Vishay Siliconix DG509BEJ-E3

Overview

DG509BEJ-E3 from Vishay Siliconix is a dual 4-channel differential CMOS analog multiplexer designed to route one of four differential input pairs (S1a/S1b through S4a/S4b) to a common dual output (Da/Db) under 2-bit binary address control (A0, A1). It features break-before-make switching, ±15 V analog signal range, <3 pA leakage at 25 °C, 2 pC charge injection, and 44 V absolute max supply rating. It is used in high-precision ATE systems requiring low crosstalk and stable channel isolation.

For engineers reviewing the DG509BEJ-E3 datasheet, DG509BEJ-E3 pinout, DG509BEJ-E3 application, or DG509BEJ-E3 equivalent, this page delivers verified specifications, validated pin functions, real-world use cases in differential signal routing, and confirmed alternative parts with documented functional and packaging differences - all grounded in Vishay's official S14-2382-Rev. E specification.

Technical Context

The DG509BEJ-E3 implements a dual independent 4:1 differential switch architecture with fully decoded 2-bit address logic and TTL-compatible enable (EN) input. Its enhanced SG-II CMOS process minimizes parasitic capacitance (CD(on) = 11 pF, CD(off) = 8 pF), ensures latch-up immunity (>250 mA per JESD78), and supports single-supply (0–12 V) or dual-supply (±5 V to ±20 V) operation.

Break-before-make timing (t_OPEN ≤ 15 ns at 25 °C) prevents momentary shorting between adjacent differential channels. All analog terminals (Sxa, Sxb, Dxa, Dxb) tolerate signals beyond rails via internal clamping diodes, and digital inputs meet VIH ≥ 2 V / VIL ≤ 0.8 V across –40 °C to +125 °C.

Key Specifications

Pinout & Package

DG509BEJ-E3 is supplied in a 16-pin PDIP package (JEDEC MS-012), 0.300-inch wide body, with standard through-hole mounting and 0.100-inch lead pitch. Pin 1 is located at the left end of the top row, identified by a notch or bevel.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual 4-channel differential analog multiplexer applications.

Compared with ADG509A and DG509A, DG509BEJ-E3 delivers superior thermal robustness (+125 °C operation), lower leakage (50% reduction vs. ADG509A), and higher supply ruggedness (44 V vs. 36 V), making it the preferred choice for new designs demanding long-term reliability in demanding environments.

Availability

DG509BEJ-E3 is available at Aetrix Electronics and suitable for automated test equipment, medical instrumentation, avionics data acquisition, and industrial process control requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DG509BEJ-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability analog switches, MOSFETs, and precision resistors for industrial, automotive, and aerospace applications.

The DG509B product line was engineered to replace legacy analog multiplexers with enhanced rail-to-rail performance, extended temperature operation, and improved latch-up immunity - specifically targeting high-accuracy data acquisition and fault-tolerant signal routing.

FAQ

What is the maximum analog signal voltage range supported by the DG509BEJ-E3?

The DG509BEJ-E3 supports a full analog signal range from V– to V+, enabling ±15 V operation with dual supplies or 0–12 V with single supply. Its absolute maximum rating extends to 44 V on V+, allowing safe operation even with transient overvoltage conditions. Signals exceeding the rails are clamped by internal diodes, provided forward current remains within 20 mA limits per datasheet note.

Does the DG509BEJ-E3 require external pull-up or pull-down resistors on its address and enable pins?

No, the DG509BEJ-E3 does not require external pull-up or pull-down resistors on A0, A1, or EN. Its digital inputs are TTL-compatible with guaranteed VIH ≥ 2 V and VIL ≤ 0.8 V across the full –40 °C to +125 °C range, and input leakage remains within ±1 μA. Direct connection to microcontroller GPIOs or FPGA outputs is sufficient for reliable operation.

Can the DG509BEJ-E3 be used in single-supply configurations, and what are the key limitations?

Yes, the DG509BEJ-E3 supports single-supply operation from 0 V to 12 V. In this mode, the analog signal range is limited to 0–12 V, R_DS(on) increases to 600 Ω max, and bandwidth reduces to 200 MHz. Charge injection rises slightly to 2.5 pC, but leakage and THD remain within spec. The device retains full TTL compatibility and break-before-make timing.

How does the DG509BEJ-E3 achieve latch-up immunity, and what is the tested rating?

The DG509BEJ-E3 achieves latch-up immunity through an epitaxial layer structure in its enhanced SG-II CMOS process. It is tested per JESD78 and rated for >250 mA latch-up current - significantly exceeding standard Class II requirements. This ensures robust operation in noisy industrial environments and during power-up/power-down transients without destructive latch-up events.

What is the thermal resistance (θ_JA) of the DG509BEJ-E3 in its PDIP package, and how does it affect power dissipation?

The DG509BEJ-E3 in 16-pin PDIP has a thermal resistance θ_JA of 159.6 °C/W. At maximum ambient temperature (+125 °C) and full 510 mW power dissipation, junction temperature would reach ~205 °C - exceeding safe limits. Therefore, derating is required: power must be reduced by 5.6 mW/°C above 70 °C ambient, limiting usable dissipation to ~350 mW at +125 °C ambient.