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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1230Y-100

Name: DS1230Y-100
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1230Y-100
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1230Y-100

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 28-DIP Module (0.600", 15.24mm)

Datasheet:: DS1230Y-100.pdf

Description:: IC NVSRAM 256KBIT PAR 28EDIP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DS1230Y-100 from Maxim Integrated is a 256k (32k × 8) nonvolatile static RAM with integrated lithium backup, ±10% V_CC operation (4.5V–5.5V), 70 ns access time, and 10-year data retention without external power. It serves as a drop-in replacement for volatile SRAMs in real-time clock and configuration memory applications where power loss resilience is critical.

For engineers reviewing the DS1230Y-100 datasheet, DS1230Y-100 pinout, DS1230Y-100 application, or DS1230Y-100 equivalent, key selection considerations include its self-contained battery switchover timing (V_CC < ~3.0 V), write-protection threshold (4.25 V), JEDEC-standard 28-pin DIP footprint, and absence of external support circuitry requirements.

Technical Context

The DS1230Y-100 integrates SRAM, lithium energy source, and voltage-monitoring control logic into a single monolithic package. Its power-fail detection circuit triggers automatic write protection and battery switchover within 1.5 µs when V_CC drops below 4.25 V, ensuring data integrity during brownout or shutdown.

It operates in three distinct modes: normal read/write (V_CC ≥ 4.5 V), data retention (V_CC < 3.0 V, lithium-powered), and transitional protection (3.0 V ≤ V_CC < 4.25 V). All inputs become don't-care and outputs go high-impedance during retention mode, eliminating bus contention risks.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	32,768 words × 8 bits - matches standard 32k × 8 SRAM footprint and interface timing
Access Time	70 ns - enables direct replacement of legacy 70 ns static RAMs without timing redesign
V_CC Operating Range	4.5 V to 5.5 V (±10%) - supports wider supply tolerance than DS1230AB, easing power rail design
Write Protection Threshold	4.25 V - initiates unconditional write lock before data corruption risk at marginal V_CC
Data Retention	10 years without power - guaranteed by sealed lithium cell and internal disconnect freshness seal
Standby Current	50–150 µA (CE = V_CC−0.5 V) - ultra-low quiescent draw during battery-backed retention
Package	28-pin 740-mil Extended DIP - JEDEC-standard through-hole footprint, compatible with existing 28256 EEPROM layouts

Pinout & Package

DS1230Y-100 is supplied in a JEDEC-standard 28-pin Extended DIP (740-mil) package with integrated lithium battery and control circuitry. No external backup components are required.

Pin/Terminal	Circuit Role	Design Meaning
A0–A14	Address Inputs	15-bit address bus supporting full 32k-word addressing; TTL-compatible input thresholds
DQ0–DQ7	Data I/O	Bidirectional 8-bit data bus; high-impedance during write or chip deselect to prevent bus contention
CE	Chip Enable	Active-low chip select; controls device activation and initiates power-down sequence when deasserted
WE	Write Enable	Active-low write strobe; combined with CE to define write cycle boundaries per JEDEC SRAM timing
OE	Output Enable	Active-low output enable; allows read data gating independent of CE for multiplexed bus systems
V_CC	Power Supply	+5 V supply input; monitored continuously for out-of-tolerance conditions triggering battery switchover
GND	Ground	Reference return path for all signals and internal circuitry
NC	No Connect	Pins 1, 3, 4, and 33 are unconnected; must remain floating per datasheet layout guidance

Key Features

Feature	Design Value
Self-contained lithium backup	Integrated battery electrically disconnected until first V_CC application >4.25 V, preserving full 10-year capacity
Automatic write protection	Unconditional lockout of write operations when V_CC falls below 4.25 V, preventing partial writes and corruption
Zero-support-circuitry interface	Direct microprocessor connection using standard SRAM control signals (CE/WE/OE); no external supervisors or regulators needed
Unlimited write cycles	No endurance limit on write operations-enables frequent configuration updates without wear-out concerns
Standardized pinout compatibility	Matches both 28-pin 32k × 8 SRAMs and 28256 EEPROMs, enabling board-level substitution without layout change

Applications

Real-Time Clock (RTC) Backup Memory	Industrial PLC Configuration Storage
Use Scenario: Maintaining timekeeping registers and alarm settings across AC mains failure or battery swap in embedded RTC modules. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing glitch-free, low-latency read/write access to time-critical registers while retaining data during extended power loss. Use Value: Eliminates need for external EEPROM write-delay handling and ensures sub-millisecond register access during normal operation-critical for time-synchronized control loops.	Use Scenario: Storing ladder logic parameters, I/O mapping, and calibration coefficients in programmable logic controllers deployed in factory automation environments. IC Role / Device Role / Timing Role: Configuration memory that survives unexpected power interruption during firmware update or runtime parameter adjustment. Use Value: Guarantees deterministic recovery after brownout without requiring boot-time checksum validation or reinitialization delays-reducing machine downtime.
Medical Device Setup Data Retention	Telecom Base Station Calibration Tables
Use Scenario: Preserving user-defined therapy profiles, alarm thresholds, and sensor calibration offsets in portable infusion pumps and diagnostic monitors. IC Role / Device Role / Timing Role: Patient-critical nonvolatile storage with zero write-cycle limitation, supporting frequent clinical recalibration. Use Value: Enables unlimited real-time parameter updates during treatment without risking data loss or endurance exhaustion-meeting IEC 62304 safety requirements.	Use Scenario: Holding RF front-end compensation tables and temperature-compensated gain settings in cellular base station transceivers operating in remote outdoor cabinets. IC Role / Device Role / Timing Role: High-reliability memory for field-updatable calibration data subject to thermal cycling and long-term unpowered storage. Use Value: Delivers 10-year retention at −40°C to +85°C (IND variant) without periodic refresh, reducing maintenance visits and field recalibration costs.

Real-Time Clock (RTC) Backup Memory

Industrial PLC Configuration Storage

Use Scenario: Maintaining timekeeping registers and alarm settings across AC mains failure or battery swap in embedded RTC modules.

IC Role / Device Role / Timing Role: Nonvolatile SRAM providing glitch-free, low-latency read/write access to time-critical registers while retaining data during extended power loss.

Use Value: Eliminates need for external EEPROM write-delay handling and ensures sub-millisecond register access during normal operation-critical for time-synchronized control loops.

Use Scenario: Storing ladder logic parameters, I/O mapping, and calibration coefficients in programmable logic controllers deployed in factory automation environments.

IC Role / Device Role / Timing Role: Configuration memory that survives unexpected power interruption during firmware update or runtime parameter adjustment.

Use Value: Guarantees deterministic recovery after brownout without requiring boot-time checksum validation or reinitialization delays-reducing machine downtime.

Medical Device Setup Data Retention

Telecom Base Station Calibration Tables

Use Scenario: Preserving user-defined therapy profiles, alarm thresholds, and sensor calibration offsets in portable infusion pumps and diagnostic monitors.

IC Role / Device Role / Timing Role: Patient-critical nonvolatile storage with zero write-cycle limitation, supporting frequent clinical recalibration.

Use Value: Enables unlimited real-time parameter updates during treatment without risking data loss or endurance exhaustion-meeting IEC 62304 safety requirements.

Use Scenario: Holding RF front-end compensation tables and temperature-compensated gain settings in cellular base station transceivers operating in remote outdoor cabinets.

IC Role / Device Role / Timing Role: High-reliability memory for field-updatable calibration data subject to thermal cycling and long-term unpowered storage.

Use Value: Delivers 10-year retention at −40°C to +85°C (IND variant) without periodic refresh, reducing maintenance visits and field recalibration costs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1230AB-70+	Narrower V_CC range (4.75–5.25 V); higher write-protection threshold (4.50 V)	Better suited for stable 5 V ±5% rails; less tolerant of noisy or aging power supplies	Select DS1230AB-70+ only if system V_CC regulation meets ±5% spec and brownout margin exceeds 0.25 V
STK12C68	Same 256k organization but uses external capacitor-based backup; no integrated lithium; 100 ns access time	Requires external supercapacitor and charge circuit; lower cost but shorter retention (72 hr typical)	Choose STK12C68 only for cost-sensitive, short-duration backup needs where board space permits external components

Compared with DS1230AB-70+, the DS1230Y-100 offers broader supply tolerance and earlier write-lock activation-critical for legacy or poorly regulated systems. Against STK12C68, it delivers true 10-year retention without external parts, simplifying BOM and improving field reliability.

Availability

DS1230Y-100 is available at Aetrix Electronics and suitable for industrial PLCs, medical instrumentation, telecom infrastructure, and embedded RTC modules requiring stable component supply across extended product lifecycles.

Supply support for DS1230Y-100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power management ICs for industrial, medical, and communications applications.

The DS1230Y-100 belongs to Maxim's nonvolatile SRAM product line, engineered specifically to eliminate external backup circuitry while delivering guaranteed 10-year data retention in mission-critical embedded systems.

FAQ

What is the minimum V_CC level at which DS1230Y-100 guarantees write protection?

The DS1230Y-100 guarantees unconditional write protection when V_CC falls below 4.25 V, as specified in its DC Electrical Characteristics table. This threshold ensures data integrity before supply collapse reaches levels that could cause partial writes or metastability in the SRAM core. The DS1230Y-100 maintains this behavior across its full commercial temperature range (0°C to +70°C).

Does DS1230Y-100 require external capacitors or support circuitry for battery switchover?

No, the DS1230Y-100 requires no external capacitors, supervisors, or charge circuitry. Its internal lithium cell and voltage-monitoring control logic handle automatic switchover between V_CC and battery power. The DS1230Y-100 integrates all necessary functions-including freshness seal disconnection on first power-up-into the 28-pin DIP package.

Can DS1230Y-100 be used as a direct replacement for standard 28-pin 32k × 8 SRAMs?

Yes, the DS1230Y-100 uses a JEDEC-standard 28-pin DIP footprint and matches the pinout of conventional 32k × 8 static RAMs and 28256 EEPROMs. Its timing parameters-including 70 ns access time and standard CE/WE/OE control-allow drop-in replacement without PCB or firmware changes, provided the system supports its ±10% V_CC range.

How does the DS1230Y-100 ensure 10-year data retention without external power?

The DS1230Y-100 achieves 10-year retention via an integrated lithium battery sealed inside the package and electrically disconnected until first V_CC application (>4.25 V). Once enabled, the battery powers the SRAM during V_CC loss. Retention time is assured by component selection, process control, and design-not production-tested per unit-but validated across qualification lots per Maxim's reliability standards.

What happens to DS1230Y-100 outputs and inputs during power-loss transition?

When V_CC drops below ~3.0 V, the DS1230Y-100 switches to lithium power and places all outputs in high-impedance state while treating all inputs as "don't care." This prevents bus contention and eliminates unintended writes during brownout. The DS1230Y-100 maintains this safe state until V_CC rises above 4.5 V and stabilizes, at which point normal operation resumes automatically.

DS1230Y-100 Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 28-DIP Module (0.600", 15.24mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 256Kbit

Memory Organization:: 32K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 100ns

Access Time:: 100 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 28-EDIP

DS1230Y-100 FAQ

1.How can I place an order for DS1230Y-100 through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1230Y-100 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1230Y-100 reliable?

The price and inventory of DS1230Y-100 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1230Y-100 is usually 5 days.

3.What payment methods are accepted for DS1230Y-100?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1230Y-100 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1230Y-100?

DS1230Y-100 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1230Y-100 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1230Y-100?

For technical support, including DS1230Y-100 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1230Y-100 requirements.

6.How does Aetrix verify that DS1230Y-100 is sourced from the original manufacturer or authorized distributors?

All DS1230Y-100 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1230Y-100 meets industry standards.

7.What is the process for return or replacement of DS1230Y-100?

All DS1230Y-100 units undergo pre-shipment inspection (PSI). If there is an issue with DS1230Y-100, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1230Y-100 part is unused and in its original packaging.

Return procedure for DS1230Y-100:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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