Vishay Siliconix DG308BDQ-T1

Overview

DG308BDQ-T1 from Vishay Siliconix is a quad SPST normally-open analog switch IC designed for precision signal routing in ±15 V dual-supply or 12 V single-supply systems. It delivers 45 Ω typical on-resistance, <200 ns turn-on time, 1 pC charge injection, ±22 V analog signal range, and 90 dB off-isolation at 100 kHz - enabling high-fidelity switching in sample-and-hold circuits and programmable gain amplifiers.

For engineers reviewing the DG308BDQ-T1 datasheet, DG308BDQ-T1 pinout, DG308BDQ-T1 application, or DG308BDQ-T1 equivalent, key selection criteria include guaranteed R_DS(on) matching (≤2 %), low leakage (±20 pA at ±14 V), bi-directional signal handling, latchup immunity via epitaxial layer, and TSSOP-16 package compatibility with space-constrained industrial instrumentation layouts.

Technical Context

The DG308BDQ-T1 integrates four independent CMOS transmission gates fabricated in Vishay's silicon-gate process, supporting true bi-directional analog conduction when enabled and blocking to supply rails when disabled. Its internal level-shifting drive circuit accepts TTL/CMOS-compatible logic inputs (V_INH ≥ 11 V, V_INL ≤ 3.5 V) across –40 °C to +85 °C.

Charge injection compensation minimizes transient glitches during switching, critical for precision sample-and-hold accuracy. The device features integrated clamping diodes limiting analog signals exceeding V+ or V–, and an epitaxial isolation structure preventing latchup under overvoltage conditions.

Key Specifications

Pinout & Package

TSSOP-16 package (JEDEC MO-153, 5.0 mm × 4.4 mm × 1.2 mm height), lead-free per RoHS, with exposed pad not electrically connected.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar analog switch applications.

Compared with MAX4617ESE+ and ADG1404BRUZ, the DG308BDQ-T1 uniquely balances ±22 V tolerance, 1 pC charge injection, and proven latchup immunity - making it the preferred choice for industrial-grade sample-and-hold and programmable gain circuits where signal fidelity and robustness are co-prioritized.

Availability

DG308BDQ-T1 is available at Aetrix Electronics and suitable for industrial instrumentation, automated test equipment, and communications systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DG308BDQ-T1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global semiconductor manufacturer specializing in discrete components and analog ICs, with core expertise in power management, sensing, and signal conditioning technologies.

The DG308B series belongs to Vishay's precision analog switch product line, engineered specifically for high-accuracy instrumentation, test equipment, and industrial control systems demanding low leakage, low glitch, and wide supply voltage operation.

FAQ

What is the maximum analog signal voltage the DG308BDQ-T1 can safely switch?

The DG308BDQ-T1 supports analog signals from V– – 2 V to V+ + 2 V, enabling ±22 V operation when powered with ±22 V supplies. This rating is enforced by internal clamping diodes; forward current must be limited to 30 mA per terminal to avoid damage. At ±15 V supplies, the usable analog range is ±15 V, verified across –40 °C to +85 °C.

Does the DG308BDQ-T1 require external pull-up or pull-down resistors on its digital inputs?

No, the DG308BDQ-T1 does not require external biasing on IN1–IN4. Its CMOS-compatible inputs draw only ±1 µA max. over temperature and recognize logic high at ≥11 V and logic low at ≤3.5 V. Direct connection to TTL or CMOS outputs is sufficient; adding pull resistors may degrade switching speed or increase power consumption unnecessarily.

How does the DG308BDQ-T1 achieve latchup immunity?

The DG308BDQ-T1 achieves latchup immunity through an epitaxial layer isolation structure in its silicon-gate CMOS process. This design prevents parasitic SCR formation between P- and N-type regions, allowing the device to withstand analog signal overvoltages up to ±22 V without destructive latchup - a critical reliability feature confirmed in Vishay's qualification testing per JESD22-A114.

Can the DG308BDQ-T1 operate from a single 5 V supply?

No, the DG308BDQ-T1 cannot operate reliably from a single 5 V supply. Its minimum continuous operating supply is ±4 V (i.e., V+ = +4 V, V– = –4 V) or 4 V to 44 V in single-supply mode. At 5 V single supply, the logic threshold (11 V high / 3.5 V low) cannot be met, and analog range collapses to 0–5 V with degraded R_DS(on) (160 Ω min.) - violating functional specifications in the datasheet.

What is the thermal derating behavior of the DG308BDQ-T1 in TSSOP-16 package?

In the TSSOP-16 package, the DG308BDQ-T1 has a power dissipation limit of 640 mW at ≤75 °C ambient. Above 75 °C, power must be linearly derated at 7.6 mW/°C - meaning maximum allowable power drops to 542 mW at 88 °C and 444 mW at 101 °C. This derating ensures junction temperature remains within safe limits under sustained load conditions.