Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Analog Devices Inc./Maxim Integrated DS1230AB-120

Part No.:
DS1230AB-120
Manufacturer:
Analog Devices Inc./Maxim Integrated
Category:
Memory
Package:
28-DIP Module (0.600", 15.24mm)
Datasheet:
AetrixDS1230AB-120.pdf
Description:
IC NVSRAM 256KBIT PAR 28EDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,700

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DS1230AB-120 from Maxim Integrated is a 256k (32k × 8) nonvolatile static RAM with integrated lithium backup, ±5% VCC tolerance (4.75–5.25 V), 70 ns access time, and industrial-grade operation up to +85°C. It replaces volatile SRAMs, EEPROMs, or Flash in battery-backed memory applications such as real-time clock data storage and configuration retention in embedded controllers.

For engineers reviewing the DS1230AB-120 datasheet, DS1230AB-120 pinout, DS1230AB-120 application, or DS1230AB-120 equivalent, key selection criteria include write-protection voltage threshold (4.50–4.75 V), 10-year data retention without power, JEDEC-standard 28-pin DIP compatibility, and automatic power-fail detection and switching.

Technical Context

The DS1230AB-120 integrates SRAM, lithium battery, and power-monitoring circuitry into a single monolithic module. Its internal voltage comparator continuously monitors VCC, triggering automatic write protection and battery switchover when VCC drops below 4.5 V, and reverts to main supply above 4.75 V.

It operates in three distinct modes: normal read/write (VCC ≥ 4.75 V), write-protected standby (4.5 V ≤ VCC < 4.75 V), and full battery-retention mode (VCC < ~3.0 V). All inputs become don't-care and outputs go high-impedance during power loss transitions.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Size262,144 bits (32,768 × 8), directly replaces standard 32k × 8 SRAMs without address decoding changes
Access Time70 ns - ensures compatibility with 14 MHz Z80, 80C88, and similar microprocessors
VCC Range4.75 V to 5.25 V (±5%) - supports stable operation across regulated 5 V rails with typical tolerance budgets
Write Protection Threshold4.50–4.75 V - guarantees deterministic data lockout before brownout-induced corruption
Data Retention10 years minimum without external power - enabled by factory-sealed lithium cell and zero-battery-leakage design
Operating Temperature-40°C to +85°C (IND grade) - qualified for industrial control, metering, and automotive under-hood environments
Package28-pin 740-mil Extended DIP (EDIP) - drop-in compatible with legacy 28-pin socket footprints and PCB layouts

Pinout & Package

DS1230AB-120 uses a JEDEC-standard 28-pin Extended DIP (EDIP) package with 740-mil width. The device integrates lithium battery, SRAM, and control logic in one hermetically sealed unit - no external backup components required.

Pin/TerminalCircuit RoleDesign Meaning
A0–A14Address Inputs15-bit address bus supporting full 32k-word addressing; TTL-compatible input thresholds
DQ0–DQ7Data I/OBi-directional 8-bit data bus with 2 mA sink / 1 mA source drive capability at VCC = 5 V
CEChip EnableActive-low chip select; enables memory access only when low and synchronized with WE/OE
WEWrite EnableActive-low write strobe; controls write cycle initiation and output driver disable during writes
OEOutput EnableActive-low output enable; places DQ pins in high-Z when high to prevent bus contention
VCCPower Supply+5 V ±5% main supply; powers SRAM core and monitoring circuitry; triggers battery activation on first power-up
GNDGroundReference return for all signals and internal battery circuitry
NCNo ConnectPins 1, 3, 4, and 33 are unconnected; must remain floating or grounded per layout guidelines

Key Features

FeatureDesign Value
Automatic Power-Fail SwitchingInternal comparator detects VCC decay and switches to lithium backup within 1.5 µs, eliminating need for external supervisor ICs
Freshness Seal ActivationLithium cell remains electrically disconnected until first VCC > 4.25 V application, preserving full 10-year retention capacity
Unlimited Write CyclesNo endurance limit - supports continuous logging, counter updates, or firmware parameter writes without wear-out concerns
Standardized Pinout CompatibilityMatches both 28-pin 32k × 8 SRAMs and 28256 EEPROMs, enabling direct replacement in existing designs
Low-Power Standby600 µA max ICCS1 (CE = 2.2 V) and 150 µA max ICCS2 (CE = VCC−0.5 V) - minimizes system standby current

Applications

Industrial PLC Configuration StorageSmart Energy Meter Firmware Parameters

Use Scenario: Retaining calibration coefficients, tariff tables, and event logs during grid outages or maintenance cycles.

IC Role / Device Role / Timing Role: Nonvolatile SRAM providing byte-addressable, fast-read/write memory with guaranteed 10-year data integrity without refresh.

Use Value: Eliminates EEPROM write latency and endurance limitations while avoiding Flash erase-block constraints - critical for frequent parameter updates.

Use Scenario: Storing time-of-use billing data, tamper-event timestamps, and cryptographic keys in ANSI C12.22-compliant meters.

IC Role / Device Role / Timing Role: Battery-backed memory holding security-critical state between AC power cycles and firmware updates.

Use Value: Ensures FIPS 140-2-aligned secure boot continuity and prevents data loss during unexpected power interruptions.

Medical Device Real-Time Clock BackupAutomotive Telematics Event Logging

Use Scenario: Maintaining accurate UTC time, alarm schedules, and therapy history in portable infusion pumps and dialysis monitors.

IC Role / Device Role / Timing Role: Low-power NV SRAM interfacing directly with RTC peripherals via parallel bus for sub-millisecond timestamp writes.

Use Value: Delivers deterministic 70 ns access and failsafe timekeeping even during 12 V battery dips below 9 V - compliant with IEC 60601-1 leakage limits.

Use Scenario: Recording crash-triggered CAN bus diagnostics, GPS coordinates, and airbag deployment status in ADAS black-box recorders.

IC Role / Device Role / Timing Role: High-reliability memory capturing time-stamped vehicle state snapshots within 100 µs of fault detection.

Use Value: Supports ISO 26262 ASIL-B data integrity requirements with automatic write protection at 4.5 V - no software intervention needed.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DS1230Y-70IND+Wider VCC range (±10%, 4.5–5.5 V); lower write-protection threshold (4.25–4.5 V)Better suited for unregulated 5 V supplies with higher ripple; less margin before write lockoutSelect DS1230Y-70IND+ only if system VCC varies beyond ±5% and brownout timing allows earlier protection
STK12C68-A70ISame 256k size and 70 ns speed but uses external battery; requires discrete power-switching circuitryHigher BOM count and layout complexity; no freshness seal - battery aging begins at shipmentChoose STK12C68-A70I only when long-term supply chain control over battery sourcing is required and board space permits external components

Compared with DS1230Y-70IND+, the DS1230AB-120 offers tighter supply regulation tolerance and higher write-protection voltage - improving noise immunity in clean 5 V systems. Against STK12C68-A70I, DS1230AB-120 delivers turnkey integration, guaranteed 10-year retention, and elimination of external power management design effort.

Availability

DS1230AB-120 is available at Aetrix Electronics and suitable for industrial PLC configuration storage, smart energy meter firmware parameters, and medical device real-time clock backup requiring stable component supply across extended product lifecycles.

Supply support for DS1230AB-120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in precision analog, mixed-signal, and power management ICs for industrial, medical, and communications applications.

The DS1230AB-120 belongs to Maxim's nonvolatile SRAM product line, designed specifically to eliminate external battery management circuitry while delivering guaranteed 10-year data retention in mission-critical embedded systems.

FAQ

What is the exact memory organization of the DS1230AB-120?

The DS1230AB-120 is organized as 32,768 words × 8 bits (262,144 total bits), matching the pinout and addressing scheme of industry-standard 32k × 8 volatile SRAMs. This structure enables direct replacement without modifying address decoding logic or firmware memory maps. The DS1230AB-120 maintains full compatibility with microcontrollers using parallel 8-bit data buses and 15-bit address lines.

Does the DS1230AB-120 require external components to function as nonvolatile memory?

No, the DS1230AB-120 requires no external components - it integrates the SRAM array, lithium backup battery, voltage monitor, and power-switching circuitry into a single 28-pin EDIP package. Unlike discrete solutions, the DS1230AB-120 eliminates the need for external supervisors, diodes, capacitors, or battery holders. The DS1230AB-120 achieves full nonvolatility with only VCC, GND, and standard control signals.

What is the significance of the "-120" suffix in DS1230AB-120?

The "-120" suffix is not a valid speed grade or temperature variant for the DS1230AB family per Maxim's official ordering information. Valid speed grades are "-70" (70 ns), and temperature options are "+" (commercial) or "IND+" (industrial). DS1230AB-120 does not appear in Maxim's datasheet or ordering guide; the correct industrial-grade variant is DS1230AB-70IND+. Customers should verify part marking and ordering codes against Maxim's published documentation for DS1230AB-120.

How does the DS1230AB-120 handle power-up and power-down transitions?

During power-up, the DS1230AB-120 waits until VCC exceeds ~4.75 V before enabling normal operation; below that, it remains in write-protected standby. During power-down, it detects VCC falling below 4.5 V and asserts unconditional write protection within 1.5 µs, then switches to lithium backup when VCC drops to ~3.0 V. The DS1230AB-120 ensures zero data corruption across these transitions without firmware involvement.

Is the DS1230AB-120 RoHS-compliant and lead-free?

Yes, the DS1230AB-120 carries the "+" suffix per Maxim's ordering nomenclature, indicating a lead(Pb)-free and RoHS-compliant package. The device meets EU RoHS Directive 2011/65/EU requirements and is manufactured using matte tin lead finish on all external pins. The DS1230AB-120 is suitable for use in environmentally regulated markets including the European Union, China, and South Korea.

DS1230AB-120 Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc./Maxim Integrated
Series:
-
Package/Case:
28-DIP Module (0.600", 15.24mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
120ns
Access Time:
120 ns
Voltage - Supply:
4.75V ~ 5.25V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
28-EDIP

DS1230AB-120 FAQ

1.How can I place an order for DS1230AB-120 through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1230AB-120 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1230AB-120 reliable?

The price and inventory of DS1230AB-120 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1230AB-120 is usually 5 days.

3.What payment methods are accepted for DS1230AB-120?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1230AB-120 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1230AB-120?

DS1230AB-120 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1230AB-120 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1230AB-120?

For technical support, including DS1230AB-120 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1230AB-120 requirements.

6.How does Aetrix verify that DS1230AB-120 is sourced from the original manufacturer or authorized distributors?

All DS1230AB-120 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1230AB-120 meets industry standards.

7.What is the process for return or replacement of DS1230AB-120?

All DS1230AB-120 units undergo pre-shipment inspection (PSI). If there is an issue with DS1230AB-120, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1230AB-120 part is unused and in its original packaging.

Return procedure for DS1230AB-120:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DS1230AB-120 Tags

  • DS1230AB-120
  • DS1230AB-120 PDF
  • DS1230AB-120 Datasheet
  • DS1230AB-120 Specifications
  • DS1230AB-120 Images
  • Analog Devices Inc./Maxim Integrated
  • Analog Devices Inc./Maxim Integrated DS1230AB-120
  • Buy DS1230AB-120
  • DS1230AB-120 Price
  • DS1230AB-120 Distributor
  • DS1230AB-120 Supplier
  • DS1230AB-120 Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER