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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1225AB-200IND

Name: DS1225AB-200IND
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1225AB-200IND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1225AB-200IND

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 28-DIP Module (0.600", 15.24mm)

Datasheet:: DS1225AB-200IND.pdf

Description:: IC NVSRAM 64KBIT PARALLEL 28EDIP

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Product details

Overview

DS1225AB-200IND from Maxim Integrated is a 64kbit (8k × 8) nonvolatile static RAM with integrated lithium battery backup, JEDEC-standard 28-pin extended DIP package, 70 ns read/write access time, ±5% V_CC tolerance (4.75–5.25 V), and industrial temperature range (–40°C to +85°C). It replaces volatile SRAMs or EEPROMs in data-logging, metering, and configuration storage applications without external support circuitry.

For engineers reviewing the DS1225AB-200IND datasheet, DS1225AB-200IND pinout, DS1225AB-200IND application, or DS1225AB-200IND equivalent, key selection criteria include guaranteed 10-year data retention during power loss, automatic write protection below 4.5 V, unlimited write cycles, low-power CMOS operation, and direct compatibility with 2764 EPROM/2864 EEPROM footprints.

Technical Context

The DS1225AB-200IND integrates self-contained lithium energy source and voltage-monitoring circuitry that detects V_CC decay below 4.5 V and automatically switches to battery backup while enabling unconditional write protection. All inputs become "don't care" and outputs go high-impedance during power failure.

It operates as a fully static, byte-wide parallel memory with standard SRAM timing: CE/OE/WE control logic, 13 address lines (A0–A12), 8 bidirectional data lines (DQ0–DQ7), and no wait states. The device requires no external capacitors, regulators, or firmware intervention for nonvolatility management.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	65,536 bits (8,192 × 8), directly substituting 8k × 8 SRAM/EPROM/EEPROM
Access Time	70 ns - enables use with 14 MHz bus systems without wait states
V_CC Range	4.75 V to 5.25 V (±5%) - supports stable operation across standard 5 V rail tolerances
Data Retention	10 years minimum without external power - guaranteed by internal lithium cell and sealed packaging
Operating Temp	–40°C to +85°C (IND grade) - qualified for industrial control, utility metering, and embedded telemetry
Write Cycles	Unlimited - eliminates wear-out concerns in frequent-configuration-update systems
Package	28-pin 720-mil extended DIP - compatible with legacy through-hole PCB layouts and socketing

Pinout & Package

DS1225AB-200IND uses a JEDEC-standard 28-pin extended dual in-line package (EDIP), 720 mil width, with through-hole mounting and wave/hand-solderable leads per Maxim's package drawing MDT28+2 (Outline No. 21-0245).

Pin/Terminal	Circuit Role	Design Meaning
A0–A12	Address Inputs	13-bit address bus for selecting one of 8,192 memory locations
DQ0–DQ7	Bidirectional Data I/O	8-bit parallel data path; high-impedance when disabled by CE/OE
CE	Chip Enable	Active-low chip select; disables all outputs and reduces standby current when high
WE	Write Enable	Active-low write strobe; controls data latching and output driver disable during writes
OE	Output Enable	Active-low output enable; allows read data to drive bus only when CE and OE are both low
V_CC	Power Supply	+5 V ±5% main supply; powers logic and RAM core; triggers lithium activation on first power-up
GND	Ground	Reference return for all signals and internal switching circuitry
NC	No Connect	Pins 14 and 24 are unconnected; must remain floating per datasheet

Key Features

Feature	Design Value
Automatic Power-Fail Detection	Monitors V_CC continuously; initiates write protection and battery switchover within 1.5 µs when voltage drops below 4.5 V
Freshness Seal	Lithium cell electrically disconnected until first V_CC application > V_TP, preserving full 10-year capacity
Direct Pin Compatibility	Matches pinout of 2764 EPROM and 2864 EEPROM - enables drop-in replacement without PCB redesign
Zero External Support Circuitry	Requires no external capacitors, regulators, or firmware drivers - simplifies BOM and layout
Industrial Temperature Qualification	Tested and guaranteed over –40°C to +85°C - suitable for uncontrolled environmental deployments

Applications

Smart Energy Metering	Industrial PLC Configuration Storage
Use Scenario: Storing tariff schedules, consumption logs, and tamper-event timestamps in electricity meters deployed outdoors or in substations. IC Role / Device Role / Timing Role: Nonvolatile configuration and event-logging memory with guaranteed data integrity during grid brownouts or battery swaps. Use Value: Eliminates need for external EEPROM + supervisor IC, reducing component count while ensuring 10-year retention without maintenance.	Use Scenario: Retaining ladder logic parameters, I/O mapping, and calibration coefficients in programmable logic controllers operating in factory environments. IC Role / Device Role / Timing Role: Fault-tolerant SRAM buffer that preserves runtime state and configuration across unexpected AC power interruptions. Use Value: Enables deterministic restart after power recovery with zero data loss, meeting IEC 61131-2 reliability requirements.
Medical Device Calibration Storage	Avionics Black Box Parameter Logging
Use Scenario: Holding sensor calibration constants and usage history in portable diagnostic equipment subject to periodic sterilization and battery cycling. IC Role / Device Role / Timing Role: Secure, long-term nonvolatile memory with immunity to write endurance limits and voltage transients. Use Value: Supports FDA-required traceability and recalibration intervals without risk of bit corruption or cycle exhaustion.	Use Scenario: Recording flight control parameters and system health metrics in airborne recorders where power may be interrupted mid-flight. IC Role / Device Role / Timing Role: High-reliability data capture memory with sub-microsecond failover to lithium backup during generator or bus failure. Use Value: Meets DO-160 Section 22 crash-survivable power interruption requirements with no external supervision.

Smart Energy Metering

Industrial PLC Configuration Storage

Use Scenario: Storing tariff schedules, consumption logs, and tamper-event timestamps in electricity meters deployed outdoors or in substations.

IC Role / Device Role / Timing Role: Nonvolatile configuration and event-logging memory with guaranteed data integrity during grid brownouts or battery swaps.

Use Value: Eliminates need for external EEPROM + supervisor IC, reducing component count while ensuring 10-year retention without maintenance.

Use Scenario: Retaining ladder logic parameters, I/O mapping, and calibration coefficients in programmable logic controllers operating in factory environments.

IC Role / Device Role / Timing Role: Fault-tolerant SRAM buffer that preserves runtime state and configuration across unexpected AC power interruptions.

Use Value: Enables deterministic restart after power recovery with zero data loss, meeting IEC 61131-2 reliability requirements.

Medical Device Calibration Storage

Avionics Black Box Parameter Logging

Use Scenario: Holding sensor calibration constants and usage history in portable diagnostic equipment subject to periodic sterilization and battery cycling.

IC Role / Device Role / Timing Role: Secure, long-term nonvolatile memory with immunity to write endurance limits and voltage transients.

Use Value: Supports FDA-required traceability and recalibration intervals without risk of bit corruption or cycle exhaustion.

Use Scenario: Recording flight control parameters and system health metrics in airborne recorders where power may be interrupted mid-flight.

IC Role / Device Role / Timing Role: High-reliability data capture memory with sub-microsecond failover to lithium backup during generator or bus failure.

Use Value: Meets DO-160 Section 22 crash-survivable power interruption requirements with no external supervision.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1225AD-70IND+	Wider V_CC range (4.5–5.5 V, ±10%), lower write-protection threshold (4.25 V)	Better suited for noisy or loosely regulated 5 V supplies; slightly reduced noise margin at low V_CC	Select DS1225AD-70IND+ if system V_CC varies beyond ±5% or requires earlier backup activation
STK12C68-AW50I	Same 8k × 8 NV SRAM architecture, 50 ns access, but uses capacitor-based backup (no lithium)	Shorter retention (up to 72 hours without power); requires external capacitor and charge circuit	Choose STK12C68-AW50I only if lithium-free design is mandated and short-term retention suffices

Compared with DS1225AD-70IND+, the DS1225AB-200IND offers tighter V_CC regulation and higher write-protection voltage-critical for stable 5 V systems-while STK12C68-AW50I trades long-term retention for RoHS-compliant, capacitor-based backup requiring additional board space and charge management.

Availability

DS1225AB-200IND is available at Aetrix Electronics and suitable for smart metering, industrial PLCs, medical calibration storage, and avionics black box logging requiring stable component supply, long-lifecycle assurance, and industrial-grade temperature performance.

Supply support for DS1225AB-200IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in analog, mixed-signal, and power-management ICs for industrial, automotive, and communications applications.

The DS1225AB-200IND belongs to Maxim's nonvolatile SRAM product line, designed specifically for systems requiring seamless, maintenance-free data retention during unpredictable power loss without external supervision or firmware overhead.

FAQ

What is the guaranteed data retention period for DS1225AB-200IND?

The DS1225AB-200IND guarantees a minimum of 10 years of data retention in the absence of external power, based on its integrated lithium energy source and hermetically sealed construction. This retention period begins upon first application of V_CC and accumulates only during power-off intervals. The device's freshness seal ensures full battery capacity is preserved until initial power-up, and the specification is guaranteed by design-not statistical sampling.

Does DS1225AB-200IND require external components to function as nonvolatile memory?

No, DS1225AB-200IND requires no external capacitors, regulators, supervisors, or firmware drivers to deliver nonvolatile operation. Its integrated lithium cell, voltage-monitoring circuitry, and automatic power-fail switchover are fully self-contained. Only standard 5 V ±5% supply, ground, address/data/control signals, and proper PCB layout per Maxim's land pattern MDT28+2 are needed for full functionality.

How does DS1225AB-200IND handle power failure during a write operation?

During a power failure, DS1225AB-200IND detects V_CC decay below 4.5 V within 1.5 µs and immediately disables write capability by asserting unconditional write protection. All address and data inputs become "don't care," outputs enter high-impedance state, and the lithium source powers the RAM core to preserve contents. This prevents partial writes or data corruption even if V_CC collapses mid-cycle.

Is DS1225AB-200IND pin-compatible with standard EPROM or EEPROM devices?

Yes, DS1225AB-200IND uses the same 28-pin DIP footprint and pinout as the 2764 EPROM and 2864 EEPROM, enabling direct substitution in existing designs. Address lines A0–A12, data lines DQ0–DQ7, and control signals CE, OE, and WE align exactly-no PCB modification or adapter is required to replace those legacy devices with DS1225AB-200IND.

What is the difference between DS1225AB-200IND and DS1225AD-200IND?

The DS1225AB-200IND specifies a tighter ±5% V_CC tolerance (4.75–5.25 V) and higher write-protection threshold (4.50–4.75 V), whereas DS1225AD-200IND supports ±10% V_CC (4.50–5.50 V) with lower write-protection voltage (4.25–4.50 V). Both share identical 70 ns speed grade, IND temperature range, and pinout-but DS1225AB-200IND is optimized for stable, well-regulated 5 V systems demanding higher noise immunity.

DS1225AB-200IND Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 28-DIP Module (0.600", 15.24mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 64Kbit

Memory Organization:: 8K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 200ns

Access Time:: 200 ns

Voltage - Supply:: 4.75V ~ 5.25V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 28-EDIP

DS1225AB-200IND FAQ

1.How can I place an order for DS1225AB-200IND through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1225AB-200IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1225AB-200IND reliable?

The price and inventory of DS1225AB-200IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1225AB-200IND is usually 5 days.

3.What payment methods are accepted for DS1225AB-200IND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1225AB-200IND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1225AB-200IND?

DS1225AB-200IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1225AB-200IND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1225AB-200IND?

For technical support, including DS1225AB-200IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1225AB-200IND requirements.

6.How does Aetrix verify that DS1225AB-200IND is sourced from the original manufacturer or authorized distributors?

All DS1225AB-200IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1225AB-200IND meets industry standards.

7.What is the process for return or replacement of DS1225AB-200IND?

All DS1225AB-200IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1225AB-200IND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1225AB-200IND part is unused and in its original packaging.

Return procedure for DS1225AB-200IND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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