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Vishay Siliconix DG636EEQ-T1-GE3
- Part No.:
- DG636EEQ-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Package:
- 16-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
DG636EEQ-T1-GE3.pdf
- Description:
- IC SWITCH SPDT X 2 96OHM 16TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:1,240
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Product details
Overview
DG636EEQ-T1-GE3 from Vishay Siliconix is a dual SPDT CMOS analog switch designed for precision signal routing in data acquisition and sample-and-hold circuits. It operates from ±5 V, +5 V, or +3 V single supplies; delivers 63 Ω typical on-resistance at ±5 V; exhibits < ±0.3 pC charge injection; and supports -40 °C to +125 °C operation in a 16-pin miniQFN package.
For engineers reviewing the DG636EEQ-T1-GE3 datasheet, DG636EEQ-T1-GE3 pinout, DG636EEQ-T1-GE3 application, or DG636EEQ-T1-GE3 equivalent, key selection criteria include ultralow charge injection for high-accuracy sampling, sub-nA leakage at elevated temperature, break-before-make switching, and compatibility with 3 V/5 V/±5 V supply configurations in space-constrained designs.
Technical Context
The DG636EEQ-T1-GE3 implements two independent SPDT switches controlled by A0, A1, and ENABLE logic inputs with CMOS/TTL-compatible thresholds (1.4 V min high at 3 V supply). Each switch conducts bidirectionally with break-before-make action and clamps analog signals exceeding V+ or V− via internal diodes.
It features low parasitic capacitance-3.7 pF source-off and 8.4 pF drain-on at ±5 V-and delivers 700 MHz -3 dB bandwidth under 50 Ω/5 pF load. Specified across -40 °C to +125 °C, it maintains ≤129 Ω max RDS(on) and ≤4 pA max leakage at 85 °C in dual-supply mode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Analog Signal Range | ±5 V (dual supply) or 0–5 V (single supply): supports rail-to-rail analog input without external level shifting |
| On-Resistance (RDS(on)) | 63 Ω typ. at ±5 V: enables low insertion loss and minimal gain error in precision signal paths |
| Charge Injection | ±0.33 pC typ.: reduces sampling pedestal error in ADC front ends and sample-and-hold stages |
| Off-Leakage Current | ±0.5 nA max at 85 °C: preserves signal integrity in high-impedance sensor interfaces |
| Bandwidth (-3 dB) | 700 MHz at ±5 V: supports fast-switching applications including broadband communications and test equipment |
| Supply Voltage Range | +3 V to +16 V single or ±3 V to ±8 V dual: provides design flexibility across industrial, medical, and instrumentation platforms |
| Operating Temperature | -40 °C to +125 °C: qualified for under-hood automotive, industrial control, and harsh-environment deployments |
Pinout & Package
Package: 16-pin miniQFN (1.8 mm × 2.6 mm, 0.4 mm pitch), leadless, exposed thermal pad, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | S1A, S1B, S2A, S2B | Switch source terminals: bidirectional analog I/O pins for dual SPDT configuration |
| 5, 6, 7 | A0, A1, ENABLE | Digital address/control inputs: 2-bit binary select + global enable with 1.4 V/2 V logic thresholds |
| 8, 9, 10, 11 | D1, D2, V+, GND | Drain outputs, positive supply, ground: D1/D2 connect to selected Sx path; V+/GND power core logic and analog rails |
| 12, 13, 14, 15 | V−, NC, NC, NC | Negative supply (V−) required for dual-supply operation; three no-connect pins per mechanical layout |
| 16 | Exposed Pad | Thermal and electrical ground: must be soldered to PCB ground plane for thermal dissipation and noise reduction |
Key Features
| Feature | Design Value |
|---|---|
| Ultralow charge injection | ±0.33 pC typ. over full analog range: minimizes voltage step errors during sampling in precision ADC systems |
| Break-before-make switching | 5 ns min tBBM at room temp: prevents momentary shorting between signal paths in multiplexed architectures |
| Low off-capacitance | 3.7 pF source-off: improves channel isolation (> −63 dB at 10 MHz) and reduces crosstalk in dense layouts |
| Wide supply compatibility | Fully specified at +3 V, +5 V, and ±5 V: eliminates need for level translators in mixed-voltage systems |
| High-temperature performance | Specified to +125 °C with ≤2 nA leakage: supports extended-range operation in engine control and industrial PLCs |
Applications
| Data Acquisition Systems | Medical Instruments |
|---|---|
Use Scenario: Multiplexing multiple sensor inputs (e.g., thermocouples, strain gauges) into a single high-resolution ADC channel. IC Role / Device Role / Timing Role: Dual SPDT analog switch providing low-error signal routing with minimal charge injection and leakage. Use Value: Enables 24-bit ADC accuracy by limiting sampling pedestal error to <1 LSB at 1 MSPS due to ±0.33 pC QINJ. | Use Scenario: Selecting ECG electrode channels or EEG amplification paths in portable diagnostic devices. IC Role / Device Role / Timing Role: Precision analog multiplexer with rail-to-rail ±5 V support and ultra-low leakage for biopotential signal integrity. Use Value: Maintains >100 dB common-mode rejection by limiting off-channel leakage to <0.5 nA at body-temperature operating conditions. |
| Precision Instruments | Automated Test Equipment |
Use Scenario: Configuring reference voltage paths and calibration signal routing in digital multimeters and source-measure units. IC Role / Device Role / Timing Role: Low-RDS(on), low-flatness analog switch ensuring stable gain and offset across measurement ranges. Use Value: Delivers <15 Ω Rflat(on) and <2 Ω ΔRDS(on), reducing measurement uncertainty to <0.01% of full scale. | Use Scenario: Signal path switching in PXI-based functional testers handling mixed-signal DUTs with varying voltage domains. IC Role / Device Role / Timing Role: High-bandwidth (700 MHz), low-crosstalk analog switch enabling GHz-scale stimulus/response routing. Use Value: Achieves −62 dB crosstalk at 10 MHz and <52 ns tON, supporting 100+ MHz digital pattern rates with analog validation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual SPDT analog switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MAX4636EUB+ | 10-pin µMAX package; 65 Ω RDS(on); 0.5 pC charge injection; only rated to +85 °C | Limited to commercial-temperature instrumentation; lacks miniQFN footprint and extended temp qualification | Select when board space allows larger package and ambient temperature stays below 85 °C |
| ADG636YRUZ | 16-pin TSSOP; 65 Ω RDS(on); 0.5 pC charge injection; specified to +125 °C but higher 1.2 nA leakage at 85 °C | Compatible pinout for drop-in replacement in TSSOP layouts; higher leakage may impact high-Z sensor nodes | Choose for legacy TSSOP designs requiring same functionality without re-layout |
Compared with MAX4636EUB+ and ADG636YRUZ, the DG636EEQ-T1-GE3 offers superior charge injection (±0.33 pC vs. ≥0.5 pC) and lower leakage (<0.5 nA vs. ≥1.2 nA at 85 °C), making it optimal for high-precision, high-temperature data acquisition where signal fidelity is critical.
Availability
DG636EEQ-T1-GE3 is available at Aetrix Electronics and suitable for data acquisition systems, medical instruments, and automated test equipment requiring stable component supply across extended temperature ranges and high-reliability production cycles.
Supply support for DG636EEQ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-performance analog switches, MOSFETs, and precision resistors.
The DG636EEQ-T1-GE3 belongs to Vishay's high-precision analog switch product line, engineered for low-error signal routing in demanding instrumentation, medical, and industrial sensing applications.
FAQ
What supply voltages does the DG636EEQ-T1-GE3 support?
The DG636EEQ-T1-GE3 supports single-supply operation from +3 V to +16 V and dual-supply operation from ±3 V to ±8 V. It is fully characterized at +3 V, +5 V, and ±5 V, with guaranteed logic thresholds (1.4 V high at 3 V, 2 V high at 5 V/±5 V) and analog signal ranges matching the supply rails. This ensures reliable operation across battery-powered, industrial, and mixed-voltage system designs without external level-shifting circuitry.
How does the DG636EEQ-T1-GE3 achieve ultralow charge injection?
The DG636EEQ-T1-GE3 achieves ±0.33 pC typical charge injection through matched transistor geometry, optimized gate drive timing, and internal charge cancellation techniques. Measured with CL = 1 nF and RGEN = 0 Ω at 25 °C, this value remains stable across the full analog signal range (±5 V) and temperature extremes (−40 °C to +125 °C), directly enabling high-accuracy sampling in 18–24-bit data acquisition systems where pedestal error must be minimized.
Is the DG636EEQ-T1-GE3 pin-compatible with other Vishay DG636 variants?
No-the DG636EEQ-T1-GE3 uses the 16-pin miniQFN package, while the DG636EEQ-T1-GE4 uses 14-pin TSSOP and DG636EEN-T1-GE4 uses the same 16-pin miniQFN but with different marking and tape/reel specs. Pin functions are identical across all DG636E variants, but physical layout, thermal pad presence, and land pattern requirements differ. The DG636EEQ-T1-GE3 requires the miniQFN-16 footprint per Vishay document 69938 and cannot be substituted without PCB revision.
What is the maximum allowable analog signal voltage for the DG636EEQ-T1-GE3?
The maximum analog signal voltage for the DG636EEQ-T1-GE3 equals the supply rails: ±5 V in dual-supply mode or 0–5 V in single-supply mode. Signals exceeding V+ or V− are clamped by internal diodes; forward diode current must be limited to the absolute maximum rating of 30 mA continuous or 100 mA pulsed (1 ms, 10% duty cycle). Exceeding these limits risks permanent damage or parametric shift.
Does the DG636EEQ-T1-GE3 require external pull-up or pull-down resistors on control pins?
No-control inputs (A0, A1, ENABLE) have CMOS/TTL-compatible thresholds and negligible input current (≤0.1 μA over temperature), so external biasing is unnecessary. However, floating inputs must be avoided: ENABLE must be held high to activate switching or low to disable all paths. For robust noise immunity in noisy environments, Vishay recommends tying unused address lines to V+ or GND with ≤10 kΩ resistors rather than leaving them open.
DG636EEQ-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Switch Circuit:
- SPDT
- Multiplexer/Demultiplexer Circuit:
- 2:1
- Number of Circuits:
- 2
- On-State Resistance (Max):
- 96Ohm
- Channel-to-Channel Matching (ΔRon):
- 300mOhm
- Voltage - Supply, Single (V+):
- 3V ~ 16V
- Voltage - Supply, Dual (V±):
- ±3V ~ 8V
- Switch Time (Ton, Toff) (Max):
- 46ns, 55ns
- -3db Bandwidth:
- 700MHz
- Charge Injection:
- -0.33pC
- Channel Capacitance (CS(off), CD(off)):
- 3.7pF, 4.4pF
- Current - Leakage (IS(off)) (Max):
- 1nA
- Crosstalk:
- -62dB @ 1MHz
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-TSSOP
DG636EEQ-T1-GE3 FAQ
1.How can I place an order for DG636EEQ-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for DG636EEQ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DG636EEQ-T1-GE3 reliable?
The price and inventory of DG636EEQ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DG636EEQ-T1-GE3 is usually 5 days.
3.What payment methods are accepted for DG636EEQ-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DG636EEQ-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DG636EEQ-T1-GE3?
DG636EEQ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DG636EEQ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DG636EEQ-T1-GE3?
For technical support, including DG636EEQ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DG636EEQ-T1-GE3 requirements.
6.How does Aetrix verify that DG636EEQ-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All DG636EEQ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DG636EEQ-T1-GE3 meets industry standards.
7.What is the process for return or replacement of DG636EEQ-T1-GE3?
All DG636EEQ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with DG636EEQ-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DG636EEQ-T1-GE3 part is unused and in its original packaging.
Return procedure for DG636EEQ-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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