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Analog Devices Inc./Maxim Integrated DS1220AB-150IND
- Part No.:
- DS1220AB-150IND
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 24-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1220AB-150IND.pdf
- Description:
- IC NVSRAM 16KBIT PARALLEL 24EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:4,360
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Product details
Overview
DS1220AB-150IND from Maxim Integrated (now Analog Devices) is a 16k nonvolatile static RAM organized as 2048 × 8 bits, featuring integrated lithium battery backup, automatic write protection during power loss, and 100 ns read/write access time. It directly replaces 2k × 8 volatile SRAMs and EEPROMs in industrial control, data loggers, and metering systems requiring persistent memory without external support circuitry.
For engineers reviewing the DS1220AB-150IND datasheet, DS1220AB-150IND pinout, DS1220AB-150IND application, or DS1220AB-150IND equivalent, key selection criteria include its ±5% VCC tolerance, industrial temperature range (–40°C to +85°C), JEDEC-standard 24-pin extended DIP package, and guaranteed 10-year data retention without external power.
Technical Context
The DS1220AB-150IND implements a self-contained power-fail detection and switchover architecture: when VCC drops below 4.5 V (VTP), it unconditionally enables write protection, disables inputs, places outputs in high-Z, and connects the internal lithium cell to retain RAM contents. The device operates fully within 4.75 V to 5.25 V and maintains data integrity across full industrial thermal cycling.
Its timing behavior conforms strictly to standard SRAM protocols-read cycles require CE and OE low with WE high; write cycles require CE and WE low-and supports unlimited write cycles with no wear leveling or erase overhead. All DC and AC specifications-including tACC = 100 ns, ICCO1 = 85 mA (industrial), and IIL/IIO ≤ ±1.0 µA-are validated over –40°C to +85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16,384-bit (2048 × 8) nonvolatile SRAM with integrated lithium backup |
| Access Time | 100 ns maximum-enables direct drop-in replacement for legacy 2k × 8 SRAMs in 80Cxx/808x-based systems |
| VCC Range | 4.75 V to 5.25 V (±5%)-supports stable operation under noisy industrial power rails |
| Data Retention | 10 years minimum without external power-guaranteed by design, independent of thermal cycling |
| Operating Temp | –40°C to +85°C-qualified for industrial environments including energy meters and PLC backplanes |
| Write Cycles | Unlimited-no endurance limit or write-delay constraints, unlike EEPROM or Flash |
| Package | 24-pin 720-mil extended DIP (EDIP)-JEDEC-compliant, compatible with 2716 EPROM and 2816 EEPROM footprints |
Pinout & Package
DS1220AB-150IND uses a 24-pin 720-mil extended dual in-line package (EDIP) with through-hole mounting and wave/hand-solder compatibility. Pin 1 is marked with a notch or dot; pin numbering follows standard JEDEC DIP convention (counterclockwise from notch).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus supporting full 2048-word addressing; TTL-compatible input thresholds |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus with high-impedance tri-state outputs controlled by CE/OE |
| CE | Chip Enable | Active-low chip select; initiates read/write when low; controls standby current (ICCS2 = 3–5 mA) |
| WE | Write Enable | Active-low write strobe; determines write start/stop edges with CE; disables outputs when asserted during reads |
| OE | Output Enable | Active-low output enable; used only during reads; ensures bus isolation during writes |
| VCC | Power Supply | +5 V ±5% supply input; monitored continuously for VTP (4.5–4.75 V) fail detection |
| GND | Ground | Reference return path for all signals and internal lithium switch circuitry |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Protection | Hardware-level VCC monitoring triggers immediate write protect and lithium switchover at ~3.0 V, eliminating firmware dependency |
| Freshness Seal | Lithium cell remains electrically disconnected until first VCC application > VTP, preserving full 10-year retention capacity |
| Direct Pin Compatibility | Matches 24-pin DIP footprint and signal mapping of 2716 EPROM and 2816 EEPROM-no PCB redesign needed |
| Zero-Overhead Nonvolatility | No external capacitors, controllers, or software drivers required-functions as drop-in SRAM with battery backup |
| Industrial Temperature Qualification | Full DC/AC specs guaranteed from –40°C to +85°C, including tACC = 100 ns and ICCO1 = 85 mA |
Applications
| Energy Metering | Industrial PLCs |
|---|---|
Use Scenario: Storing tariff schedules, consumption logs, and tamper-event timestamps in smart electricity meters deployed outdoors. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing instant-write, zero-latency memory for critical billing data during grid brownouts. Use Value: Guarantees 10-year data retention without supercapacitors or external battery management, reducing BOM cost and field failure risk. | Use Scenario: Holding ladder logic state, I/O configuration, and diagnostic history in programmable logic controllers operating in factory environments. IC Role / Device Role / Timing Role: Battery-backed RAM preserving runtime context across unexpected main power loss or maintenance shutdowns. Use Value: Enables deterministic restart without reinitialization or configuration reload-critical for safety-critical automation sequences. |
| Medical Data Recorders | Avionics Black Boxes |
Use Scenario: Capturing real-time patient vitals and alarm histories in portable ECG monitors subject to intermittent battery swaps. IC Role / Device Role / Timing Role: High-reliability memory buffer that retains last 2048 samples even during complete power removal. Use Value: Meets IEC 60601-1 data integrity requirements without adding watchdog timers or redundant storage layers. | Use Scenario: Recording flight parameters and cockpit voice in aircraft crash-survivable recorders exposed to extreme thermal shock. IC Role / Device Role / Timing Role: Industrial-grade NV SRAM maintaining valid data through rapid VCC collapse and post-crash thermal soak. Use Value: Qualified for –40°C to +85°C operation with guaranteed 100 ns access-enabling real-time capture at 10 kHz sample rates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1220AD-150IND+ | Wider VCC tolerance (±10%, 4.5–5.5 V) vs. DS1220AB-150IND's ±5% (4.75–5.25 V); lower VTP (4.25–4.5 V) | Better suited for systems with unstable or wide-tolerance 5 V rails; slightly reduced noise margin on write-protect threshold | Select DS1220AD-150IND+ if supply regulation is marginal; otherwise DS1220AB-150IND offers tighter voltage control for precision systems. |
| STK12C68-55I | Same 16k × 8 organization and 24-pin DIP, but uses capacitor-based backup (not lithium); 55 ns access time; max 10-year retention dependent on capacitor health | Lower cost, but requires external backup capacitor and suffers from capacitance aging; not qualified for full industrial temp range | Choose STK12C68-55I only for commercial-temp, cost-sensitive designs where long-term reliability is secondary to upfront BOM savings. |
Compared with DS1220AD-150IND+ and STK12C68-55I, DS1220AB-150IND delivers tighter VCC regulation (±5%), higher write-protect threshold (4.5 V), and guaranteed lithium-based 10-year retention across –40°C to +85°C-making it optimal for mission-critical industrial memory where voltage stability and lifetime predictability are mandatory.
Availability
DS1220AB-150IND is available at Aetrix Electronics and suitable for industrial control systems, smart metering infrastructure, and medical data loggers requiring stable component supply, long-lifecycle assurance, and RoHS-compliant through-hole packaging.
Supply support for DS1220AB-150IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (acquired by Analog Devices in 2021) is a semiconductor company specializing in high-performance analog, mixed-signal, and power management ICs for industrial, automotive, and communications markets.
The DS1220AB-150IND belongs to Maxim's legacy nonvolatile SRAM product line, designed specifically to eliminate external battery management and provide plug-and-play memory persistence in harsh, power-unstable environments.
FAQ
What is the guaranteed data retention period for DS1220AB-150IND?
The DS1220AB-150IND guarantees a minimum 10-year data retention period in the absence of external power, starting from the moment VCC is first applied and the internal lithium cell is activated. This specification is design-guaranteed and applies across the full industrial temperature range (–40°C to +85°C), with no derating required for thermal cycling or storage duration.
Does DS1220AB-150IND require external components for battery backup operation?
No, DS1220AB-150IND requires no external components for battery backup operation. Its integrated lithium energy source and power-fail detection circuitry are fully self-contained. The lithium cell remains electrically disconnected until first power-up, ensuring full capacity retention. No capacitors, diodes, or supervisory ICs are needed-DS1220AB-150IND functions as a true drop-in SRAM replacement.
What is the VCC operating range and write-protection threshold for DS1220AB-150IND?
DS1220AB-150IND operates over VCC = 4.75 V to 5.25 V (±5%). Its write-protection voltage (VTP) is specified as 4.5 V to 4.75 V-meaning the device automatically enters write-protected mode when VCC falls within or below this range. This ensures data integrity before supply collapse reaches critical levels.
Is DS1220AB-150IND pin-compatible with standard EPROM or EEPROM devices?
Yes, DS1220AB-150IND uses a JEDEC-standard 24-pin extended DIP package and matches the pinout of the 2716 EPROM and 2816 EEPROM. Address lines (A0–A10), data lines (DQ0–DQ7), and control signals (CE, OE, WE) align exactly-enabling direct hardware substitution without PCB modification or firmware changes.
How does DS1220AB-150IND handle power-down and power-up transitions?
During power-down, DS1220AB-150IND detects VCC decay via internal monitoring and switches to lithium backup within 1.5 µs (tPD). At ~3.0 V, it disconnects VCC, enables write protection, and places all outputs in high-Z. During power-up, it reconnects VCC and isolates the lithium cell once VCC exceeds ~3.0 V, resuming normal operation after VCC stabilizes above 4.75 V.
DS1220AB-150IND Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 24-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 150ns
- Access Time:
- 150 ns
- Voltage - Supply:
- 4.75V ~ 5.25V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-EDIP
DS1220AB-150IND FAQ
1.How can I place an order for DS1220AB-150IND through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1220AB-150IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1220AB-150IND reliable?
The price and inventory of DS1220AB-150IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1220AB-150IND is usually 5 days.
3.What payment methods are accepted for DS1220AB-150IND?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1220AB-150IND transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1220AB-150IND?
DS1220AB-150IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1220AB-150IND order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1220AB-150IND?
For technical support, including DS1220AB-150IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1220AB-150IND requirements.
6.How does Aetrix verify that DS1220AB-150IND is sourced from the original manufacturer or authorized distributors?
All DS1220AB-150IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1220AB-150IND meets industry standards.
7.What is the process for return or replacement of DS1220AB-150IND?
All DS1220AB-150IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1220AB-150IND, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1220AB-150IND part is unused and in its original packaging.
Return procedure for DS1220AB-150IND:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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