Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1220AB-200IND

Name: DS1220AB-200IND
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1220AB-200IND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: DS1220AB-200IND

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 24-DIP Module (0.600", 15.24mm)

Datasheet:: DS1220AB-200IND.pdf

Description:: IC NVSRAM 16KBIT PARALLEL 24EDIP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,920

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

DS1220AB-200IND from Maxim Integrated (now Analog Devices) is a 16k nonvolatile static RAM organized as 2048 × 8 bits, featuring integrated lithium battery backup, automatic power-loss write protection, and JEDEC-standard 24-pin extended DIP packaging. It delivers 100 ns read/write access time, operates over -40°C to +85°C, and replaces volatile SRAM or EEPROM in mission-critical data logging systems.

For engineers reviewing the DS1220AB-200IND datasheet, DS1220AB-200IND pinout, DS1220AB-200IND application, or DS1220AB-200IND equivalent, key selection criteria include guaranteed 10-year data retention without external power, ±5% V_CC tolerance, industrial temperature rating, and direct compatibility with 2716 EPROM/2816 EEPROM footprints.

Technical Context

The DS1220AB-200IND implements autonomous voltage monitoring via an internal comparator that triggers at V_TP = 4.5–4.75 V, switching to lithium backup when V_CC falls below ~3.0 V. Its control circuitry forces CE and WE inactive within 1.5 µs of V_CC failure, placing all I/O in high-impedance and disabling writes unconditionally.

It uses CMOS-compatible TTL-level inputs (V_IL ≤ 0.8 V, V_IH ≥ 2.2 V), supports full bus interfacing without external support circuitry, and maintains data integrity during power cycling by electrically isolating the lithium cell until first power application - preserving full energy capacity.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	16,384-bit (2048 × 8), directly substitutes 2k × 8 SRAM/EEPROM in existing designs
Access Time	100 ns read/write - enables integration into 10 MHz bus systems without wait states
V_CC Tolerance	±5% (4.75 V to 5.25 V) - ensures stable operation under regulated 5 V supply variations
Data Retention	10 years minimum without power - guaranteed by design, no periodic refresh required
Operating Temp	-40°C to +85°C (IND grade) - qualified for industrial control, avionics, and telecom infrastructure
Write Cycles	Unlimited - eliminates wear-out concerns in frequent-write applications like event logging
Package	24-pin 720-mil extended DIP - matches 2716 EPROM/2816 EEPROM pinout for drop-in replacement

Pinout & Package

DS1220AB-200IND is housed in a 24-pin extended dual in-line package (EDIP), 720 mil width, RoHS-compliant (indicated by '+' suffix). The package includes internal lithium cell, voltage monitor, and power-switching circuitry - no external components needed for nonvolatile operation.

Pin/Terminal	Circuit Role	Design Meaning
A0–A10	Address Inputs	11-bit address bus supporting full 2048-word addressing; compatible with standard microprocessor address lines
DQ0–DQ7	Data I/O	Bidirectional 8-bit data bus; high-impedance outputs during write or chip disable to prevent bus contention
CE	Chip Enable	Active-low chip select; must be low with WE low for write, or with OE low for read; controls power-down entry timing
WE	Write Enable	Active-low write strobe; falling edge initiates write cycle; rising edge triggers t_WR recovery before next access
OE	Output Enable	Active-low output enable; kept high during writes to avoid contention; determines t_OE timing for read access
V_CC	Power Supply	+5 V ±5% input; monitored continuously; triggers automatic lithium switchover below ~3.0 V
GND	Ground	Reference node for all signals and internal circuitry; requires low-impedance connection for reliable power-fail detection

Key Features

Feature	Design Value
Automatic Power-Fail Protection	Monitors V_CC in real time and switches to lithium backup within 1.5 µs of out-of-tolerance condition - prevents data corruption during brownouts
Freshness Seal	Lithium cell remains electrically disconnected until first V_CC application > V_TP, ensuring full 10-year retention capacity from initial use
Direct Pin Compatibility	Identical pinout to 2716 EPROM and 2816 EEPROM - allows hardware reuse without PCB redesign
No External Support Circuitry	Integrates voltage monitor, power switch, and backup controller - eliminates discrete diodes, capacitors, or supervisor ICs

Applications

Industrial Data Logger	Avionics Black Box Recorder
Use Scenario: Continuous timestamped sensor data capture in programmable logic controllers with infrequent power cycles. IC Role / Device Role / Timing Role: Nonvolatile memory buffer storing critical operational history; retains data across unexpected mains loss or battery depletion. Use Value: Eliminates need for external EEPROM write-cycle management or battery-backed RTC coordination - simplifies firmware and reduces BOM count.	Use Scenario: Crash-protected flight parameter storage in unmanned aerial vehicles operating in extreme thermal environments. IC Role / Device Role / Timing Role: Primary nonvolatile storage for accelerometer, GPS, and attitude data; activated only during power interruption or shutdown sequence. Use Value: Guarantees 10-year data retention without maintenance, meeting DO-160E environmental compliance for airborne equipment.
Medical Infusion Pump Memory	Telecom Base Station Configuration Store
Use Scenario: Storing calibration coefficients, dosage logs, and safety audit trails in Class II medical devices requiring FDA 21 CFR Part 11 compliance. IC Role / Device Role / Timing Role: Tamper-resistant, write-protected memory holding immutable treatment records; powered exclusively by internal lithium during AC failure. Use Value: Meets IEC 62304 software lifecycle requirements by eliminating volatile memory dependency and enabling deterministic power-loss response.	Use Scenario: Preserving baseband configuration, neighbor-cell lists, and encryption keys in outdoor macrocell radios exposed to -40°C winter conditions. IC Role / Device Role / Timing Role: Industrial-grade NV SRAM maintaining operational state across grid outages and generator switchover events. Use Value: Avoids re-synchronization delays after power restoration - maintains network uptime and reduces O&M overhead.

Industrial Data Logger

Avionics Black Box Recorder

Use Scenario: Continuous timestamped sensor data capture in programmable logic controllers with infrequent power cycles.

IC Role / Device Role / Timing Role: Nonvolatile memory buffer storing critical operational history; retains data across unexpected mains loss or battery depletion.

Use Value: Eliminates need for external EEPROM write-cycle management or battery-backed RTC coordination - simplifies firmware and reduces BOM count.

Use Scenario: Crash-protected flight parameter storage in unmanned aerial vehicles operating in extreme thermal environments.

IC Role / Device Role / Timing Role: Primary nonvolatile storage for accelerometer, GPS, and attitude data; activated only during power interruption or shutdown sequence.

Use Value: Guarantees 10-year data retention without maintenance, meeting DO-160E environmental compliance for airborne equipment.

Medical Infusion Pump Memory

Telecom Base Station Configuration Store

Use Scenario: Storing calibration coefficients, dosage logs, and safety audit trails in Class II medical devices requiring FDA 21 CFR Part 11 compliance.

IC Role / Device Role / Timing Role: Tamper-resistant, write-protected memory holding immutable treatment records; powered exclusively by internal lithium during AC failure.

Use Value: Meets IEC 62304 software lifecycle requirements by eliminating volatile memory dependency and enabling deterministic power-loss response.

Use Scenario: Preserving baseband configuration, neighbor-cell lists, and encryption keys in outdoor macrocell radios exposed to -40°C winter conditions.

IC Role / Device Role / Timing Role: Industrial-grade NV SRAM maintaining operational state across grid outages and generator switchover events.

Use Value: Avoids re-synchronization delays after power restoration - maintains network uptime and reduces O&M overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1220AD-100IND+	Wider V_CC tolerance (±10%, 4.5–5.5 V); lower V_TP (4.25–4.5 V); same pinout, retention, and temp range	Better suited for unregulated or wide-input DC-DC systems where 5 V rail may dip below 4.75 V	Select DS1220AD-100IND+ if system V_CC varies beyond ±5%; otherwise DS1220AB-200IND offers tighter regulation margin
MAX6900AEN+	Serial I²C interface; 1 kbit EEPROM; no internal battery; external backup required; SO-8 package	Lower density, serial interface, no autonomous power-fail response - requires host MCU intervention	Choose MAX6900AEN+ only for space-constrained designs where serial interface and lower cost outweigh need for autonomous backup and parallel bus speed

Compared with DS1220AD-100IND+, the DS1220AB-200IND provides stricter V_CC regulation assurance and higher write-protection threshold, while MAX6900AEN+ trades autonomy and speed for footprint reduction and interface flexibility - making DS1220AB-200IND optimal for legacy parallel-bus industrial systems demanding guaranteed data integrity.

Availability

DS1220AB-200IND is available at Aetrix Electronics and suitable for industrial data loggers, avionics recorders, and medical infusion pumps requiring stable component supply, long-term data retention, and guaranteed industrial temperature performance.

Supply support for DS1220AB-200IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (acquired by Analog Devices in 2021) is a semiconductor company specializing in analog, mixed-signal, and power-management ICs for industrial, automotive, and communications markets.

The DS1220AB-200IND belongs to Maxim's nonvolatile SRAM product line, engineered specifically for systems where data persistence during power loss is non-negotiable - targeting applications in instrumentation, aerospace, and life-critical equipment.

FAQ

What is the guaranteed data retention period for DS1220AB-200IND?

The DS1220AB-200IND guarantees a minimum 10-year data retention period in the absence of external power, starting from the moment V_CC is first applied. This is ensured by the internal lithium energy source, which remains disconnected until initial power-up to preserve full capacity - a design guarantee confirmed in the datasheet's Note 9 and Absolute Maximum Ratings section.

Does DS1220AB-200IND require external circuitry for battery backup operation?

No, DS1220AB-200IND requires no external components for nonvolatile operation. It integrates a lithium cell, voltage monitor, and automatic power-switching circuitry. The device self-manages transition to battery backup when V_CC drops below ~3.0 V and reverts to main supply on power-up - eliminating need for external supervisors, diodes, or capacitors.

Is DS1220AB-200IND pin-compatible with standard EPROM or EEPROM devices?

Yes, DS1220AB-200IND uses the JEDEC-standard 24-pin DIP footprint and matches the pinout of the 2716 EPROM and 2816 EEPROM. This enables direct substitution in existing sockets without PCB modification - verified in the Pin Assignment and Description sections of the official datasheet.

What is the operating voltage range for DS1220AB-200IND?

The DS1220AB-200IND operates over V_CC = 4.75 V to 5.25 V (±5%), with write protection triggered between 4.5 V and 4.75 V. This tighter tolerance compared to the DS1220AD variant ensures robust behavior in well-regulated 5 V systems, as specified in the Recommended DC Operating Conditions table.

How does DS1220AB-200IND handle power-down transitions?

During power-down, DS1220AB-200IND detects V_CC decay via internal monitoring and disables CE and WE within 1.5 µs (t_PD). All inputs become "don't care", outputs go high-impedance, and the lithium source connects to retain RAM contents - a fully autonomous process documented in the Power-Down/Power-Up Condition section.

DS1220AB-200IND Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 24-DIP Module (0.600", 15.24mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 16Kbit

Memory Organization:: 2K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 200ns

Access Time:: 200 ns

Voltage - Supply:: 4.75V ~ 5.25V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 24-EDIP

DS1220AB-200IND FAQ

1.How can I place an order for DS1220AB-200IND through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1220AB-200IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1220AB-200IND reliable?

The price and inventory of DS1220AB-200IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1220AB-200IND is usually 5 days.

3.What payment methods are accepted for DS1220AB-200IND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1220AB-200IND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1220AB-200IND?

DS1220AB-200IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1220AB-200IND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1220AB-200IND?

For technical support, including DS1220AB-200IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1220AB-200IND requirements.

6.How does Aetrix verify that DS1220AB-200IND is sourced from the original manufacturer or authorized distributors?

All DS1220AB-200IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1220AB-200IND meets industry standards.

7.What is the process for return or replacement of DS1220AB-200IND?

All DS1220AB-200IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1220AB-200IND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1220AB-200IND part is unused and in its original packaging.

Return procedure for DS1220AB-200IND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …