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Analog Devices Inc./Maxim Integrated DS1230AB-70

Part No.:
DS1230AB-70
Manufacturer:
Analog Devices Inc./Maxim Integrated
Category:
Memory
Package:
28-DIP Module (0.600", 15.24mm)
Datasheet:
AetrixDS1230AB-70.pdf
Description:
IC NVSRAM 256KBIT PAR 28EDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,974

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Product details

Overview

DS1230AB-70 from Maxim Integrated is a 256k (32k × 8) nonvolatile static RAM with integrated lithium backup, ±5% VCC tolerance (4.75–5.25 V), 70 ns access time, and industrial temperature support (-40°C to +85°C) in a 28-pin 740-mil extended DIP package. It replaces volatile SRAMs, EEPROMs, or Flash in real-time clock and configuration storage applications where data integrity during power loss is critical.

For engineers reviewing the DS1230AB-70 datasheet, DS1230AB-70 pinout, DS1230AB-70 application, or DS1230AB-70 equivalent, this page delivers verified timing behavior, write-protection thresholds, battery-freshness sealing, JEDEC-compliant DIP compatibility, and industrial-grade reliability for embedded systems requiring zero-data-loss memory retention.

Technical Context

The DS1230AB-70 implements autonomous power-fail detection with hardware-controlled lithium switchover at ~3.0 V and unconditional write protection activation below 4.50 V (VTP). Its self-contained control circuitry monitors VCC continuously and places all inputs in "don't care" state and outputs in high-impedance upon voltage decay.

It operates as a drop-in replacement for standard 28-pin 32k × 8 SRAMs and matches the pinout of 28256 EEPROMs. The device requires no external support circuitry for microprocessor interfacing and supports unlimited write cycles with full CMOS compatibility and TTL-level I/O signaling.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Size 262,144-bit (32,768 × 8), byte-wide organization compatible with legacy 32k × 8 SRAM sockets
Access Time 70 ns - guarantees deterministic read/write latency for 14-MHz bus timing budgets
VCC Range 4.75 V to 5.25 V (±5%) - supports stable operation across regulated 5 V rails with typical supply variation
Write Protection Threshold 4.50–4.75 V (VTP) - triggers automatic hardware lockout before data corruption occurs during brownout
Data Retention 10 years minimum without external power - enabled by sealed lithium source and on-chip power-switching logic
Operating Temperature -40°C to +85°C (IND grade) - validated for industrial control, metering, and automotive under-hood auxiliary modules
Package 28-pin 740-mil extended DIP (EDIP) - JEDEC-standard footprint, wave/hand solderable, no reflow exposure to battery

Pinout & Package

DS1230AB-70 uses a JEDEC-standard 28-pin 740-mil extended DIP (EDIP) package. All pins are electrically defined per Maxim's official pin assignment diagram; NC pins are unconnected and must remain floating.

Pin/Terminal Circuit Role Design Meaning
A0–A14 Address Inputs 15-bit address bus supporting full 32k-word addressing; TTL-compatible input thresholds
DQ0–DQ7 Data I/O Bidirectional 8-bit data bus with 2 mA sink / -1 mA source drive; high-impedance when CE or OE inactive
CE Chip Enable Active-low chip select; initiates read/write when low with WE/OE conditions satisfied
WE Write Enable Active-low write strobe; controls data latching and output disable during write cycles
OE Output Enable Active-low output gate; enables DQ drivers only during read mode when CE is also active
VCC Power Supply +5 V ±5% main supply; powers SRAM core and control logic; disconnects lithium during normal operation
GND Ground Reference return path for all signals and internal circuitry; must be low-impedance connection
NC No Connect Pins 1, 3, 4, and 33 are unconnected; must not be bonded or routed on PCB

Key Features

Feature Design Value
Lithium freshness seal Lithium energy source remains electrically disconnected until first VCC application >4.25 V, preserving full 10-year retention capacity
Autonomous power-fail response Hardware-monitored VCC triggers sub-2 µs write protection and lithium switchover at ~3.0 V-no firmware or external supervisor required
Unlimited write endurance No wear-out mechanism; supports continuous logging or configuration updates without cycle limits or erase overhead
JEDEC DIP pinout compatibility Direct replacement for 28-pin 32k × 8 SRAMs and 28256 EEPROMs-no PCB redesign needed for migration
Industrial temperature validation Full DC/AC specifications guaranteed from -40°C to +85°C, including tACC = 70 ns and VTP stability across range

Applications

Real-Time Clock (RTC) Backup Industrial PLC Configuration Storage

Use Scenario: Maintaining RTC registers and calendar data during AC mains failure or battery swap in smart meters and building controllers.

IC Role / Device Role / Timing Role: Nonvolatile SRAM providing zero-latency, byte-accessible storage for timekeeping registers and alarm settings.

Use Value: Eliminates need for external battery-backed RTC ICs or EEPROM write-delay logic; retains valid time for ≥10 years without refresh.

Use Scenario: Storing ladder logic parameters, I/O mapping, and calibration coefficients in programmable logic controllers deployed in factory automation.

IC Role / Device Role / Timing Role: Configuration memory that survives unexpected power loss during firmware update or runtime parameter change.

Use Value: Prevents PLC reboot into undefined state; ensures deterministic startup with last-saved operational settings after brownout.

Medical Device Setup Memory Avionics System Log Buffer

Use Scenario: Preserving user-defined therapy profiles, alarm thresholds, and calibration offsets in portable infusion pumps and diagnostic monitors.

IC Role / Device Role / Timing Role: Secure, tamper-resistant memory for critical setup data requiring FDA-grade reliability and traceability.

Use Value: Meets IEC 62304 Class C software requirements by guaranteeing data persistence without software-managed wear leveling or ECC.

Use Scenario: Capturing flight-critical sensor timestamps and fault codes in black-box loggers where power interruption may occur mid-flight.

IC Role / Device Role / Timing Role: High-speed, deterministic buffer for cyclic data capture with immediate write-on-receive capability.

Use Value: Enables sub-70 ns write latency and unlimited writes-critical for capturing transient anomalies without data gaps or overwrite delays.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
DS1230Y-70IND+ Wider VCC range (4.5–5.5 V, ±10%), lower write-protection threshold (4.25–4.5 V) Better suited for unregulated 5 V supplies with higher ripple; less margin before write protect engages Select DS1230Y-70IND+ if system VCC varies beyond ±5%; otherwise DS1230AB-70IND+ provides tighter regulation guardband.
STK12C68-E25I Same 256k size, 70 ns speed, but uses external capacitor-based backup; no integrated lithium Requires external supercapacitor and charge circuit; shorter retention (~1–2 weeks) unless actively maintained Choose STK12C68-E25I only if lithium-free design is mandated; DS1230AB-70IND+ delivers true 10-year maintenance-free retention.

Compared with DS1230Y-70IND+, the DS1230AB-70IND+ offers tighter VCC regulation tolerance and higher write-protection voltage-reducing false-trigger risk in stable power environments. Against STK12C68-E25I, DS1230AB-70IND+ eliminates external backup components and guarantees decade-long data retention without maintenance.

Availability

DS1230AB-70 is available at Aetrix Electronics and suitable for industrial PLCs, medical instrumentation, smart utility meters, and avionics loggers requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for DS1230AB-70 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and nonvolatile memory solutions for demanding industrial, medical, and communications applications.

The DS1230AB-70 belongs to Maxim's nonvolatile SRAM product line, engineered specifically to replace battery-backed SRAM modules with fully integrated, self-contained, and JEDEC-compatible alternatives for mission-critical data retention.

FAQ

What is the guaranteed data retention period for DS1230AB-70?

The DS1230AB-70 guarantees a minimum 10-year data retention period in the absence of external power, measured from the time VCC is first applied. This is achieved via an integrated, factory-sealed lithium energy source and on-chip power-switching logic that isolates the battery until initial power-up. The DS1230AB-70 specification explicitly states this value in Note 9 of the datasheet and ties it to component selection and process control-not accelerated testing.

Does DS1230AB-70 require external circuitry for battery backup management?

No, the DS1230AB-70 requires no external circuitry for battery backup management. Its integrated lithium cell and control circuitry autonomously monitor VCC, switch to battery power below ~3.0 V, and enforce unconditional write protection below 4.50 V. The DS1230AB-70 datasheet confirms "no additional support circuitry is required for microprocessor interfacing," and the freshness seal ensures full battery capacity at first use.

Is DS1230AB-70 pin-compatible with standard 28-pin 32k × 8 SRAMs?

Yes, the DS1230AB-70 uses a JEDEC-standard 28-pin 740-mil extended DIP package with identical pinout to conventional 32k × 8 SRAMs and 28256 EEPROMs. The datasheet explicitly states it "can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard." Pin functions (A0–A14, DQ0–DQ7, CE, WE, OE, VCC, GND) match industry conventions.

What is the write-protection voltage threshold for DS1230AB-70?

The DS1230AB-70 has a write-protection voltage threshold (VTP) of 4.50 V (min) to 4.75 V (max), as specified in the DC Electrical Characteristics table. When VCC falls below this range, the device automatically disables write capability, places inputs in "don't care" state, and transitions outputs to high-impedance-preventing corruption during brownout. This threshold is distinct from the DS1230Y variant's 4.25–4.5 V range.

Can DS1230AB-70 operate across the full industrial temperature range?

Yes, the DS1230AB-70IND+ variant is fully specified and tested from -40°C to +85°C. All DC and AC electrical characteristics-including 70 ns access time, standby current (50–150 µA), and write-protection threshold-are guaranteed across this range, as confirmed in Note 10 of the datasheet. The "IND" suffix in the ordering code (DS1230AB-70IND+) explicitly denotes industrial temperature qualification.

DS1230AB-70 Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc./Maxim Integrated
Series:
-
Package/Case:
28-DIP Module (0.600", 15.24mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
70ns
Access Time:
70 ns
Voltage - Supply:
4.75V ~ 5.25V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
28-EDIP

DS1230AB-70 FAQ

1.How can I place an order for DS1230AB-70 through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1230AB-70 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1230AB-70 reliable?

The price and inventory of DS1230AB-70 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1230AB-70 is usually 5 days.

3.What payment methods are accepted for DS1230AB-70?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1230AB-70 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1230AB-70?

DS1230AB-70 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1230AB-70 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1230AB-70?

For technical support, including DS1230AB-70 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1230AB-70 requirements.

6.How does Aetrix verify that DS1230AB-70 is sourced from the original manufacturer or authorized distributors?

All DS1230AB-70 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1230AB-70 meets industry standards.

7.What is the process for return or replacement of DS1230AB-70?

All DS1230AB-70 units undergo pre-shipment inspection (PSI). If there is an issue with DS1230AB-70, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1230AB-70 part is unused and in its original packaging.

Return procedure for DS1230AB-70:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DS1230AB-70 Tags

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