Vishay Siliconix DG613DY

Overview

DG613DY from Vishay Siliconix is a high-speed, low-glitch quad analog switch IC with two normally open (NO) and two normally closed (NC) SPST switches in a 16-pin narrow SOIC package. It features 12 ns turn-on time, 18 Ω on-resistance, ±2 pC charge injection, 500 MHz bandwidth, and operates from ±5 V to ±10.5 V dual supplies or 5–21 V single supply. It is used in pixel-rate video switching and DAC deglitching where fast, clean signal routing is critical.

For engineers reviewing the DG613DY datasheet, DG613DY pinout, DG613DY application, or DG613DY equivalent, key selection criteria include guaranteed 12 ns t_ON, low 2 pC charge injection for minimal sample-and-hold offset, 18 Ω R_DS(on) matching across channels, logic-level compatibility with 1 V/4 V thresholds, and verified operation over –40 °C to +85 °C.

Technical Context

The DG613DY integrates four independent lateral DMOS analog switches fabricated using Vishay's proprietary D/CMOS process, combining n-channel DMOS FETs with low-power CMOS control logic and drivers. An epitaxial layer prevents latch-up, enabling robust operation under transient conditions.

Its versatile configuration supports four SPST, two SPDT, or one DPDT switching topologies via external logic control. Switches conduct bidirectionally when ON and block up to 16 V_p-p when OFF, with analog signal range spanning V_– to (V₊ – 5) V under recommended operating conditions.

Key Specifications

Pinout & Package

Package: 16-pin narrow SOIC (JEDEC MS-012), body width 3.9 mm, lead pitch 1.27 mm, RoHS-compliant with matte tin terminations (E3 suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar analog switch applications.

Compared with ADG1414BRUZ and MAX4617ESA+, the DG613DY uniquely balances 12 ns speed, ±2 pC charge injection, 18 Ω R_DS(on), and wide ±10.5 V analog range-making it optimal for video, DAC deglitching, and fast sample-and-hold where all three parameters must be simultaneously satisfied.

Availability

DG613DY is available at Aetrix Electronics and suitable for pixel-rate video switching, DAC deglitching, and fast sample-and-hold applications requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for DG613DY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global semiconductor manufacturer specializing in discrete power MOSFETs, analog switches, diodes, and optoelectronics, with vertical integration from silicon wafer fabrication to final test.

The DG613DY belongs to Vishay's high-speed D/CMOS analog switch product line, engineered specifically for applications demanding nanosecond switching, ultra-low charge injection, and robust dual-supply operation in video, test equipment, and communications infrastructure.

FAQ

What is the maximum analog signal voltage range supported by the DG613DY?

The DG613DY supports an analog signal range from V_– to (V₊ – 5) V under recommended operating conditions. With V₊ = 15 V and V_– = –3 V, this yields a usable range of –3 V to +10 V. Absolute maximum ratings allow V₊ – V_– up to 21 V, but signal swing must remain within the specified range to avoid distortion or damage. The DG613DY maintains consistent R_DS(on) and charge injection performance across this full range.

Can the DG613DY operate from a single 5 V supply?

Yes, the DG613DY can operate from a single 5 V supply applied to V₊, with V_– tied to ground. In this configuration, the analog signal range is 0 V to 0 V (since V₊ – 5 = 0 V), limiting use to unipolar signals near ground. For wider unipolar ranges, V₊ should be ≥10 V (e.g., 12 V or 15 V). The DG613DY's logic supply VL must be ≥4 V and ≤V₊, so 5 V single-supply operation requires VL = 5 V.

How does the DG613DY achieve low charge injection of ±2 pC?

The DG613DY achieves ±2 pC charge injection through matched transistor geometry, symmetrical layout of source/drain diffusion regions, and optimized gate oxide thickness in its lateral DMOS process. Internal charge cancellation techniques-such as balanced gate drive and differential switch pairing-are implemented at the die level. This specification is guaranteed across temperature and supply voltage, and directly enables sub-LSB accuracy in 12-bit sample-and-hold circuits using the DG613DY.

Is the DG613DY pin-compatible with other devices in the DG611/DG612/DG613 family?

Yes, the DG613DY shares identical pinout and package (16-pin narrow SOIC) with DG611DY and DG612DY. All three devices have the same terminal assignments for V₊, V_–, GND, VL, IN1–IN4, S1–S4, and D1–D4. However, truth table behavior differs: DG611 is ON with logic low, DG612 is ON with logic high, while DG613 implements complementary NO/NC switching per INx. No PCB change is needed for substitution, but firmware/control logic must match the selected device's switching polarity.

What thermal derating applies to the DG613DY in narrow SOIC package?

The DG613DY in narrow SOIC has a power dissipation rating of 600 mW at T_A ≤ 75 °C. Above 75 °C, power must be linearly derated at 7.6 mW/°C. At 105 °C ambient, maximum allowable power drops to 372 mW. This derating ensures junction temperature remains within safe limits (T_J ≤ 150 °C). The DG613DY's low quiescent current (1.2 nW) and low R_DS(on) minimize self-heating, making thermal management straightforward in most applications.