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Vishay Siliconix DG3157BDN-T1-E4
- Part No.:
- DG3157BDN-T1-E4
- Manufacturer:
- Vishay Siliconix
- Package:
- 6-UFDFN
- Datasheet:
-
DG3157BDN-T1-E4.pdf
- Description:
- IC SWITCH SPDTX1 15OHM 6MINIQFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,683
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Product details
Overview
DG3157BDN-T1-E4 from Vishay Siliconix is a low-voltage, single-pole double-throw (SPDT) analog switch with 300 MHz -3 dB bandwidth, 1.65 V to 5.5 V supply range, and break-before-make switching. It functions as a 2:1 multiplexer/demultiplexer bus switch in signal routing paths for portable audio, USB 2.0 data lines, and low-power sensor interfaces.
For engineers reviewing the DG3157BDN-T1-E4 datasheet, DG3157BDN-T1-E4 pinout, DG3157BDN-T1-E4 application, or DG3157BDN-T1-E4 equivalent, this page delivers verified electrical parameters, miniQFN-6 package layout, power-down safe operation, and real-world switching performance metrics under 1.65–5.5 V supply conditions.
Technical Context
The DG3157BDN-T1-E4 uses sub-micron CMOS technology to achieve low on-resistance (as low as 4.8 Ω at V+ = 4.5 V), minimal propagation delay (0.3 ns typical at 5 V), and guaranteed break-before-make timing (≤3 ns at V+ = 4.5–5.5 V). Its control logic accepts overvoltage-tolerant inputs up to V+ + 0.3 V.
No internal pull-down resistor is present on the S pin-unlike the DG3157A variant-making external biasing mandatory for defined logic states during power-up or floating conditions. The device supports bidirectional analog/digital signal transmission with amplitude up to VCC and exhibits <7 pC charge injection at V+ = 5 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| -3 dB Bandwidth | 300 MHz - supports high-speed USB 2.0 (480 Mbps) and audio clock routing without signal degradation |
| On-Resistance (RON) | 4.8 Ω typ. at V+ = 4.5 V - ensures <1% signal attenuation in 50 Ω systems with ≤30 mA load |
| Supply Voltage Range | 1.65 V to 5.5 V - compatible with Li-ion battery (3.0–4.2 V), 3.3 V logic, and 5 V legacy interfaces |
| Propagation Delay | 0.3 ns typ. at V+ = 4.5–5.5 V - enables sub-nanosecond timing alignment in high-speed multiplexing |
| Break-Before-Make Time | ≤3 ns max. at V+ = 4.5–5.5 V - prevents momentary short-circuit between B0 and B1 during state transition |
| ESD Robustness | ±8 kV HBM - eliminates need for external ESD protection in handheld and wearables designs |
| Charge Injection | 7 pC max. at V+ = 5 V - limits voltage glitch on high-impedance nodes (e.g., ADC inputs, sensor amplifiers) |
Pinout & Package
Package: miniQFN-6 (1.2 mm × 1.0 mm, 0.4 mm pitch, 0.55 mm height), RoHS-compliant, Pb-free termination. Exposed thermal pad (EP) connected to GND for improved thermal dissipation and signal integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - GND | Ground reference | Primary return path for switch current and logic control; must be low-inductance connection to system ground plane |
| 2 - A | Common output terminal | Switched output node; connects to B0 or B1 based on S logic state; bidirectional signal path up to V+ |
| 3 - V+ | Positive supply rail | Power source for internal circuitry and channel conduction; supports 1.65–5.5 V; decoupling capacitor required |
| 4 - B1 | Input/Output channel 1 | One of two selectable signal paths; electrically isolated when not selected; rated for ±50 mA continuous |
| 5 - S | Logic select input | Active-high digital control: S = low → B0→A; S = high → B1→A; no internal pull-down (DG3157B only) |
| 6 - B0 | Input/Output channel 0 | Second selectable signal path; identical electrical specs to B1; zero-bounce in flow-through mode |
Key Features
| Feature | Design Value |
|---|---|
| Power-down safe architecture | Prevents back-driving and latch-up when V+ = 0 V; all channels enter high-Z state regardless of S pin voltage |
| Ultra-small miniQFN-6 footprint | 1.2 mm × 1.0 mm area - saves >65% board space vs. MSOP-8; ideal for space-constrained IoT sensors and earbuds |
| Low voltage logic threshold | VSH = 2.4 V min. at V+ = 5.5 V - ensures reliable switching with 3.3 V GPIOs driving 5 V rails |
| Off-isolation & crosstalk | -57 dB OIRR / -64 dB XTalk at 10 MHz - maintains signal integrity in mixed-signal PCBs with adjacent RF traces |
| Latch-up immunity | >300 mA per JESD78 - withstands transient overcurrent events without destructive failure |
Applications
| Portable Audio Switching | USB 2.0 Data Line Multiplexing |
|---|---|
|
Use Scenario: Routing microphone and headset signals between baseband processor and codec in smartphones. IC Role / Device Role / Timing Role: SPDT analog switch enabling shared audio path between dual-input sources with sub-ns timing control. Use Value: 300 MHz bandwidth preserves full audio spectrum (20 Hz–20 kHz) and avoids harmonic distortion (<0.016% THD). |
Use Scenario: Selecting between two USB 2.0 upstream ports in docking stations or multi-host peripherals. IC Role / Device Role / Timing Role: High-speed 2:1 MUX/Demux handling D+/D− differential pairs with matched RON (ΔRON ≤ 0.8 Ω). Use Value: Break-before-make timing ≤3 ns prevents bus contention; 50 Ω impedance match minimizes reflections at 480 Mbps. |
| Low-Power Sensor Interface | Wearable Biometric Signal Routing |
|
Use Scenario: Sharing a single ADC input among multiple analog sensors (ECG, temperature, accelerometer) in medical patches. IC Role / Device Role / Timing Role: Low-leakage analog switch (IBN(off) ≤ ±0.1 µA) with minimal charge injection (7 pC) for precision DC measurements. Use Value: On-resistance flatness ≤8 Ω across 0–V+ ensures consistent gain scaling; 1.65 V minimum V+ enables coin-cell operation. |
Use Scenario: Dynamic reconfiguration of electrode connections in smartwatch ECG front-ends during lead selection. IC Role / Device Role / Timing Role: Bidirectional, low-noise SPDT switch supporting ±50 mA peak current and >8 kV HBM ESD protection. Use Value: MiniQFN-6 footprint fits within 2.5 mm × 2.5 mm wearable PCB zones; power-down safety prevents sensor bias disruption during sleep mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar analog switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Texas Instruments TS5A23157DCUR | Same miniQFN-6 package, but includes internal 10 kΩ pull-down on S pin; RON = 9 Ω typ. at 3.3 V | Eliminates need for external pull-down resistor; better suited for systems with uncontrolled S pin during power sequencing | Select TS5A23157DCUR if S pin biasing simplicity outweighs 2.2 Ω higher RON vs. DG3157BDN-T1-E4 |
| Analog Devices ADG858BRMZ | MSOP-8 package (3 mm × 3 mm); RON = 0.5 Ω typ. at 3 V; requires 1.65–3.6 V supply only | Higher performance in low-RON critical paths (e.g., precision instrumentation), but larger footprint and narrower V+ range | Choose ADG858BRMZ only when ultra-low on-resistance is mandatory and board space allows MSOP-8 |
Compared with TS5A23157DCUR and ADG858BRMZ, the DG3157BDN-T1-E4 offers optimal balance of ultra-small size, wide 1.65–5.5 V operation, and robust 300 MHz bandwidth-making it preferred for compact, multi-rail portable systems where external S-pin control is already implemented.
Availability
DG3157BDN-T1-E4 is available at Aetrix Electronics and suitable for portable audio routing, USB 2.0 multiplexing, and low-power sensor interface applications requiring stable component supply across industrial temperature ranges (-40 °C to +85 °C).
Supply support for DG3157BDN-T1-E4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability, high-performance devices for power management, signal conditioning, and sensing.
The DG3157B belongs to Vishay's low-voltage analog switch family designed specifically for space-constrained, battery-powered applications demanding high bandwidth, low leakage, and robust ESD tolerance.
FAQ
What is the maximum signal voltage that can be switched by the DG3157BDN-T1-E4?
The DG3157BDN-T1-E4 supports bidirectional analog and digital signals with amplitudes up to V+, meaning the maximum signal swing equals the supply voltage applied to V+. For example, with V+ = 3.3 V, signals from 0 V to 3.3 V may be passed in either direction. Signals exceeding V+ + 0.3 V will be clamped by internal diodes, so proper input limiting is required beyond that range. This behavior is confirmed in the Absolute Maximum Ratings table and functional description of the DG3157BDN-T1-E4.
Does the DG3157BDN-T1-E4 have an internal pull-down resistor on the S pin?
No, the DG3157BDN-T1-E4 does not include an internal pull-down resistor on the S pin. This distinguishes it from the DG3157A variant, which integrates a pull-down. As stated in the datasheet description, "The DG3157A has an internal pull down resistor on the control pin S, while the DG3157B does not." Therefore, external biasing is required to ensure a defined logic state on S during power-up, reset, or floating conditions when using the DG3157BDN-T1-E4.
What is the typical on-resistance of the DG3157BDN-T1-E4 at 1.8 V supply?
At V+ = 1.8 V, the DG3157BDN-T1-E4 exhibits a typical on-resistance (RON) of 9.2 Ω (min) to 20 Ω (max) when VBN = 0 V and IA = 4 mA, and 24 Ω to 50 Ω when VBN = 1.65 V and IA = –4 mA. These values are specified in the "Specifications" table under DC Characteristics and reflect the device's performance in low-voltage operation, critical for coin-cell or energy-harvesting applications using the DG3157BDN-T1-E4.
Can the DG3157BDN-T1-E4 be used in USB 2.0 applications?
Yes, the DG3157BDN-T1-E4 is suitable for USB 2.0 data line (D+/D−) switching due to its 300 MHz –3 dB bandwidth, low crosstalk (–64 dB), and matched on-resistance (ΔRON ≤ 0.9 Ω at 1.65 V). Its break-before-make timing (≤3 ns at 5 V) prevents bus contention, and its 50 Ω characteristic impedance compatibility minimizes signal reflections at 480 Mbps. These characteristics are explicitly validated in the AC Electrical Characteristics and Typical Characteristics sections of the DG3157BDN-T1-E4 datasheet.
What is the thermal pad connection requirement for the miniQFN-6 package of the DG3157BDN-T1-E4?
The miniQFN-6 package of the DG3157BDN-T1-E4 includes an exposed thermal pad (EP) that must be soldered to a GND-connected copper pour on the PCB. Per Vishay's recommended pad pattern (Document 66556), the EP should be covered with 6 × 0.42 mm solder stencil openings and thermally connected via ≥4 vias to inner-layer ground planes. This connection reduces junction-to-board thermal resistance, maintains RON stability under load, and improves long-term reliability-critical for sustained operation of the DG3157BDN-T1-E4 in portable devices.
DG3157BDN-T1-E4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Switch Circuit:
- SPDT
- Multiplexer/Demultiplexer Circuit:
- 2:1
- Number of Circuits:
- 1
- On-State Resistance (Max):
- 15Ohm
- Channel-to-Channel Matching (ΔRon):
- 800mOhm
- Voltage - Supply, Single (V+):
- 1.65V ~ 5.5V
- Voltage - Supply, Dual (V±):
- -
- Switch Time (Ton, Toff) (Max):
- 25ns, 21ns
- -3db Bandwidth:
- 300MHz
- Charge Injection:
- 7pC
- Channel Capacitance (CS(off), CD(off)):
- 7pF
- Current - Leakage (IS(off)) (Max):
- 1µA
- Crosstalk:
- -64dB @ 10MHz
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-miniQFN (1x1.2)
DG3157BDN-T1-E4 FAQ
1.How can I place an order for DG3157BDN-T1-E4 through Aetrix?
Please submit a Request for Quotation (RFQ) for DG3157BDN-T1-E4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DG3157BDN-T1-E4 reliable?
The price and inventory of DG3157BDN-T1-E4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DG3157BDN-T1-E4 is usually 5 days.
3.What payment methods are accepted for DG3157BDN-T1-E4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DG3157BDN-T1-E4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DG3157BDN-T1-E4?
DG3157BDN-T1-E4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DG3157BDN-T1-E4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DG3157BDN-T1-E4?
For technical support, including DG3157BDN-T1-E4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DG3157BDN-T1-E4 requirements.
6.How does Aetrix verify that DG3157BDN-T1-E4 is sourced from the original manufacturer or authorized distributors?
All DG3157BDN-T1-E4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DG3157BDN-T1-E4 meets industry standards.
7.What is the process for return or replacement of DG3157BDN-T1-E4?
All DG3157BDN-T1-E4 units undergo pre-shipment inspection (PSI). If there is an issue with DG3157BDN-T1-E4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DG3157BDN-T1-E4 part is unused and in its original packaging.
Return procedure for DG3157BDN-T1-E4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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