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Analog Devices Inc./Maxim Integrated DS1230AB-120IND
- Part No.:
- DS1230AB-120IND
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 28-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1230AB-120IND.pdf
- Description:
- IC NVSRAM 256KBIT PAR 28EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,065
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Product details
Overview
DS1230AB-120IND from Maxim Integrated is a 256k (32k × 8) nonvolatile static RAM with integrated lithium backup, ±5% VCC tolerance (4.75–5.25 V), 70 ns access time, and industrial temperature rating (–40°C to +85°C). It replaces volatile SRAM, EEPROM, or Flash in battery-backed memory applications requiring data retention without external support circuitry.
For engineers reviewing the DS1230AB-120IND datasheet, DS1230AB-120IND pinout, DS1230AB-120IND application, or DS1230AB-120IND equivalent, key selection criteria include write-protection voltage threshold (4.50–4.75 V), 10-year data retention in power-off mode, JEDEC-standard 28-pin DIP compatibility, and automatic VCC monitoring for seamless battery switchover.
Technical Context
The DS1230AB-120IND integrates SRAM, lithium energy source, and real-time VCC monitoring circuitry in a single monolithic package. Its control logic triggers unconditional write protection when VCC drops below 4.5 V and switches to battery power at ~3.0 V, ensuring zero data corruption during brownout or power loss.
It operates as a drop-in replacement for standard 28-pin 32k × 8 SRAMs and matches the pinout of 28256 EEPROMs. The device supports full asynchronous read/write cycles with CE/OE/WE control and requires no external capacitors, regulators, or supervisory ICs for nonvolatile operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 262,144 bits (32,768 × 8), fully static SRAM organization |
| Access Time | 70 ns - enables direct interface with 14 MHz microprocessors without wait states |
| VCC Range | 4.75 V to 5.25 V (±5%) - supports stable operation across wide supply variation |
| Data Retention | 10 years minimum without external power - guaranteed by sealed lithium cell and freshness seal |
| Write Protection Threshold | 4.50–4.75 V - initiates automatic hardware write lock before data corruption occurs |
| Operating Temperature | –40°C to +85°C (IND grade) - qualified for industrial control, instrumentation, and telecom infrastructure |
| Package | 28-pin 740-mil Extended DIP (EDIP) - JEDEC-standard footprint, wave/hand solderable |
Pinout & Package
DS1230AB-120IND uses a JEDEC-standard 28-pin Extended DIP (740-mil) package. All pins are electrically defined per Maxim's official pin assignment; NC pins are internally unconnected and must remain floating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit address bus supporting full 32k-word addressing; TTL-compatible inputs |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus with 2 mA sink / 1 mA source drive capability |
| CE | Chip Enable | Active-low chip select; controls device enable and write cycle initiation timing |
| WE | Write Enable | Active-low write strobe; determines write start/stop edges with CE for precise timing control |
| OE | Output Enable | Active-low output control; enables high-impedance tri-state during writes or deselect |
| VCC | Power Supply | +5 V ±5% main supply; powers SRAM core and control logic; disconnects lithium on first power-up |
| GND | Ground | Reference return path for all signals and internal circuitry |
| NC | No Connect | Pins 1, 3, 4, and 33 are unconnected; must not be tied to any voltage or signal |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Detection | Monitors VCC continuously; triggers write protection and battery switchover within 1.5 µs of out-of-tolerance detection |
| Lithium Freshness Seal | Energy source remains electrically disconnected until first VCC > 4.25 V application - preserves full 10-year retention capacity |
| Unlimited Write Cycles | No endurance limit - supports continuous logging, configuration storage, and real-time data buffering without wear-out |
| Zero-Support-Circuitry Operation | Requires no external capacitors, supervisors, or backup regulators - reduces BOM count and layout complexity |
| JEDEC Pin-Compatible Replacement | Direct substitute for 28-pin 32k × 8 SRAMs and 28256 EEPROMs - enables legacy design upgrades without PCB revision |
Applications
| Industrial Data Logger | Medical Device Configuration Storage |
|---|---|
|
Use Scenario: Continuous acquisition of sensor readings in remote environmental monitors with intermittent power. IC Role / Device Role / Timing Role: Nonvolatile SRAM holding real-time measurement buffers and calibration tables during AC mains failure. Use Value: Guarantees 10-year data integrity without supercapacitors or external battery management, reducing field maintenance. |
Use Scenario: Storing patient-specific therapy parameters and device calibration constants in portable infusion pumps. IC Role / Device Role / Timing Role: Battery-backed memory preserving critical settings across power cycles and sterilization shutdowns. Use Value: Eliminates EEPROM write delays and endurance concerns while meeting IEC 62304 safety requirements for persistent data. |
| Telecom Base Station Clock Backup | PLC Real-Time Control Memory |
|
Use Scenario: Maintaining time-of-day clock registers and alarm history during grid outages in cellular base station controllers. IC Role / Device Role / Timing Role: Low-latency, deterministic memory backing up RTC registers and event logs with sub-microsecond failover. Use Value: Provides 70 ns access and automatic VCC switchover - avoids NVRAM polling overhead and ensures <1 µs data freeze during brownout. |
Use Scenario: Holding ladder logic state, I/O mapping, and fault history in programmable logic controllers operating in factory environments. IC Role / Device Role / Timing Role: Industrial-grade nonvolatile memory interfacing directly with 8051 or ARM-based PLC CPUs via parallel bus. Use Value: –40°C to +85°C operation and ±5% VCC tolerance ensure reliable retention in unconditioned control cabinets with noisy 5 V rails. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1230Y-70IND+ | Wider VCC range (4.5–5.5 V, ±10%), lower write-protection threshold (4.25–4.5 V) | Better suited for systems with unstable or loosely regulated 5 V supplies; slightly reduced noise margin | Select DS1230Y-70IND+ if supply regulation exceeds ±5%; otherwise DS1230AB-120IND offers tighter voltage control and higher write-lock certainty. |
| STK12C68-AW50I | Same 256k size and 28-pin DIP, but 50 ns access time and CMOS-only process (no integrated lithium) | Requires external battery and discrete supervisor IC; higher board-level integration effort | Choose STK12C68-AW50I only when faster access is mandatory and external backup design is already established. |
Compared with DS1230Y-70IND+, the DS1230AB-120IND provides stricter VCC control and higher write-protection voltage, improving immunity to marginal supply dips; versus STK12C68-AW50I, it delivers true single-package nonvolatility with zero external components, reducing design risk and qualification burden.
Availability
DS1230AB-120IND is available at Aetrix Electronics and suitable for industrial data loggers, medical device configuration storage, and telecom base station clock backup requiring stable component supply, long-lifecycle assurance, and RoHS-compliant packaging.
Supply support for DS1230AB-120IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and nonvolatile memory solutions for demanding industrial, medical, and communications applications.
The DS1230AB-120IND belongs to Maxim's nonvolatile SRAM product line, engineered to eliminate external backup circuitry while delivering guaranteed 10-year data retention in harsh thermal and electrical environments.
FAQ
What is the guaranteed data retention period for DS1230AB-120IND?
The DS1230AB-120IND guarantees a minimum of 10 years of data retention in the absence of external power. This is achieved through an integrated, factory-sealed lithium energy source that remains electrically disconnected until first power application, preserving full capacity. The retention time is assured by component selection, process control, and design-not measured per unit during production testing.
Does DS1230AB-120IND require external support components for nonvolatile operation?
No, the DS1230AB-120IND requires no external capacitors, supervisors, regulators, or backup batteries. Its integrated lithium cell and real-time VCC monitoring circuitry provide autonomous power-fail detection, write protection, and battery switchover. This eliminates BOM additions and simplifies layout compared to discrete SRAM + supervisor + battery solutions.
What is the difference between DS1230AB-120IND and DS1230Y-120IND?
The DS1230AB-120IND operates over a tighter VCC range (4.75–5.25 V, ±5%) and activates write protection at 4.50–4.75 V, whereas the DS1230Y-120IND supports 4.5–5.5 V (±10%) and triggers protection at 4.25–4.5 V. Both share identical pinout, speed (70 ns), and industrial temperature rating, but DS1230AB-120IND offers higher noise immunity for well-regulated systems.
Can DS1230AB-120IND be used as a direct replacement for standard 28-pin SRAMs?
Yes, the DS1230AB-120IND uses a JEDEC-standard 28-pin DIP footprint and matches the pinout of common 32k × 8 volatile SRAMs and 28256 EEPROMs. It supports identical CE/OE/WE control protocols and requires no PCB changes-enabling drop-in upgrades to nonvolatile memory in legacy designs.
Is DS1230AB-120IND RoHS-compliant and lead-free?
Yes, DS1230AB-120IND is RoHS-compliant and lead-free, indicated by the "+" suffix in its ordering code. It meets EU Directive 2011/65/EU and is manufactured using Maxim's lead(Pb)-free process, with compatible reflow profiles for standard wave or hand soldering (not reflow-EDIP package).
DS1230AB-120IND Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 28-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 120ns
- Access Time:
- 120 ns
- Voltage - Supply:
- 4.75V ~ 5.25V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-EDIP
DS1230AB-120IND FAQ
1.How can I place an order for DS1230AB-120IND through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1230AB-120IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1230AB-120IND reliable?
The price and inventory of DS1230AB-120IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1230AB-120IND is usually 5 days.
3.What payment methods are accepted for DS1230AB-120IND?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1230AB-120IND transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1230AB-120IND?
DS1230AB-120IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1230AB-120IND order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1230AB-120IND?
For technical support, including DS1230AB-120IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1230AB-120IND requirements.
6.How does Aetrix verify that DS1230AB-120IND is sourced from the original manufacturer or authorized distributors?
All DS1230AB-120IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1230AB-120IND meets industry standards.
7.What is the process for return or replacement of DS1230AB-120IND?
All DS1230AB-120IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1230AB-120IND, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1230AB-120IND part is unused and in its original packaging.
Return procedure for DS1230AB-120IND:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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