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Analog Devices Inc./Maxim Integrated DS1230W-100IND
- Part No.:
- DS1230W-100IND
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 28-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1230W-100IND.pdf
- Description:
- IC NVSRAM 256KBIT PAR 28EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:3,868
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Product details
Overview
DS1230W-100IND from Maxim Integrated is a 3.3V, 256-kbit (32k × 8) nonvolatile static RAM with lithium backup, 100ns read/write access time, industrial temperature rating (–40°C to +85°C), and JEDEC-standard 28-pin DIP package. It replaces volatile SRAM, EEPROM, or Flash in battery-backed memory applications requiring data retention during power loss.
For engineers reviewing the DS1230W-100IND datasheet, DS1230W-100IND pinout, DS1230W-100IND application, or DS1230W-100IND equivalent, key selection criteria include guaranteed 10-year data retention without external power, automatic write protection at VCC < 2.8V, unlimited write cycles, low-power CMOS operation, and compatibility with legacy 28-pin byte-wide memory sockets.
Technical Context
The DS1230W-100IND integrates SRAM, lithium battery, and voltage-monitoring control circuitry into a single monolithic DIP package. Its internal power-switching logic detects VCC decay below ~2.5V and seamlessly transfers RAM supply to the lithium source while unconditionally enabling write protection - all without external components.
It operates as a drop-in replacement for standard 32k × 8 SRAMs, matching both the pinout of 28-pin DIP SRAMs and 28256 EEPROMs. The device supports full asynchronous read/write timing with tACC = tRC = tWC = 100ns, and enforces data integrity via hardware-level write protection triggered at VTP = 2.8–3.0V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 256 kbit (32,768 × 8), directly replaces 32k × 8 volatile SRAM or EEPROM |
| Access Time | 100 ns - enables direct interface with 10 MHz bus systems without wait states |
| Data Retention | 10 years minimum without external power - enabled by integrated lithium cell and freshness seal |
| Operating Voltage | 3.0 V to 3.6 V - compatible with 3.3V logic systems; write protection activates at 2.8–3.0V |
| Temperature Range | –40°C to +85°C - qualified for industrial environments without derating |
| Write Cycles | Unlimited - no endurance limit, unlike EEPROM or Flash |
| Standby Current | 30–250 µA - enables ultra-low-power hold mode in battery-critical systems |
Pinout & Package
DS1230W-100IND uses a JEDEC-standard 28-pin Extended DIP (740-mil) package with integrated lithium backup. Pin functions are electrically identical across DS1230W variants and match industry-standard 28-pin byte-wide memory layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit address bus for 32k-word addressing; TTL/CMOS-compatible inputs |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; high-impedance when CE or OE inactive |
| CE | Chip Enable | Active-low chip select; initiates read/write when low with WE/OE conditions met |
| WE | Write Enable | Active-low write strobe; controls write cycle start/termination with CE |
| OE | Output Enable | Active-low output enable; disables outputs during writes to prevent bus contention |
| VCC | Power Supply | +3.3V ±0.3V main supply; powers SRAM and control logic; triggers lithium activation on first power-up |
| GND | Ground | Reference return for all signals and internal circuitry |
| NC | No Connect | Pins 1, 3, 4, 5, 6, 7, 12, 13, 14, 15, 16, 17, 28 - unused; must remain unconnected |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Protection | Hardware-monitored VCC detection switches to lithium backup and locks writes within 1.5 µs of out-of-tolerance condition |
| Freshness Seal | Lithium source remains electrically disconnected until first VCC > 3.0V application - preserves full 10-year retention capacity |
| Zero External Support Circuitry | Self-contained voltage monitoring, switching, and write protection - no external capacitors, regulators, or controllers required |
| Legacy Socket Compatibility | Pinout matches 28-pin DIP SRAMs and 28256 EEPROMs - enables retrofit into existing designs without PCB changes |
| Industrial Temperature Operation | Full 100ns timing and data retention guaranteed from –40°C to +85°C - no performance degradation or qualification gaps |
Applications
| Industrial Data Loggers | Medical Device Memory Backup |
|---|---|
|
Use Scenario: Continuous recording of sensor readings in remote environmental monitors operating on intermittent power. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing real-time operational logs; retains data during grid outages or battery swaps. Use Value: Eliminates need for EEPROM wear-leveling or Flash programming delays - enables microsecond write latency and infinite logging cycles. |
Use Scenario: Storing calibration coefficients and last-known vital signs in portable ECG or infusion pumps. IC Role / Device Role / Timing Role: Battery-backed memory preserving critical configuration and safety-critical state between power cycles. Use Value: Guarantees 10-year data retention without periodic refresh or external battery management - meets IEC 60601-1 reliability requirements. |
| Telecom Base Station Control | Avionics Configuration Storage |
|
Use Scenario: Holding FPGA configuration bitstreams and runtime parameters in cellular baseband units exposed to wide thermal swings. IC Role / Device Role / Timing Role: High-reliability memory buffer interfacing directly with ARM or DSP processors via parallel bus. Use Value: Delivers 100ns access with zero write endurance limits - avoids Flash reprogramming latency during field updates. |
Use Scenario: Preserving flight control software checksums and sensor offset tables in airborne navigation modules. IC Role / Device Role / Timing Role: MIL-STD-810G-compliant nonvolatile storage operating across –40°C to +85°C without derating. Use Value: Meets DO-254/ED-80 functional safety requirements for deterministic write protection and guaranteed retention under rapid power loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK12C68-55I | 55ns access time; 5V supply; 28-pin DIP; no integrated lithium - requires external battery and support circuitry | Requires redesign for 5V logic and external backup management; lacks automatic write protection | Select only if legacy 5V system compatibility is mandatory and board space allows discrete backup design |
| DS1249Y-100IND+ | 1Mbit density (128k × 8); same 3.3V/100ns/industrial spec; larger 32-pin DIP package | Higher capacity but incompatible pinout - not socket-compatible with DS1230W-100IND | Choose when >256kbit memory is needed and PCB layout can accommodate 32-pin footprint |
Compared with STK12C68-55I and DS1249Y-100IND+, the DS1230W-100IND offers unique integration of lithium backup, automatic write protection, and 28-pin socket compatibility - eliminating external components while maintaining full timing and industrial temperature compliance.
Availability
DS1230W-100IND is available at Aetrix Electronics and suitable for industrial data loggers, medical device memory backup, telecom base station control, avionics configuration storage, and other applications requiring stable component supply with guaranteed long-term data retention.
Supply support for DS1230W-100IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in precision analog, mixed-signal, and power management ICs for industrial, medical, and communications systems.
The DS1230W-100IND belongs to Maxim's nonvolatile SRAM product line, designed specifically to eliminate external backup circuitry in mission-critical memory applications where data integrity during power failure is non-negotiable.
FAQ
What is the guaranteed data retention period for DS1230W-100IND without external power?
The DS1230W-100IND guarantees a minimum of 10 years of data retention in the absence of external power, measured from the time VCC is first applied - thanks to its integrated lithium energy source and freshness seal that preserves full battery capacity until initial power-up.
Does DS1230W-100IND require external circuitry for battery backup or write protection?
No, the DS1230W-100IND requires no external circuitry. Its internal control circuitry continuously monitors VCC and automatically switches to the integrated lithium source and enables write protection when VCC falls below 2.8V - all without external components or firmware intervention.
Is DS1230W-100IND pin-compatible with standard 28-pin DIP SRAMs?
Yes, the DS1230W-100IND uses a JEDEC-standard 28-pin DIP package with pinout identical to conventional 32k × 8 SRAMs and 28256 EEPROMs - enabling direct socket replacement in existing designs without PCB modifications.
What is the operating voltage range and write-protection threshold for DS1230W-100IND?
The DS1230W-100IND operates over 3.0V to 3.6V and features hardware-enforced write protection that activates when VCC drops to 2.8–3.0V (VTP). This ensures data integrity before power collapse reaches critical levels.
How does the DS1230W-100IND handle power-up and power-down transitions?
During power-down, the DS1230W-100IND detects VCC decay within 1.5 µs and switches to lithium backup while disabling writes. At power-up, it reconnects VCC to the SRAM and disconnects the lithium source once VCC exceeds ~2.5V - resuming full operation after VCC stabilizes above 3.0V.
DS1230W-100IND Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 28-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-EDIP
DS1230W-100IND FAQ
1.How can I place an order for DS1230W-100IND through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1230W-100IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1230W-100IND reliable?
The price and inventory of DS1230W-100IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1230W-100IND is usually 5 days.
3.What payment methods are accepted for DS1230W-100IND?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1230W-100IND transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1230W-100IND?
DS1230W-100IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1230W-100IND order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1230W-100IND?
For technical support, including DS1230W-100IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1230W-100IND requirements.
6.How does Aetrix verify that DS1230W-100IND is sourced from the original manufacturer or authorized distributors?
All DS1230W-100IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1230W-100IND meets industry standards.
7.What is the process for return or replacement of DS1230W-100IND?
All DS1230W-100IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1230W-100IND, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1230W-100IND part is unused and in its original packaging.
Return procedure for DS1230W-100IND:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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