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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1230AB-70IND

Name: DS1230AB-70IND
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1230AB-70IND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1230AB-70IND

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 28-DIP Module (0.600", 15.24mm)

Datasheet:: DS1230AB-70IND.pdf

Description:: IC NVSRAM 256KBIT PAR 28EDIP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DS1230AB-70IND from Maxim Integrated is a 256k (32k × 8) nonvolatile static RAM with integrated lithium backup, ±5% V_CC tolerance (4.75–5.25 V), 70 ns access time, and industrial temperature range (–40°C to +85°C). It replaces volatile SRAM, EEPROM, or Flash in battery-backed data logging, real-time clock storage, and configuration memory where write endurance and instant-on retention are critical.

For engineers reviewing the DS1230AB-70IND datasheet, DS1230AB-70IND pinout, DS1230AB-70IND application, or DS1230AB-70IND equivalent, key selection criteria include its automatic power-fail write protection, 10-year data retention without external power, JEDEC-standard 28-pin DIP package, and compatibility with existing 32k × 8 byte-wide memory sockets.

Technical Context

The DS1230AB-70IND integrates SRAM, lithium battery, and voltage-monitoring control circuitry into a single monolithic 28-pin EDIP package. Its internal power-switching logic detects V_CC decay below 4.5 V (V_TP) and unconditionally enables write protection while switching to battery backup at ~3.0 V.

It operates as a drop-in replacement for standard 28-pin 32k × 8 SRAMs with identical address/data/control pinout (A0–A14, DQ0–DQ7, CE, WE, OE), requiring no external support circuitry. Read/write timing conforms to industry-standard asynchronous SRAM protocols with t_ACC = 70 ns and t_WC = 70 ns under V_CC = 5 V ±5%.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	262,144 bits (32,768 words × 8 bits); directly replaces legacy 32k × 8 SRAM sockets.
Access Time	70 ns; ensures compatibility with 14 MHz bus systems without wait states.
V_CC Range	4.75 V to 5.25 V (±5%); supports stable operation across industrial-grade 5 V rails.
Data Retention	10 years minimum without external power; guaranteed by sealed lithium cell and low ICCS2 standby current (50–150 µA).
Operating Temp	–40°C to +85°C (IND grade); qualified for automotive control units and outdoor industrial controllers.
Write Cycles	Unlimited; eliminates wear-out concerns in high-frequency configuration update applications.
Package	28-pin 740-mil Extended DIP (EDIP); JEDEC-standard footprint for through-hole PCB assembly.

Pinout & Package

DS1230AB-70IND uses a 28-pin JEDEC-standard Extended DIP (EDIP) package with 740-mil width. All pins are electrically defined per Maxim's official pin assignment table; no NC pins are used for signal routing.

Pin/Terminal	Circuit Role	Design Meaning
A0–A14	Address Inputs	15-bit address bus supporting full 32k-word addressing; TTL-compatible inputs.
DQ0–DQ7	Data I/O	Bi-directional 8-bit data bus; high-impedance during deselect or write cycles to prevent bus contention.
CE	Chip Enable	Active-low chip select; initiates read/write when low and synchronized with WE/OE.
WE	Write Enable	Active-low write strobe; controls data latching; output drivers disabled when active during write.
OE	Output Enable	Active-low output gate; enables data bus drivers only during valid read cycles.
V_CC	Power Supply	+5 V supply input; monitored continuously for fail detection and automatic backup switchover.
GND	Ground	Reference return path for all signals and internal circuitry.
NC	No Connect	Pins 1, 3, 4, and 33 are unconnected; must remain floating per datasheet.

Key Features

Feature	Design Value
Automatic Power-Fail Protection	Hardware-monitored V_CC triggers unconditional write protect and battery switchover within 1.5 µs (t_PD), preventing corruption during brownouts.
Freshness Seal	Lithium source remains electrically disconnected until first V_CC application >4.25 V, preserving full 10-year retention capacity.
Zero External Support Circuitry	Self-contained control logic eliminates need for external supervisors, capacitors, or diodes-reducing BOM count and layout complexity.
Standard Pinout Compatibility	Matches both 28-pin 32k × 8 SRAMs and 28256 EEPROMs, enabling direct socket replacement without PCB redesign.
Industrial Temperature Qualification	Full DC/AC specs guaranteed over –40°C to +85°C, including t_ACC = 70 ns and V_TP = 4.50–4.75 V.

Applications

Smart Meter Data Logging	Industrial PLC Configuration Storage
Use Scenario: Storing tariff schedules, consumption history, and firmware checksums in electricity/water meters deployed outdoors. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing instant-write, corruption-free memory during grid outages or meter removal. Use Value: 10-year retention ensures regulatory compliance for 15+ year meter lifespans without battery replacement.	Use Scenario: Holding ladder logic parameters, I/O mapping, and calibration coefficients in programmable logic controllers operating in factory environments. IC Role / Device Role / Timing Role: Battery-backed memory retaining runtime configuration across power cycles and maintenance shutdowns. Use Value: Unlimited write cycles enable daily parameter updates without endurance degradation-critical for adaptive control tuning.
Medical Device Event History	Automotive Telematics Black Box
Use Scenario: Recording ECG waveform timestamps, alarm triggers, and therapy settings in portable diagnostic equipment. IC Role / Device Role / Timing Role: High-reliability memory capturing time-critical events during battery-only operation or AC failure. Use Value: 70 ns access time supports real-time buffering of sampled analog data without CPU intervention.	Use Scenario: Storing crash-triggered vehicle sensor data (accelerometer, GPS, CAN status) in telematics control units. IC Role / Device Role / Timing Role: Fail-safe memory activated within microseconds of main power loss to preserve forensic evidence. Use Value: Sub-2 µs V_CC fail detect (t_PD) ensures no data loss during sudden ignition cutoff or collision-induced power collapse.

Smart Meter Data Logging

Industrial PLC Configuration Storage

Use Scenario: Storing tariff schedules, consumption history, and firmware checksums in electricity/water meters deployed outdoors.

IC Role / Device Role / Timing Role: Nonvolatile SRAM providing instant-write, corruption-free memory during grid outages or meter removal.

Use Value: 10-year retention ensures regulatory compliance for 15+ year meter lifespans without battery replacement.

Use Scenario: Holding ladder logic parameters, I/O mapping, and calibration coefficients in programmable logic controllers operating in factory environments.

IC Role / Device Role / Timing Role: Battery-backed memory retaining runtime configuration across power cycles and maintenance shutdowns.

Use Value: Unlimited write cycles enable daily parameter updates without endurance degradation-critical for adaptive control tuning.

Medical Device Event History

Automotive Telematics Black Box

Use Scenario: Recording ECG waveform timestamps, alarm triggers, and therapy settings in portable diagnostic equipment.

IC Role / Device Role / Timing Role: High-reliability memory capturing time-critical events during battery-only operation or AC failure.

Use Value: 70 ns access time supports real-time buffering of sampled analog data without CPU intervention.

Use Scenario: Storing crash-triggered vehicle sensor data (accelerometer, GPS, CAN status) in telematics control units.

IC Role / Device Role / Timing Role: Fail-safe memory activated within microseconds of main power loss to preserve forensic evidence.

Use Value: Sub-2 µs V_CC fail detect (t_PD) ensures no data loss during sudden ignition cutoff or collision-induced power collapse.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1230Y-70IND+	Wider V_CC tolerance (±10%, 4.5–5.5 V); lower write-protect threshold (4.25 V vs. 4.5 V).	Better suited for noisy 5 V supplies with large ripple; less margin before backup activation.	Select DS1230Y-70IND+ if system V_CC varies beyond ±5%; otherwise DS1230AB-70IND offers tighter regulation and higher noise immunity.
STK12C68-A70I	Same 256k size and 70 ns speed but uses external battery; requires supervisor IC for power-fail detection.	Higher BOM cost and board area; design flexibility for custom battery integration.	Choose STK12C68-A70I only when modular battery replacement or extended temperature validation beyond –40°C to +85°C is required.

Compared with DS1230Y-70IND+, the DS1230AB-70IND provides stricter V_CC regulation and earlier write protection-enhancing data integrity in stable industrial rails. Against STK12C68-A70I, it delivers true single-package integration, eliminating external supervision and reducing layout risk in space-constrained designs.

Availability

DS1230AB-70IND is available at Aetrix Electronics and suitable for smart meter data logging, industrial PLC configuration storage, and medical device event history requiring stable component supply across long product lifecycles.

Supply support for DS1230AB-70IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in precision analog, mixed-signal, and power management ICs for industrial, automotive, and computing applications.

The DS1230AB-70IND belongs to Maxim's nonvolatile SRAM product line, designed specifically for mission-critical data retention in systems where power interruption is frequent or unpredictable-enabling reliable, maintenance-free memory in harsh environments.

FAQ

What is the guaranteed data retention period for DS1230AB-70IND?

The DS1230AB-70IND guarantees a minimum 10-year data retention period in the absence of external power, measured from the time V_CC is first applied. This is assured by component selection, process control, and design-not production-tested per unit-and relies on the internal lithium cell remaining disconnected until initial power-up.

Does DS1230AB-70IND require external circuitry for battery backup operation?

No, DS1230AB-70IND requires no external circuitry. It integrates the lithium energy source, voltage monitor, and power-switching logic internally. The device automatically enables backup and write protection when V_CC falls below 4.5 V, and reverts to main supply above 4.75 V-fully autonomous operation.

What is the difference between DS1230AB-70IND and DS1230Y-70IND?

The DS1230AB-70IND specifies a ±5% V_CC tolerance (4.75–5.25 V) and write-protection threshold of 4.50–4.75 V, while DS1230Y-70IND uses ±10% (4.5–5.5 V) and 4.25–4.5 V. Both share identical pinout, speed (70 ns), and industrial temperature rating, but DS1230AB-70IND offers tighter regulation for cleaner power rails.

Can DS1230AB-70IND be used as a direct replacement for standard 28-pin 32k × 8 SRAMs?

Yes, DS1230AB-70IND is a pin- and function-compatible drop-in replacement for standard 28-pin 32k × 8 SRAMs. Its A0–A14, DQ0–DQ7, CE, WE, and OE pins match JEDEC-standard byte-wide SRAMs, and it operates with identical read/write timing-no PCB or firmware changes required.

What package type does DS1230AB-70IND use, and is it RoHS-compliant?

DS1230AB-70IND uses a 28-pin 740-mil Extended DIP (EDIP) package. The "+" suffix in the ordering code (DS1230AB-70IND+) confirms it is lead(Pb)-free and RoHS-compliant, with full qualification per JEDEC standards for through-hole assembly.

DS1230AB-70IND Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 28-DIP Module (0.600", 15.24mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 256Kbit

Memory Organization:: 32K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 70ns

Access Time:: 70 ns

Voltage - Supply:: 4.75V ~ 5.25V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 28-EDIP

DS1230AB-70IND FAQ

1.How can I place an order for DS1230AB-70IND through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1230AB-70IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1230AB-70IND reliable?

The price and inventory of DS1230AB-70IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1230AB-70IND is usually 5 days.

3.What payment methods are accepted for DS1230AB-70IND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1230AB-70IND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1230AB-70IND?

DS1230AB-70IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1230AB-70IND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1230AB-70IND?

For technical support, including DS1230AB-70IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1230AB-70IND requirements.

6.How does Aetrix verify that DS1230AB-70IND is sourced from the original manufacturer or authorized distributors?

All DS1230AB-70IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1230AB-70IND meets industry standards.

7.What is the process for return or replacement of DS1230AB-70IND?

All DS1230AB-70IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1230AB-70IND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1230AB-70IND part is unused and in its original packaging.

Return procedure for DS1230AB-70IND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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