Vishay Siliconix DG307BDJ

Overview

DG307BDJ from Vishay Siliconix is a monolithic CMOS analog switch configured as a dual SPDT (break-before-make) device with four independent SPST switches per package, ±15 V analog signal range, 30 Ω typical R_DS(on), and 110 ns turn-on time. It operates from dual supplies (±15 V), supports CMOS logic-level control (0 V/11 V thresholds), and is designed for precision instrumentation amplifier gain/switching networks.

For engineers reviewing the DG307BDJ datasheet, DG307BDJ pinout, DG307BDJ application, or DG307BDJ equivalent, this part is selected for rail-to-rail analog switching in low-power, battery-operated systems requiring guaranteed break-before-make timing, low charge injection (30 pC), and high off-isolation (62 dB) at 500 kHz.

Technical Context

The DG307BDJ implements a dual SPDT architecture with internal break-before-make timing (50 ns t_OPEN) to prevent signal shorting during state transitions. Its PLUS-40 CMOS process enables micropower operation (30 nW quiescent) while maintaining fast switching (t_ON = 110 ns, t_OFF = 70 ns) and flat on-resistance across the full ±15 V analog range.

Each channel conducts bidirectionally with matched R_DS(on) (30–75 Ω), exhibits ultra-low leakage (±0.1 nA off-state), and integrates input protection diodes clamping signals to V+ and V− rails. Logic inputs accept 0 V/11 V thresholds compatible with TTL and CMOS, and single-supply operation is supported by grounding V−.

Key Specifications

Pinout & Package

Package: 14-pin plastic DIP (0.300" wide), JEDEC MS-001 compliant, body dimensions 19.30 mm × 8.26 mm × 3.81 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar analog switch applications.

Compared with MAX4677ESE+ and ADG1419BRUZ, the DG307BDJ uniquely balances ±15 V rail-to-rail operation, guaranteed break-before-make timing, and micropower consumption-making it optimal for battery-powered instrumentation where bipolar signal integrity and low standby current are jointly essential.

Availability

DG307BDJ is available at Aetrix Electronics and suitable for programmable gain amplifiers, instrumentation amplifier input selection, battery-powered data loggers, and process control signal multiplexers requiring stable component supply across industrial temperature ranges (−40 °C to +85 °C).

Supply support for DG307BDJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global semiconductor manufacturer specializing in discrete components and analog ICs, with leadership in power MOSFETs, diodes, optoelectronics, and precision analog switches.

The DG307BDJ belongs to the DG30xB series of CMOS analog switches engineered for high-fidelity signal routing in communications, test equipment, and process control-where low distortion, rail-to-rail operation, and latch-up immunity are mandatory.

FAQ

What is the maximum analog signal voltage range supported by the DG307BDJ?

The DG307BDJ supports a full ±15 V analog signal range when operated with V+ = +15 V and V− = −15 V. Signals on S or D pins exceeding these rails are clamped by internal diodes, and forward diode current must be limited to 30 mA. This range enables direct interfacing with industrial sensors and bipolar op-amp outputs without external level-shifting circuitry.

Does the DG307BDJ require both positive and negative supplies to function?

Yes-the DG307BDJ requires dual supplies (V+ and V−) to achieve its specified ±15 V analog signal range and guaranteed break-before-make timing. However, single-supply operation is possible by connecting V− to GND, limiting the analog range to 0 V to V+. In that configuration, the DG307BDJ still maintains CMOS logic compatibility and low R_DS(on), but loses bipolar signal capability.

How does the break-before-make feature of the DG307BDJ improve system reliability?

The DG307BDJ guarantees a minimum 50 ns break-before-make interval between SPDT switching transitions. This prevents momentary short-circuits between analog signal paths-critical in programmable gain amplifiers and multiplexed sensor interfaces where overlapping conduction could cause output glitches, op-amp saturation, or damage to downstream circuitry. The feature is inherent to the silicon design and requires no external timing control.

What is the typical charge injection value for the DG307BDJ, and why does it matter?

The DG307BDJ specifies 30 pC typical charge injection. This parameter quantifies the net charge injected onto the analog path during switching transitions. In sample-and-hold circuits or programmable gain amplifiers, excessive charge injection causes voltage steps and settling errors. At 30 pC, the DG307BDJ minimizes such errors-especially when driving capacitive loads like ADC input sampling capacitors or op-amp feedback networks.

Can the DG307BDJ be used with standard 3.3 V or 5 V microcontrollers?

Yes-the DG307BDJ accepts CMOS logic inputs with thresholds of ≤3.5 V for logic low and ≥11 V for logic high. While 5 V microcontrollers meet the low-threshold requirement, their 5 V logic high falls below the 11 V minimum needed for reliable turn-on. Therefore, a level shifter or open-drain buffer with pull-up to ≥11 V is required for full compatibility. Direct connection to 3.3 V MCUs is not recommended without translation.