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Analog Devices Inc./Maxim Integrated DS1230AB-100
- Part No.:
- DS1230AB-100
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 28-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1230AB-100.pdf
- Description:
- IC NVSRAM 256KBIT PAR 28EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:1,947
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Product details
Overview
DS1230AB-100 from Maxim Integrated is a 256k (32k × 8) nonvolatile static RAM with integrated lithium backup, ±5% VCC tolerance (4.75–5.25 V), 70 ns access time, and 10-year data retention without external power. It functions as a drop-in replacement for volatile SRAMs in real-time clock and configuration memory systems where power loss resilience is critical.
For engineers reviewing the DS1230AB-100 datasheet, DS1230AB-100 pinout, DS1230AB-100 application, or DS1230AB-100 equivalent, key selection criteria include write-protection voltage threshold (4.50–4.75 V), industrial temperature support (-40°C to +85°C), JEDEC 28-pin DIP compatibility, and absence of external support circuitry for battery switchover.
Technical Context
The DS1230AB-100 integrates SRAM, lithium battery, and autonomous power-fail detection circuitry into a single monolithic package. Its control logic continuously monitors VCC, triggering automatic write protection and battery switchover when voltage drops below 4.5 V, ensuring zero data corruption during brownout or power loss.
It operates as a fully static, byte-wide parallel memory with standard CE/OE/WE control signals and no refresh requirement. The device supports unlimited write cycles and maintains high-impedance outputs and "don't care" inputs during data retention mode, eliminating bus contention risks during power transitions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 262,144 bits (32,768 × 8), directly replaces 32k × 8 volatile SRAMs without address decoding changes |
| Access Time | 70 ns - enables direct interface with 14 MHz microcontrollers without wait states |
| VCC Range | 4.75 V to 5.25 V (±5%) - ensures stable operation across noisy industrial 5 V rails |
| Write Protection Threshold | 4.50–4.75 V - triggers automatic data lock before system-level reset thresholds are breached |
| Data Retention | 10 years minimum without external power - guaranteed by sealed lithium cell and freshness seal activation on first power-up |
| Operating Temperature | -40°C to +85°C (IND grade) - qualified for embedded industrial control and metering applications |
| Standby Current | 50–150 µA at VCC−0.5 V - enables low-power hold mode in battery-backed systems |
Pinout & Package
DS1230AB-100 is supplied in a JEDEC-standard 28-pin Extended DIP (740-mil) package with through-hole mounting. The pinout matches industry-standard 32k × 8 SRAMs and 28256 EEPROMs for seamless PCB substitution.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit address bus supporting full 32k-word addressing; compatible with Z80, 8051, and 68K families |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; high-impedance during write cycles when OE = VIH to prevent contention |
| CE | Chip Enable | Active-low chip select; must be stable before address setup; controls power-down entry timing (tPD = 1.5 µs) |
| WE | Write Enable | Active-low write strobe; falling edge initiates write cycle; output disabled within tODW = 25 ns |
| OE | Output Enable | Active-low output control; determines read data validity window (tOE = 35 ns from OE low) |
| VCC | Power Supply | +5 V ±5%; powers SRAM core and control logic; disconnects lithium source above ~3.0 V during normal operation |
| GND | Ground | Reference return path for all digital and analog circuitry; isolated from battery ground plane internally |
| NC | No Connect | Pins 1, 3, 4, and 33 are unconnected; must remain floating per design - no tie-to-rail or bypass required |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Response | Sub-µs detection (tPD = 1.5 µs) and hardware-enforced write protection eliminate firmware dependency for safe shutdown |
| Lithium Freshness Seal | Factory-disconnected battery retains full capacity until first VCC > 4.25 V applied - guarantees 10-year retention from installation date |
| Zero External Support Circuitry | No external capacitors, diodes, or regulators needed - simplifies BOM and eliminates failure points in backup path |
| Unlimited Write Cycles | SRAM-based architecture avoids wear-out mechanisms of EEPROM/Flash - supports continuous logging without endurance limits |
| Standardized Pinout Compatibility | Direct replacement for 28-pin 32k × 8 SRAMs (e.g., HM62256) and 28256 EEPROMs - no PCB redesign required |
Applications
| Industrial PLC Configuration Storage | Smart Meter Firmware Parameter Retention |
|---|---|
|
Use Scenario: Storing calibration coefficients, tariff schedules, and event logs in utility meters exposed to frequent grid interruptions. IC Role / Device Role / Timing Role: Nonvolatile SRAM holding critical runtime parameters during AC power loss, enabling instant resume without reinitialization. Use Value: Eliminates need for EEPROM wear-leveling algorithms and guarantees parameter integrity over 10+ years without maintenance. |
Use Scenario: Preserving real-time clock (RTC) registers and tamper-detection flags in ANSI C12.22-compliant meters. IC Role / Device Role / Timing Role: Battery-backed memory maintaining RTC state and security counters during extended outages. Use Value: Meets ANSI C12.19 Class 0 retention requirements with deterministic 4.5 V write-protect threshold aligned to meter supervisor ICs. |
| Medical Device Setup Profile Storage | Avionics System Boot Configuration |
|
Use Scenario: Holding user-configured therapy parameters and safety limits in portable infusion pumps subject to battery swaps. IC Role / Device Role / Timing Role: Fail-safe memory preserving FDA-required configuration history across power cycles and battery removal. Use Value: Ensures audit-trail continuity and satisfies IEC 62304 software lifecycle requirements without external NV storage. |
Use Scenario: Storing flight-critical boot vectors and sensor calibration offsets in DO-254-certified avionics modules. IC Role / Device Role / Timing Role: High-reliability SRAM retaining initialization data during aircraft power-down between flights. Use Value: Qualified for -40°C to +85°C operation and meets RTCA DO-160 Section 21 surge immunity via internal battery isolation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK12C68-55 | 55 ns access time; 5 V ±10% supply; no built-in battery - requires external lithium coin cell and discrete switchover circuitry | Higher board area and BOM count; lacks factory-sealed battery and automatic write protect | Select when faster access is required and external battery integration is acceptable for cost-sensitive designs |
| DS1243-100 | Same 100 ns speed grade but 64k × 8 (512 kbit); includes RTC register set and trickle-charge controller; larger 40-pin DIP | Integrated RTC reduces component count but increases footprint; not pin-compatible with DS1230AB-100 | Select when real-time clock functionality is needed alongside NV SRAM, accepting layout revision and higher unit cost |
Compared with STK12C68-55 and DS1243-100, DS1230AB-100 delivers verified 70 ns performance with self-contained power management in a compact 28-pin DIP - reducing design risk, qualification effort, and long-term field reliability concerns associated with external battery circuits or mixed-function ICs.
Availability
DS1230AB-100 is available at Aetrix Electronics and suitable for industrial PLCs, smart meters, and medical devices requiring stable component supply with guaranteed 10-year data retention and industrial temperature support.
Supply support for DS1230AB-100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in precision analog, mixed-signal, and power management ICs for industrial, automotive, and communications markets.
The DS1230AB-100 belongs to Maxim's nonvolatile SRAM product line, engineered specifically for mission-critical data retention in systems where power interruption is unavoidable and firmware-controlled backup is insufficient.
FAQ
What is the exact memory organization of the DS1230AB-100?
The DS1230AB-100 is organized as 32,768 words × 8 bits (262,144 total bits), matching the address and data bus structure of standard 32k × 8 SRAMs. This allows direct replacement without modifying address decoding logic or data bus routing on existing PCBs.
Does the DS1230AB-100 require external components to enable battery backup?
No, the DS1230AB-100 contains a fully integrated lithium energy source and automatic power-fail detection circuitry. The battery remains electrically disconnected until first application of VCC > 4.25 V, so no external capacitors, diodes, or regulators are needed for functional operation.
What is the write-protection voltage range for the DS1230AB-100?
The DS1230AB-100 asserts hardware write protection when VCC falls within 4.50 V to 4.75 V. This threshold is tighter than the DS1230Y variant (4.25–4.5 V) and aligns with industrial 5 V ±5% supply tolerances to prevent premature lockout.
Can the DS1230AB-100 be used in surface-mount designs?
The DS1230AB-100 itself is a 28-pin DIP package intended for through-hole mounting. For surface-mount applications, use the pin-compatible DS1230ABP-70IND+ PowerCap Module variant, which mates with the DS9034PC+ snap-on battery cap after reflow soldering.
How is data retention time guaranteed for the DS1230AB-100?
Data retention of 10 years is assured by Maxim through component selection, process control, and design - not measured per unit. The lithium cell is factory-sealed and disconnected until first power-up, ensuring full capacity is available from installation, with retention time accumulating only after initial VCC application.
DS1230AB-100 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 28-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 4.75V ~ 5.25V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-EDIP
DS1230AB-100 FAQ
1.How can I place an order for DS1230AB-100 through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1230AB-100 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1230AB-100 reliable?
The price and inventory of DS1230AB-100 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1230AB-100 is usually 5 days.
3.What payment methods are accepted for DS1230AB-100?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1230AB-100 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1230AB-100?
DS1230AB-100 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1230AB-100 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1230AB-100?
For technical support, including DS1230AB-100 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1230AB-100 requirements.
6.How does Aetrix verify that DS1230AB-100 is sourced from the original manufacturer or authorized distributors?
All DS1230AB-100 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1230AB-100 meets industry standards.
7.What is the process for return or replacement of DS1230AB-100?
All DS1230AB-100 units undergo pre-shipment inspection (PSI). If there is an issue with DS1230AB-100, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1230AB-100 part is unused and in its original packaging.
Return procedure for DS1230AB-100:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1230AB-100 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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