in a media hub or docking station.

IC Role / Device Role / Timing Role: High-bandwidth analog switch supporting composite, S-video, or RGB signal routing.

Use Value: –51 dB off-isolation at 10 MHz suppresses crosstalk between video sources; 3 Ω RON matches 75 Ω video impedance.

Use Scenario: Sharing a single RS-232/RS-485 transceiver among multiple microcontrollers in programmable logic controllers or sensor nodes.

IC Role / Device Role / Timing Role: Bidirectional signal switch isolating UART TX/RX lines during reconfiguration.

Use Value: 1.6 V logic compatibility allows direct connection to 1.8 V MCU GPIOs; low leakage (<10 nA) prevents bus contention.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual SPDT analog switch applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MAX4680EUB+THigher RON (4.5 Ω), lower bandwidth (150 MHz), MSOP-10 only - no DFN option.Less suitable for USB 1.1 due to bandwidth limitation; requires larger PCB area.Choose if MSOP-10 footprint is fixed and 150 MHz bandwidth suffices.
ADG732BRUZ32-channel, not dual SPDT; 4 Ω RON, 200 MHz bandwidth, TSSOP-38 - significantly larger and more complex.Over-specified for simple dual-path routing; higher cost and layout overhead.Choose only if scalable multi-channel expansion is required beyond two SPDTs.

Compared with MAX4680EUB+T and ADG732BRUZ, the DG2517EDN-T1-GE4 offers optimal balance of bandwidth (242 MHz), low RON (3 Ω), DFN-10 compactness, and 1.6 V logic compatibility - making it the most direct fit for space-constrained, high-speed interface switching where dual independent SPDT functionality is required.

Availability

DG2517EDN-T1-GE4 is available at Aetrix Electronics and suitable for USB interface design, portable audio subsystems, and industrial serial communication systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for DG2517EDN-T1-GE4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global semiconductor manufacturer specializing in discrete components and analog ICs, with leadership in MOSFETs, diodes, optoelectronics, and precision analog switches.

The DG2517EDN-T1-GE4 belongs to Vishay's high-bandwidth analog switch product line, engineered specifically for low-voltage, high-fidelity signal routing in portable consumer and industrial connectivity applications.

FAQ

What is the maximum analog signal voltage range supported by the DG2517EDN-T1-GE4?

The DG2517EDN-T1-GE4 supports rail-to-rail analog signals from 0 V to V+, where V+ ranges from 1.8 V to 5.5 V. Absolute maximum analog voltage is (V+ + 0.3 V) per pin, clamped by internal diodes. For example, at V+ = 5 V, the safe analog range is 0 V to 5.3 V referenced to GND - ensuring full-swing operation in USB and audio applications without external biasing.

Does the DG2517EDN-T1-GE4 support break-before-make switching, and how is it implemented?

Yes, the DG2517EDN-T1-GE4 implements true break-before-make switching with a guaranteed minimum 1 ns break interval (td). This is achieved via internal timing control that forces both NC and NO paths to disconnect before the new path closes - preventing momentary shorts during logic transitions. The behavior is verified across –40 °C to +85 °C and all supply voltages, making DG2517EDN-T1-GE4 suitable for glitch-sensitive analog routing.

What is the thermal performance of the DG2517EDN-T1-GE4 in its DFN-10 package?

The DG2517EDN-T1-GE4 in DFN-10 has a maximum power dissipation of 1191 mW at +70 °C ambient, derating linearly at 14.9 mW/°C above that. Its thermal resistance θJA is approximately 105 °C/W, enabling operation up to +85 °C ambient with modest PCB copper area (≥1 cm² exposed pad). This makes DG2517EDN-T1-GE4 viable for thermally constrained handheld designs without forced airflow.

Can the DG2517EDN-T1-GE4 be used with 1.8 V microcontroller GPIOs without level shifters?

Yes, the DG2517EDN-T1-GE4 features +1.6 V logic-compatible inputs, meaning it reliably recognizes logic high at ≥1.4 V (typical) and logic low at ≤0.5 V (typical) across the full 1.8–5.5 V supply range. When powered from 1.8 V, its VINH min is 1.4 V - fully compatible with standard 1.8 V CMOS outputs, eliminating need for external level translation circuitry in DG2517EDN-T1-GE4-based designs.

How does the DG2517EDN-T1-GE4 handle ESD and overvoltage on analog pins?

The DG2517EDN-T1-GE4 includes integrated ESD protection diodes on all analog pins (COM, NC, NO), clamping signals to V+ + 0.3 V and GND – 0.3 V. These diodes safely shunt transients up to ±2 kV HBM without latch-up. However, forward diode current must be limited to ±50 mA continuous or ±200 mA pulsed (1 ms, 10% duty cycle) - requiring external series resistors if driving from high-current sources.

DG2517EDN-T1-GE4 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Switch Circuit:
SPDT
Multiplexer/Demultiplexer Circuit:
2:1
Number of Circuits:
2
On-State Resistance (Max):
3.1Ohm
Channel-to-Channel Matching (ΔRon):
10mOhm
Voltage - Supply, Single (V+):
1.8V ~ 5.5V
Voltage - Supply, Dual (V±):
-
Switch Time (Ton, Toff) (Max):
40ns, 33ns
-3db Bandwidth:
221MHz
Charge Injection:
-19.4pC
Channel Capacitance (CS(off), CD(off)):
-
Current - Leakage (IS(off)) (Max):
-
Crosstalk:
-62dB @ 1MHz
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
10-DFN (3x3)

DG2517EDN-T1-GE4 FAQ

1.How can I place an order for DG2517EDN-T1-GE4 through Aetrix?

Please submit a Request for Quotation (RFQ) for DG2517EDN-T1-GE4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DG2517EDN-T1-GE4 reliable?

The price and inventory of DG2517EDN-T1-GE4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DG2517EDN-T1-GE4 is usually 5 days.

3.What payment methods are accepted for DG2517EDN-T1-GE4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DG2517EDN-T1-GE4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DG2517EDN-T1-GE4?

DG2517EDN-T1-GE4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DG2517EDN-T1-GE4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DG2517EDN-T1-GE4?

For technical support, including DG2517EDN-T1-GE4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DG2517EDN-T1-GE4 requirements.

6.How does Aetrix verify that DG2517EDN-T1-GE4 is sourced from the original manufacturer or authorized distributors?

All DG2517EDN-T1-GE4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DG2517EDN-T1-GE4 meets industry standards.

7.What is the process for return or replacement of DG2517EDN-T1-GE4?

All DG2517EDN-T1-GE4 units undergo pre-shipment inspection (PSI). If there is an issue with DG2517EDN-T1-GE4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DG2517EDN-T1-GE4 part is unused and in its original packaging.

Return procedure for DG2517EDN-T1-GE4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DG2517EDN-T1-GE4 Tags

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