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Vishay Siliconix DG636EEQ-T1-GE4

Part No.:
DG636EEQ-T1-GE4
Manufacturer:
Vishay Siliconix
Category:
Analog Switches, Multiplexers, Demultiplexers
Package:
14-TSSOP (0.173", 4.40mm Width)
Datasheet:
AetrixDG636EEQ-T1-GE4.pdf
Description:
IC SWITCH SPDT X 2 96OHM 14TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,387

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Product details

Overview

DG636EEQ-T1-GE4 from Vishay Siliconix is a dual SPDT CMOS analog switch designed for precision signal routing in data acquisition and sample-and-hold circuits. It operates from ±5 V, +5 V, or +3 V supplies; delivers 63 Ω typical on-resistance, <0.3 pC charge injection, 3.7 pF source-off capacitance, and supports -40 °C to +125 °C operation in a 14-lead TSSOP package.

For engineers reviewing the DG636EEQ-T1-GE4 datasheet, DG636EEQ-T1-GE4 pinout, DG636EEQ-T1-GE4 application, or DG636EEQ-T1-GE4 equivalent, key selection criteria include ultralow charge injection for minimal signal disturbance, sub-nA leakage at 85 °C, break-before-make switching, and guaranteed 2 V logic high threshold with ±5 V supply.

Technical Context

The DG636EEQ-T1-GE4 implements two independent SPDT switches controlled by a 2-bit address (A0, A1) and an enable input (ENABLE), supporting bidirectional analog conduction and full rail-to-rail signal handling up to supply limits. Its CMOS/TTL-compatible digital interface guarantees 2 V logic-high recognition at ±5 V supply and 1.4 V at 3 V supply.

It features break-before-make switching action with 5 ns typical tBBM, 700 MHz -3 dB bandwidth under ±5 V dual-supply conditions, and excellent isolation (>−63 dB off-isolation at 10 MHz) and crosstalk suppression (>−62 dB channel-to-channel).

Key Specifications

ParameterValue and Actual Design Meaning
Analog Signal Range±5 V (dual supply) or 0–5 V (single supply): enables full-range signal switching without clipping.
On-Resistance (RDS(on))63 Ω typ. at ±5 V: ensures low insertion loss and minimal voltage drop in precision analog paths.
Charge Injection±0.33 pC max. (room temp): critical for low-error sample-and-hold and ADC front-end accuracy.
Leakage Current<0.5 nA max. at 85 °C: maintains signal integrity in high-impedance sensor interfaces.
Source-Off Capacitance (CS(off))3.7 pF typ.: minimizes capacitive feedthrough and crosstalk in multi-channel systems.
Bandwidth (-3 dB)700 MHz at ±5 V: supports high-frequency signal routing in communications and test equipment.
Operating Temperature-40 °C to +125 °C: qualified for automotive under-hood and industrial control environments.

Pinout & Package

Package: 14-lead TSSOP (5.0 mm × 6.4 mm × 1.2 mm), RoHS-compliant, moisture sensitivity level 1.

PinCircuit RoleDesign Meaning
1GNDGround reference for analog and digital circuitry; must be low-impedance connection.
2S1BSwitch 1, normally open path (SPDT B-side); bidirectional analog terminal.
3A0LSB address input; controls S1/S2 path selection when ENABLE = high.
4V+Positive supply rail; supports +3 V to +16 V single or ±3 V to ±8 V dual operation.
5ENABLEGlobal enable input; high = active switching, low = all switches open (high-Z state).
6V-Negative supply rail; required for dual-supply operation; clamps signals exceeding rails via internal diodes.
7S2BSwitch 2, normally open path (SPDT B-side); isolated from S1B with >−62 dB crosstalk.
8D2Switch 2 common drain/output; connects to S2A or S2B based on A1/A0 state.
9S1ASwitch 1, normally closed path (SPDT A-side); low on-resistance path for primary signal routing.
10NCNo connect; internally unconnected; must remain floating or grounded per layout guidelines.
11S2ASwitch 2, normally closed path (SPDT A-side); matched RDS(on) and flatness vs. S1A.
12A1MSB address input; together with A0, selects one of four switch combinations per truth table.
13NCNo connect; internally unconnected; no external connection required.
14D1Switch 1 common drain/output; connects to S1A or S1B; supports bidirectional signal flow.

Key Features

FeatureDesign Value
Ultralow charge injection±0.33 pC max. ensures sub-LSB error in 16-bit+ data acquisition sampling.
Break-before-make switching5 ns typical tBBM prevents momentary shorting between signal sources during switching.
Full rail-to-rail analog rangeSupports signals from V− to V+ without distortion-critical for ±5 V sensor interfaces.
Low parasitic capacitance3.7 pF CS(off) and 8.4 pF CD(on) minimize timing skew and crosstalk in high-density layouts.
Wide supply flexibilityQualified at ±5 V, +5 V, and +3 V-enables reuse across legacy and low-power system designs.

Applications

Medical InstrumentationPrecision Data Acquisition

Use Scenario: Multiplexing ECG/EEG electrode inputs in portable patient monitors.

IC Role / Device Role / Timing Role: Dual SPDT analog switch routing biopotential signals to a single high-resolution ADC channel.

Use Value: 0.33 pC charge injection prevents baseline shift and preserves microvolt-level signal fidelity.

Use Scenario: Channel selection in 16-bit automated test equipment (ATE) front ends.

IC Role / Device Role / Timing Role: Precision analog multiplexer enabling sequential sampling of multiple sensor outputs.

Use Value: 63 Ω RDS(on) and 3.7 pF CS(off) maintain THD < −95 dB and settling time < 500 ns.

Communications SystemsIndustrial Sample-and-Hold Circuits

Use Scenario: RF signal path selection in broadband transceiver calibration loops.

IC Role / Device Role / Timing Role: High-bandwidth analog switch routing IF signals between DAC output and ADC input paths.

Use Value: 700 MHz bandwidth and >−63 dB off-isolation prevent LO leakage and intermodulation distortion.

Use Scenario: Holding analog sensor outputs during ADC conversion cycles in PLC analog I/O modules.

IC Role / Device Role / Timing Role: Low-leakage hold switch isolating capacitor from source impedance during acquisition phase.

Use Value: <0.5 nA leakage at 85 °C ensures <1 LSB drift over 10 ms hold time at 16-bit resolution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar analog switch applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MAX4636ESE+Higher on-resistance (120 Ω typ.), higher charge injection (±1.5 pC), same TSSOP-14 package.Less suitable for sub-16-bit precision sampling due to higher signal disturbance.Select when cost sensitivity outweighs charge injection requirements and ±5 V operation is sufficient.
ADG1436BRUZLower on-resistance (4.5 Ω typ.), but larger 24-lead TSSOP package and higher supply current (120 μA vs. 0.5 μA).Better for low-RON power-switching; less optimal for ultra-low-power battery-operated DAQ.Select when minimizing on-resistance is critical and board space/layout changes are acceptable.

Compared with MAX4636ESE+ and ADG1436BRUZ, DG636EEQ-T1-GE4 uniquely balances ultralow charge injection, sub-nA leakage at elevated temperature, and compact TSSOP-14 footprint-making it optimal for high-fidelity, thermally demanding analog multiplexing where signal integrity and layout efficiency are jointly constrained.

Availability

DG636EEQ-T1-GE4 is available at Aetrix Electronics and suitable for medical instrumentation, precision data acquisition, and industrial sample-and-hold circuits requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DG636EEQ-T1-GE4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability analog solutions for industrial, automotive, and computing markets.

The DG636EEQ-T1-GE4 belongs to Vishay's precision analog switch product line, engineered specifically for low-distortion, low-leakage signal routing in high-accuracy measurement and control systems.

FAQ

What is the maximum operating temperature range for DG636EEQ-T1-GE4?

DG636EEQ-T1-GE4 is fully specified from -40 °C to +125 °C, with leakage current guaranteed at <0.5 nA maximum at +85 °C. This extended temperature rating makes DG636EEQ-T1-GE4 suitable for under-hood automotive sensors and industrial control modules where thermal robustness is critical.

Does DG636EEQ-T1-GE4 support single-supply operation at 3 V?

Yes, DG636EEQ-T1-GE4 is fully specified for +3 V single-supply operation, with logic thresholds adjusted to 1.4 V (high) and 0.6 V (low). At 3 V, it delivers 309 Ω typical on-resistance and maintains <0.5 nA leakage-enabling compatibility with modern low-voltage microcontrollers and battery-powered instrumentation.

How does the break-before-make timing affect signal integrity in DG636EEQ-T1-GE4?

DG636EEQ-T1-GE4 guarantees a minimum 2 ns break-before-make time (tBBM) across temperature, preventing transient shorting between signal sources during switching transitions. This behavior is essential in multiplexed sensor arrays and calibration loops where cross-coupling could corrupt measurements or damage upstream circuitry.

What is the significance of 3.7 pF source-off capacitance in DG636EEQ-T1-GE4?

The 3.7 pF source-off capacitance (CS(off)) in DG636EEQ-T1-GE4 directly limits capacitive feedthrough from adjacent channels, contributing to >−62 dB crosstalk at 10 MHz. In high-channel-count DAQ systems, this low value reduces ghosting artifacts and improves effective resolution when multiplexing fast-changing analog signals.

Can DG636EEQ-T1-GE4 be used with ±12 V supplies?

No-DG636EEQ-T1-GE4 has an absolute maximum V+ to V− rating of +18 V, but its electrical specifications are only guaranteed for ±5 V, +5 V, and +3 V operation per datasheet S17-1518-Rev. B. Operation at ±12 V exceeds the qualified supply range and may degrade on-resistance matching, leakage, or reliability without characterization.

DG636EEQ-T1-GE4 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Switch Circuit:
SPDT
Multiplexer/Demultiplexer Circuit:
2:1
Number of Circuits:
2
On-State Resistance (Max):
96Ohm
Channel-to-Channel Matching (ΔRon):
2Ohm
Voltage - Supply, Single (V+):
3V ~ 16V
Voltage - Supply, Dual (V±):
±3V ~ 8V
Switch Time (Ton, Toff) (Max):
56ns, 61ns
-3db Bandwidth:
700MHz
Charge Injection:
-0.33pC
Channel Capacitance (CS(off), CD(off)):
3.7pF, 4.4pF
Current - Leakage (IS(off)) (Max):
500pA
Crosstalk:
-62dB @ 10MHz
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
14-TSSOP

DG636EEQ-T1-GE4 FAQ

1.How can I place an order for DG636EEQ-T1-GE4 through Aetrix?

Please submit a Request for Quotation (RFQ) for DG636EEQ-T1-GE4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DG636EEQ-T1-GE4 reliable?

The price and inventory of DG636EEQ-T1-GE4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DG636EEQ-T1-GE4 is usually 5 days.

3.What payment methods are accepted for DG636EEQ-T1-GE4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DG636EEQ-T1-GE4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DG636EEQ-T1-GE4?

DG636EEQ-T1-GE4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DG636EEQ-T1-GE4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DG636EEQ-T1-GE4?

For technical support, including DG636EEQ-T1-GE4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DG636EEQ-T1-GE4 requirements.

6.How does Aetrix verify that DG636EEQ-T1-GE4 is sourced from the original manufacturer or authorized distributors?

All DG636EEQ-T1-GE4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DG636EEQ-T1-GE4 meets industry standards.

7.What is the process for return or replacement of DG636EEQ-T1-GE4?

All DG636EEQ-T1-GE4 units undergo pre-shipment inspection (PSI). If there is an issue with DG636EEQ-T1-GE4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DG636EEQ-T1-GE4 part is unused and in its original packaging.

Return procedure for DG636EEQ-T1-GE4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DG636EEQ-T1-GE4 Tags

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