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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1220AB-100IND

Name: DS1220AB-100IND
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1220AB-100IND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1220AB-100IND

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 24-DIP Module (0.600", 15.24mm)

Datasheet:: DS1220AB-100IND.pdf

Description:: IC NVSRAM 16KBIT PARALLEL 24EDIP

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Product details

Overview

DS1220AB-100IND from Maxim Integrated (now Analog Devices) is a 16k nonvolatile static RAM organized as 2048 × 8 bits, featuring lithium-backed data retention, 100 ns read/write access time, ±5% V_CC tolerance (4.75–5.25 V), and industrial temperature operation (–40°C to +85°C). It directly replaces volatile 2k × 8 SRAMs and EEPROMs in legacy memory subsystems requiring power-loss immunity.

For engineers reviewing the DS1220AB-100IND datasheet, DS1220AB-100IND pinout, DS1220AB-100IND application, or DS1220AB-100IND equivalent, key selection criteria include guaranteed 10-year data retention without external power, automatic write protection during V_CC decay, unlimited write cycles, JEDEC-standard 24-pin EDIP package compatibility, and seamless drop-in replacement for 2716 EPROM/2816 EEPROM footprints.

Technical Context

The DS1220AB-100IND integrates on-die lithium battery switching circuitry that monitors V_CC continuously; when voltage falls below 4.5 V (V_TP), it disables inputs, places outputs in high-Z, and connects the lithium source to retain RAM contents. During power-up, the switch disconnects the battery once V_CC exceeds ~3.0 V and resumes normal CMOS SRAM operation above 4.75 V.

Its timing architecture supports asynchronous parallel bus interfacing with strict t_ACC = 100 ns, t_WC = 100 ns, and t_OE = 50 ns, while maintaining full compatibility with standard microprocessor control signals (CE, WE, OE) and address/data bus protocols used in 8-bit embedded systems and industrial controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	2048 words × 8 bits - matches byte-wide 2k × 8 SRAM footprint for direct PCB replacement
Access Time	100 ns - enables integration into 10 MHz bus systems without wait states
V_CC Range	4.75 V to 5.25 V (±5%) - supports stable operation across regulated 5 V rails with typical tolerance drift
Data Retention	10 years minimum without power - guaranteed by internal lithium cell and automatic backup switching
Operating Temperature	–40°C to +85°C - qualified for industrial control, metering, and automotive under-hood edge applications
Write Cycles	Unlimited - eliminates wear-out concerns in logging, configuration storage, or frequent state-save use cases
Package	24-pin 720-mil extended DIP (EDIP) - JEDEC-standard through-hole footprint compatible with legacy 2716/2816 layouts

Pinout & Package

DS1220AB-100IND uses a 24-pin 720-mil extended dual in-line package (EDIP) with through-hole mounting and RoHS-compliant lead finish. The package includes integrated lithium energy source and voltage-monitoring circuitry sealed within the epoxy body.

Pin/Terminal	Circuit Role	Design Meaning
A0–A10	Address Inputs	11-bit address bus supporting full 2048-word addressing; TTL-compatible input thresholds
DQ0–DQ7	Bi-directional Data I/O	8-bit data bus with tristate output drivers; active only when CE and OE are asserted
CE	Chip Enable	Active-low chip select; initiates read/write when low; forces high-Z on power loss
WE	Write Enable	Active-low write strobe; controls data latching; disables outputs when asserted during reads
OE	Output Enable	Active-low output enable; isolates data bus during writes or standby to prevent contention
V_CC	Power Supply	+5 V supply input; monitored for out-of-tolerance condition triggering automatic backup mode
GND	Ground Reference	System ground return; referenced for all DC and AC timing measurements

Key Features

Feature	Design Value
Lithium freshness seal	Battery remains electrically disconnected until first V_CC application, preserving full 10-year retention capacity
Automatic write protection	Hardware-level V_CC monitoring triggers unconditional write disable and high-Z outputs before data corruption occurs
Direct 2716/2816 pin compatibility	Identical pinout to 2716 EPROM and 2816 EEPROM - enables retrofit without PCB redesign
Zero support circuitry requirement	No external capacitors, regulators, or supervisory ICs needed for battery backup functionality
Industrial-grade reliability	Qualified over –40°C to +85°C with 100% tested AC/DC parameters and UL recognition (E99151)

Applications

Industrial Data Logger	Legacy PLC Memory Module
Use Scenario: Continuous timestamped sensor readings stored during mains power interruption in factory-floor monitoring systems. IC Role / Device Role / Timing Role: Nonvolatile SRAM holding real-time operational state and last-valid measurement set during brownout events. Use Value: Eliminates need for external EEPROM write buffering and guarantees atomic state capture with no write-cycle delay or wear-out risk.	Use Scenario: Replacement memory for aging programmable logic controller backplanes originally using 2816 EEPROMs. IC Role / Device Role / Timing Role: Drop-in byte-wide memory device providing faster 100 ns access vs. 2816's 250+ ns and unlimited rewrites. Use Value: Enables deterministic scan-cycle timing and removes EEPROM erase/write latency bottlenecks in cyclic control execution.
Energy Meter Firmware Storage	Medical Device Configuration Backup
Use Scenario: Storing tariff tables, calibration coefficients, and tamper-event logs in ANSI C12.20-compliant electricity meters. IC Role / Device Role / Timing Role: Secure, long-term configuration memory retaining critical billing parameters across 10+ year field deployment. Use Value: Meets 10-year data retention mandate without periodic refresh or external battery management circuitry.	Use Scenario: Preserving user-defined alarm thresholds, calibration offsets, and therapy settings in portable diagnostic equipment. IC Role / Device Role / Timing Role: Fail-safe memory element ensuring patient-critical configuration survives unexpected shutdown or battery swap. Use Value: Prevents clinical workflow disruption by guaranteeing immediate restore of validated settings post-power recovery.

Industrial Data Logger

Legacy PLC Memory Module

Use Scenario: Continuous timestamped sensor readings stored during mains power interruption in factory-floor monitoring systems.

IC Role / Device Role / Timing Role: Nonvolatile SRAM holding real-time operational state and last-valid measurement set during brownout events.

Use Value: Eliminates need for external EEPROM write buffering and guarantees atomic state capture with no write-cycle delay or wear-out risk.

Use Scenario: Replacement memory for aging programmable logic controller backplanes originally using 2816 EEPROMs.

IC Role / Device Role / Timing Role: Drop-in byte-wide memory device providing faster 100 ns access vs. 2816's 250+ ns and unlimited rewrites.

Use Value: Enables deterministic scan-cycle timing and removes EEPROM erase/write latency bottlenecks in cyclic control execution.

Energy Meter Firmware Storage

Medical Device Configuration Backup

Use Scenario: Storing tariff tables, calibration coefficients, and tamper-event logs in ANSI C12.20-compliant electricity meters.

IC Role / Device Role / Timing Role: Secure, long-term configuration memory retaining critical billing parameters across 10+ year field deployment.

Use Value: Meets 10-year data retention mandate without periodic refresh or external battery management circuitry.

Use Scenario: Preserving user-defined alarm thresholds, calibration offsets, and therapy settings in portable diagnostic equipment.

IC Role / Device Role / Timing Role: Fail-safe memory element ensuring patient-critical configuration survives unexpected shutdown or battery swap.

Use Value: Prevents clinical workflow disruption by guaranteeing immediate restore of validated settings post-power recovery.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1220AD-100IND+	Wider V_CC range (4.5–5.5 V, ±10%), lower V_TP (4.25 V); otherwise identical pinout, timing, and retention	Suitable where input rail regulation is looser or brownout threshold must trigger earlier	Select DS1220AD-100IND+ if system V_CC varies beyond ±5% or requires earlier backup activation
MAX6900AEN+	Serial I²C interface, 16 kbit EEPROM architecture, no internal battery; requires external write-protection logic	Lower pin count (8-pin SO), but slower (5 ms write), limited endurance (~1M cycles), no automatic power-fail response	Choose MAX6900AEN+ only for space-constrained designs accepting serial interface overhead and reduced reliability

Compared with DS1220AB-100IND, DS1220AD-100IND+ offers greater supply voltage flexibility at the cost of slightly reduced noise margin, while MAX6900AEN+ trades parallel bus performance and autonomous backup for compact packaging and simplified routing - neither provides true drop-in equivalence without firmware or layout changes.

Availability

DS1220AB-100IND is available at Aetrix Electronics and suitable for industrial data loggers, legacy PLC upgrades, and energy meter firmware storage requiring stable component supply, long-life data retention, and proven drop-in compatibility with 24-pin DIP memory sockets.

Supply support for DS1220AB-100IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated, now part of Analog Devices, designs precision analog, mixed-signal, and power management ICs for industrial, automotive, and communications applications.

The DS1220AB-100IND belongs to Maxim's nonvolatile SRAM product line, engineered specifically to replace aging EPROM/EEPROM memory in mission-critical systems where data integrity during power failure is non-negotiable.

FAQ

What is the guaranteed data retention period for DS1220AB-100IND?

The DS1220AB-100IND guarantees a minimum 10-year data retention period in the absence of external power, measured from the time V_CC is first applied. This is achieved via an internal lithium energy source and automatic power-fail detection circuitry that switches to battery backup when V_CC drops below 4.5 V. The retention time is design-guaranteed and not 100% tested per unit.

Does DS1220AB-100IND require external support components for battery backup operation?

No, DS1220AB-100IND requires no external support components for battery backup operation. Its integrated lithium cell and voltage-monitoring circuitry operate autonomously: the lithium source is electrically disconnected until first power-up, then automatically engages during V_CC failure. No capacitors, supervisors, or regulators are needed for full nonvolatile functionality.

Is DS1220AB-100IND pin-compatible with standard 2716 EPROMs and 2816 EEPROMs?

Yes, DS1220AB-100IND has identical pinout and signal definitions to both the 2716 EPROM and 2816 EEPROM, enabling direct socket replacement in legacy systems. Address lines A0–A10, data lines DQ0–DQ7, and control signals CE, WE, OE, V_CC, and GND map one-to-one, allowing hardware reuse without PCB modification.

What is the operating voltage range and tolerance specification for DS1220AB-100IND?

The DS1220AB-100IND operates over a V_CC range of 4.75 V to 5.25 V, corresponding to a ±5% tolerance around nominal 5 V. Full functional operation-including read, write, and automatic backup activation-is specified across this range. Write protection triggers at V_TP = 4.5 V to 4.75 V, ensuring robustness against marginal supply conditions.

How does DS1220AB-100IND handle power-down and power-up transitions?

During power-down, DS1220AB-100IND detects V_CC decay below 4.5 V within 1.5 µs, disables all inputs, places outputs in high-Z, and connects the lithium source to RAM within 300 µs. At power-up, it reconnects V_CC to RAM and disconnects the battery once V_CC exceeds ~3.0 V, resuming full SRAM operation after V_CC stabilizes above 4.75 V - all without software intervention.

DS1220AB-100IND Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 24-DIP Module (0.600", 15.24mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 16Kbit

Memory Organization:: 2K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 100ns

Access Time:: 100 ns

Voltage - Supply:: 4.75V ~ 5.25V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 24-EDIP

DS1220AB-100IND FAQ

1.How can I place an order for DS1220AB-100IND through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1220AB-100IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1220AB-100IND reliable?

The price and inventory of DS1220AB-100IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1220AB-100IND is usually 5 days.

3.What payment methods are accepted for DS1220AB-100IND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1220AB-100IND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1220AB-100IND?

DS1220AB-100IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1220AB-100IND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1220AB-100IND?

For technical support, including DS1220AB-100IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1220AB-100IND requirements.

6.How does Aetrix verify that DS1220AB-100IND is sourced from the original manufacturer or authorized distributors?

All DS1220AB-100IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1220AB-100IND meets industry standards.

7.What is the process for return or replacement of DS1220AB-100IND?

All DS1220AB-100IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1220AB-100IND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1220AB-100IND part is unused and in its original packaging.

Return procedure for DS1220AB-100IND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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