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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1230Y-120

Name: DS1230Y-120
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1230Y-120
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1230Y-120

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 28-DIP Module (0.600", 15.24mm)

Datasheet:: DS1230Y-120.pdf

Description:: IC NVSRAM 256KBIT PAR 28EDIP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DS1230Y-120 from Maxim Integrated is a 256k (32k × 8) nonvolatile static RAM with integrated lithium backup, ±10% V_CC operation (4.5V–5.5V), 70 ns access time, and 10-year data retention without external power. It functions as a drop-in replacement for volatile SRAMs in real-time clock and configuration memory applications where power loss resilience is critical.

For engineers reviewing the DS1230Y-120 datasheet, DS1230Y-120 pinout, DS1230Y-120 application, or DS1230Y-120 equivalent, key selection criteria include write-protection voltage threshold (4.25V), JEDEC-standard 28-pin DIP compatibility, battery-freshness seal activation on first power-up, and industrial-grade temperature support when ordered with IND suffix.

Technical Context

The DS1230Y-120 integrates SRAM, lithium battery, and autonomous power-fail detection circuitry in one monolithic 28-pin EDIP package. Its control logic monitors V_CC continuously and triggers unconditional write protection when voltage drops below 4.25V, then switches to battery power at ~3.0V to maintain data integrity.

It operates in three distinct modes: normal read/write (V_CC ≥ 4.5V), automatic write-protect (V_CC < 4.25V), and battery-retention (V_CC < 3.0V). All inputs become don't-care and outputs go high-impedance during power-down transitions, eliminating bus contention risks.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	262,144-bit (32,768 × 8), directly replaces standard 32k × 8 SRAMs without address decoding changes
Access Time	70 ns - enables direct interface with 14 MHz Z80, 80C88, or 68000-class microprocessors
V_CC Range	4.5V to 5.5V (±10%) - supports wide-input industrial power rails without regulation
Write Protection Threshold	4.25V - initiates automatic lockout before brownout corrupts writes
Data Retention	10 years minimum without external power - guaranteed by sealed lithium cell and low-standby ICCS2 (50–150 µA)
Operating Temp	0°C to +70°C (Commercial); -40°C to +85°C with IND suffix - validated across full range per JEDEC JESD22-A108
Package	28-pin 740-mil Extended DIP (EDIP) - matches pinout of 28256 EEPROMs and industry-standard 32k × 8 SRAMs

Pinout & Package

DS1230Y-120 uses a JEDEC-standard 28-pin 740-mil Extended DIP (EDIP) package with integrated lithium battery and nonvolatile control circuitry. The package is wave- or hand-solderable only (not reflow-compatible).

Pin/Terminal	Circuit Role	Design Meaning
A0–A14	Address Inputs	15-bit address bus supporting full 32k-word addressing; TTL-compatible input thresholds
DQ0–DQ7	Data I/O	Bidirectional 8-bit data bus with 2.0 mA sink / -1.0 mA source drive capability
CE	Chip Enable	Active-low chip select; controls device enable and write-cycle initiation timing
WE	Write Enable	Active-low write strobe; falling edge defines write start; must be high during reads
OE	Output Enable	Active-low output control; disables drivers during writes to prevent bus contention
V_CC	Power Supply	+5V supply pin; powers SRAM core and control logic; monitored for fail-detect
GND	Ground	Reference return path for all signals and internal battery switching circuitry
NC	No Connect	Pins 1, 3, 4, and 33 are unconnected; no internal bonding or function

Key Features

Feature	Design Value
Lithium freshness seal	Electrically disconnects battery until first V_CC > 4.25V applied - guarantees full 10-year retention capacity at installation
Autonomous power-fail response	Sub-µs detection (t_PD = 1.5 µs) and unconditional write protect - prevents corruption during fast transients
Unlimited write cycles	No endurance limit - eliminates wear-leveling firmware overhead required by EEPROM/Flash
Standardized pinout	Matches 28256 EEPROM and legacy 32k × 8 SRAM footprints - enables board-level drop-in upgrades
Low-power standby	ICCS2 = 50–150 µA at V_CC–0.5V - reduces system sleep current in battery-backed systems

Applications

Real-Time Clock (RTC) Backup Memory	Industrial PLC Configuration Storage
Use Scenario: Maintaining timekeeping registers and alarm settings during AC mains failure in embedded RTC modules. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing zero-latency, byte-addressable storage for RTC registers and calibration data. Use Value: Eliminates need for external battery management ICs and preserves time accuracy across 10-year field life without maintenance.	Use Scenario: Storing ladder logic parameters, I/O mapping, and calibration coefficients in programmable logic controllers deployed in factory automation. IC Role / Device Role / Timing Role: Configuration memory that retains user-defined operational settings during unexpected power interruptions. Use Value: Ensures deterministic restart behavior after brownouts, avoiding machine downtime or unsafe state recovery.
Medical Device Event Logging	Avionics Power-Up State Capture
Use Scenario: Recording diagnostic timestamps, sensor fault events, and therapy delivery logs in portable infusion pumps and defibrillators. IC Role / Device Role / Timing Role: High-reliability data buffer that captures critical safety events even during rapid power collapse. Use Value: Meets IEC 62304 Class C software requirements for persistent event logging with verified 10-year data integrity.	Use Scenario: Capturing flight control surface positions and sensor initialization states during aircraft power-up sequences prior to engine start. IC Role / Device Role / Timing Role: Power-fail resilient memory holding pre-flight configuration snapshots for deterministic boot sequencing. Use Value: Enables immediate post-power-up validation of airworthiness-critical parameters without relying on volatile boot ROM.

Real-Time Clock (RTC) Backup Memory

Industrial PLC Configuration Storage

Use Scenario: Maintaining timekeeping registers and alarm settings during AC mains failure in embedded RTC modules.

IC Role / Device Role / Timing Role: Nonvolatile SRAM providing zero-latency, byte-addressable storage for RTC registers and calibration data.

Use Value: Eliminates need for external battery management ICs and preserves time accuracy across 10-year field life without maintenance.

Use Scenario: Storing ladder logic parameters, I/O mapping, and calibration coefficients in programmable logic controllers deployed in factory automation.

IC Role / Device Role / Timing Role: Configuration memory that retains user-defined operational settings during unexpected power interruptions.

Use Value: Ensures deterministic restart behavior after brownouts, avoiding machine downtime or unsafe state recovery.

Medical Device Event Logging

Avionics Power-Up State Capture

Use Scenario: Recording diagnostic timestamps, sensor fault events, and therapy delivery logs in portable infusion pumps and defibrillators.

IC Role / Device Role / Timing Role: High-reliability data buffer that captures critical safety events even during rapid power collapse.

Use Value: Meets IEC 62304 Class C software requirements for persistent event logging with verified 10-year data integrity.

Use Scenario: Capturing flight control surface positions and sensor initialization states during aircraft power-up sequences prior to engine start.

IC Role / Device Role / Timing Role: Power-fail resilient memory holding pre-flight configuration snapshots for deterministic boot sequencing.

Use Value: Enables immediate post-power-up validation of airworthiness-critical parameters without relying on volatile boot ROM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1230AB-70+	Narrower V_CC tolerance (±5%, 4.75–5.25V); higher write-protection threshold (4.50V)	Better suited for tightly regulated 5V systems; less tolerant of unregulated industrial rails	Select DS1230AB-70+ when system V_CC remains within ±5% and higher noise immunity on write-protect threshold is required.
STK12C68-70	Same 256k size and 70 ns speed but uses external battery; no integrated freshness seal or autonomous switch	Requires external battery management circuitry and manual battery replacement planning	Choose STK12C68-70 only if long-term supply chain control over external lithium cells is preferred over integrated reliability.

Compared with DS1230AB-70+ and STK12C68-70, the DS1230Y-120 provides wider supply tolerance and factory-sealed battery longevity at the cost of slightly lower write-protection voltage margin - making it optimal for cost-sensitive industrial designs with variable input rails.

Availability

DS1230Y-120 is available at Aetrix Electronics and suitable for real-time clock backup, industrial PLC configuration storage, and medical event logging requiring stable component supply across extended product lifecycles.

Supply support for DS1230Y-120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a U.S.-based semiconductor company specializing in high-performance analog, mixed-signal, and power management ICs for industrial, automotive, and communications markets.

The DS1230Y-120 belongs to Maxim's nonvolatile SRAM product line, engineered specifically for applications demanding seamless, maintenance-free data retention during unpredictable power failures - especially where PCB space, bill-of-materials simplification, and long-term field reliability are critical.

FAQ

What is the guaranteed data retention period for DS1230Y-120 under zero-power conditions?

The DS1230Y-120 guarantees a minimum 10-year data retention period when powered down, based on component selection, process control, and design validation. This retention starts from the moment V_CC is first applied above 4.25V, which activates the internal lithium energy source. The specification is assured-not measured per unit-and applies across the commercial temperature range (0°C to +70°C).

Does DS1230Y-120 require external circuitry for battery backup operation?

No, the DS1230Y-120 requires no external circuitry for battery backup operation. It integrates a lithium energy source, power-fail detection logic, and automatic switching circuitry into a single 28-pin EDIP package. The device self-manages transition between V_CC and battery power, enabling write protection and data retention without additional components.

What is the write-protection voltage threshold for DS1230Y-120, and how does it behave during brownout?

The DS1230Y-120 asserts unconditional write protection when V_CC falls below 4.25V (typical 4.37V). During brownout, all address and data lines become don't-care, outputs enter high-impedance state, and the internal SRAM is locked to prevent corruption. At ~3.0V, the lithium battery is automatically connected to sustain memory contents.

Can DS1230Y-120 be used as a direct replacement for standard 28-pin 32k × 8 SRAMs?

Yes, the DS1230Y-120 uses a JEDEC-standard 28-pin DIP footprint and matches the pinout of conventional 32k × 8 SRAMs and 28256 EEPROMs. Its CE, WE, OE, and address/data signal definitions align with industry-standard timing, allowing direct substitution without PCB layout changes or firmware modification.

Is DS1230Y-120 RoHS-compliant and lead-free?

Yes, DS1230Y-120 is RoHS-compliant and lead-free, indicated by the "+" suffix in its ordering code. It meets EU Directive 2011/65/EU and is manufactured using Maxim's lead(Pb)-free packaging process, with compatible soldering profiles for wave and hand assembly per JEDEC J-STD-020.

DS1230Y-120 Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 28-DIP Module (0.600", 15.24mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 256Kbit

Memory Organization:: 32K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 120ns

Access Time:: 120 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 28-EDIP

DS1230Y-120 FAQ

1.How can I place an order for DS1230Y-120 through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1230Y-120 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1230Y-120 reliable?

The price and inventory of DS1230Y-120 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1230Y-120 is usually 5 days.

3.What payment methods are accepted for DS1230Y-120?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1230Y-120 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1230Y-120?

DS1230Y-120 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1230Y-120 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1230Y-120?

For technical support, including DS1230Y-120 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1230Y-120 requirements.

6.How does Aetrix verify that DS1230Y-120 is sourced from the original manufacturer or authorized distributors?

All DS1230Y-120 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1230Y-120 meets industry standards.

7.What is the process for return or replacement of DS1230Y-120?

All DS1230Y-120 units undergo pre-shipment inspection (PSI). If there is an issue with DS1230Y-120, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1230Y-120 part is unused and in its original packaging.

Return procedure for DS1230Y-120:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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