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Vishay Siliconix DG636EEN-T1-GE4
- Part No.:
- DG636EEN-T1-GE4
- Manufacturer:
- Vishay Siliconix
- Package:
- 16-UFQFN
- Datasheet:
-
DG636EEN-T1-GE4.pdf
- Description:
- IC SWITCH SPDTX2 96OHM 16MINIQFN
- Quantity:
- Payment:
- Shipping:
Inventory:19,127
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Product details
Overview
DG636EEN-T1-GE4 from Vishay Siliconix is a dual SPDT CMOS analog switch designed for precision signal routing in data acquisition and sample-and-hold systems. It operates from ±5 V dual supplies or +3 V to +16 V single supply, delivers <±0.3 pC charge injection, 63 Ω typical on-resistance at ±5 V, and supports -40 °C to +125 °C operation in miniQFN-16 package.
For engineers reviewing the DG636EEN-T1-GE4 datasheet, DG636EEN-T1-GE4 pinout, DG636EEN-T1-GE4 application, or DG636EEN-T1-GE4 equivalent, key selection criteria include ultralow charge injection for ADC front ends, guaranteed 2 V logic thresholds at ±5 V, break-before-make switching, and leakage <1 nA at 85 °C in the 16-pin miniQFN package.
Technical Context
The DG636EEN-T1-GE4 implements two independent SPDT switches controlled by A0, A1, and ENABLE inputs with CMOS/TTL-compatible logic levels. Each switch conducts bidirectionally when on and blocks signals up to rail voltage when off, with break-before-make timing of 2 ns (min) at room temperature.
It features low parasitic capacitance (CS(off) = 3.7 pF typ., CD(on) = 8.4 pF typ.), 700 MHz -3 dB bandwidth under ±5 V dual-supply conditions, and maintains <±0.4 pC charge injection across full analog signal range - critical for minimizing sampling errors in high-resolution data converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Analog Signal Range | ±5 V (dual supply) or 0–5 V (single supply): supports rail-to-rail input/output in precision analog paths |
| On-Resistance (RDS(on)) | 63 Ω typ. at ±5 V: ensures minimal signal attenuation and gain error in sensor/ADC interfaces |
| Charge Injection | ±0.33 pC max. (room temp): limits voltage glitch on hold capacitors in sample-and-hold circuits |
| Off-Leakage Current | ±1 nA max. at 85 °C (miniQFN): preserves accuracy in high-impedance measurement nodes |
| Bandwidth (-3 dB) | 700 MHz at ±5 V: enables fast-switching applications including wideband communications and test equipment |
| Switching Time (tON/tOFF) | 24 ns / 19 ns typ. at ±5 V: supports high-throughput multiplexing in automated test systems |
| Operating Temperature | -40 °C to +125 °C: qualified for industrial and automotive under-hood environments |
Pinout & Package
Package: 16-pin miniQFN (1.8 mm × 2.6 mm, 0.4 mm pitch), thermally enhanced, leadless, exposed copper thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | S1A, S1B, S2A, S2B | Source terminals for dual SPDT switches; bidirectional conduction path with matched RDS(on) |
| 5, 6, 7 | A0, A1, ENABLE | 3-bit address/control logic inputs; ENABLE = L forces all switches open; CMOS/TTL compatible thresholds |
| 8, 15, 16 | V+, V-, GND | Power rails: V+ and V- define analog signal range; GND serves as digital reference and thermal pad connection |
| 9, 10, 11, 12 | D1, D2, NC, NC | D1/D2 are common drain outputs; NC pins are no-connect - must be left unconnected per datasheet |
| 13, 14 | NC, NC | No-connect terminals; internal floating - not to be tied to any potential or used for PCB routing |
Key Features
| Feature | Design Value |
|---|---|
| Ultralow Charge Injection | ±0.33 pC max. over full analog range: reduces settling error in precision sample-and-hold and switched-capacitor circuits |
| Low On-Resistance Flatness | 15 Ω typ. (±5 V): maintains consistent gain and linearity across analog input voltage swing |
| Break-Before-Make Switching | 2 ns min. tBBM: prevents momentary shorting between signal sources during channel change |
| High Off-Isolation | -63 dB typ. at 10 MHz: minimizes crosstalk between active and inactive channels in multi-channel DAQ |
| Wide Supply Flexibility | Operates from +3 V to +16 V single supply or ±3 V to ±8 V dual supply: simplifies system power architecture |
Applications
| Medical Instrumentation | Data Acquisition Systems |
|---|---|
Use Scenario: Multiplexing ECG/EEG sensor inputs into a 24-bit delta-sigma ADC with >100 dB SNR. IC Role / Device Role / Timing Role: Dual SPDT analog switch providing low-glitch, rail-to-rail signal routing before anti-alias filtering. Use Value: ±0.33 pC charge injection prevents hold capacitor voltage corruption, preserving diagnostic signal fidelity. | Use Scenario: Channel scanning in modular PLC I/O modules with 16-channel analog input cards. IC Role / Device Role / Timing Role: Precision analog multiplexer enabling sequential sampling of thermocouple, RTD, and voltage inputs. Use Value: 63 Ω RDS(on) and <1 nA leakage ensure accurate cold-junction compensation and sensor linearity. |
| Precision Test Equipment | Automated Test Equipment (ATE) |
Use Scenario: Signal path selection in benchtop multimeters requiring sub-μV offset stability and 100 kSPS sampling. IC Role / Device Role / Timing Role: Low-noise analog switch isolating reference voltage paths from measurement circuitry. Use Value: -63 dB off-isolation and -62 dB crosstalk suppress interference between reference and signal chains. | Use Scenario: High-speed channel routing in semiconductor wafer probers handling RF and DC parametric tests. IC Role / Device Role / Timing Role: Fast-switching SPDT element in parallel test head signal distribution networks. Use Value: 24 ns tON and 700 MHz bandwidth support <100 ns test cycle times without signal degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar analog switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MAX4636ETE+ | Higher on-resistance (120 Ω typ. at ±5 V), higher charge injection (±1.5 pC), TQFN-16 package | Less suitable for sub-16-bit precision sample-and-hold; better for general-purpose routing where speed > precision | Select DG636EEN-T1-GE4 when charge injection and on-resistance flatness are critical |
| ADG736BRMZ-REEL7 | Lower bandwidth (200 MHz), higher leakage (±5 nA at 85 °C), same 16-pin MSOP package | Optimized for low-voltage (≤3.3 V) portable instrumentation; insufficient isolation for high-density DAQ | Choose DG636EEN-T1-GE4 for industrial-grade temperature range and superior off-isolation |
Compared with MAX4636ETE+ and ADG736BRMZ-REEL7, DG636EEN-T1-GE4 delivers the lowest charge injection and highest off-isolation in its class - making it the preferred choice for metrology-grade data acquisition where signal integrity directly impacts measurement uncertainty.
Availability
DG636EEN-T1-GE4 is available at Aetrix Electronics and suitable for medical instrumentation, industrial data acquisition, precision test equipment, and automated test equipment requiring stable component supply across extended temperature ranges.
Supply support for DG636EEN-T1-GE4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs high-performance analog semiconductors, specializing in MOSFETs, diodes, optoelectronics, and precision analog switches for industrial, automotive, and computing markets.
The DG636E product line targets high-fidelity analog signal routing in demanding measurement and control systems - emphasizing ultralow charge injection, rail-to-rail operation, and robust thermal performance in compact packages.
FAQ
What is the maximum analog signal voltage range supported by DG636EEN-T1-GE4?
DG636EEN-T1-GE4 supports analog signals from V− to V+ - up to ±5 V with dual supplies or 0 V to +5 V with single +5 V supply. The device clamps signals exceeding rails via internal diodes; forward current must remain within absolute maximum ratings (30 mA continuous, 100 mA pulsed). This rail-to-rail capability enables direct interfacing with sensors and ADCs without level-shifting circuitry.
Does DG636EEN-T1-GE4 require external pull-up or pull-down resistors on control pins A0, A1, and ENABLE?
No, DG636EEN-T1-GE4 does not require external biasing on A0, A1, or ENABLE. Its CMOS/TTL-compatible inputs have guaranteed logic thresholds: 2 V minimum for HIGH and 0.8 V maximum for LOW when operated from ±5 V or +5 V supplies. Input leakage is <0.1 μA across temperature, allowing direct connection to microcontroller GPIOs without additional components.
How does the miniQFN-16 package of DG636EEN-T1-GE4 affect thermal performance compared to the TSSOP variant?
DG636EEN-T1-GE4 in miniQFN-16 has a thermal resistance (θJA) of 152 °C/W, lower than the 178 °C/W of the TSSOP-14 variant. Its exposed copper thermal pad enables direct PCB heat sinking, improving power dissipation capability (525 mW vs. 450 mW). This makes DG636EEN-T1-GE4 preferable for high-density layouts or elevated ambient temperatures where thermal management is critical.
Can DG636EEN-T1-GE4 operate reliably at 3 V single supply, and what performance trade-offs occur?
Yes, DG636EEN-T1-GE4 is fully specified at +3 V single supply. At this voltage, RDS(on) increases to 309 Ω (typ.), tON extends to 115 ns (typ.), and bandwidth drops to 453 MHz. Logic thresholds adjust to 1.4 V (HIGH) and 0.6 V (LOW). These trade-offs are acceptable in low-power portable instrumentation where precision outweighs speed - but not in high-throughput DAQ systems.
What is the significance of break-before-make timing in DG636EEN-T1-GE4, and how is it verified?
Break-before-make timing in DG636EEN-T1-GE4 ensures no overlap between switch closure events - preventing momentary shorts between signal sources. Measured at 5 ns (typ.) and ≥2 ns (min.) under ±5 V conditions, it is verified using the test circuit in Figure 3 of the datasheet (S17-1518-Rev. B). This behavior is essential in multiplexed sensor arrays and relay-replacement applications where source isolation is mandatory.
DG636EEN-T1-GE4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Switch Circuit:
- SPDT
- Multiplexer/Demultiplexer Circuit:
- 2:1
- Number of Circuits:
- 2
- On-State Resistance (Max):
- 96Ohm
- Channel-to-Channel Matching (ΔRon):
- 300mOhm
- Voltage - Supply, Single (V+):
- 3V ~ 16V
- Voltage - Supply, Dual (V±):
- ±3V ~ 8V
- Switch Time (Ton, Toff) (Max):
- 46ns, 55ns
- -3db Bandwidth:
- 700MHz
- Charge Injection:
- -0.33pC
- Channel Capacitance (CS(off), CD(off)):
- 3.7pF, 4.4pF
- Current - Leakage (IS(off)) (Max):
- 1nA
- Crosstalk:
- -62dB @ 1MHz
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-miniQFN (1.8x2.6)
DG636EEN-T1-GE4 FAQ
1.How can I place an order for DG636EEN-T1-GE4 through Aetrix?
Please submit a Request for Quotation (RFQ) for DG636EEN-T1-GE4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DG636EEN-T1-GE4 reliable?
The price and inventory of DG636EEN-T1-GE4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DG636EEN-T1-GE4 is usually 5 days.
3.What payment methods are accepted for DG636EEN-T1-GE4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DG636EEN-T1-GE4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DG636EEN-T1-GE4?
DG636EEN-T1-GE4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DG636EEN-T1-GE4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DG636EEN-T1-GE4?
For technical support, including DG636EEN-T1-GE4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DG636EEN-T1-GE4 requirements.
6.How does Aetrix verify that DG636EEN-T1-GE4 is sourced from the original manufacturer or authorized distributors?
All DG636EEN-T1-GE4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DG636EEN-T1-GE4 meets industry standards.
7.What is the process for return or replacement of DG636EEN-T1-GE4?
All DG636EEN-T1-GE4 units undergo pre-shipment inspection (PSI). If there is an issue with DG636EEN-T1-GE4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DG636EEN-T1-GE4 part is unused and in its original packaging.
Return procedure for DG636EEN-T1-GE4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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