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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1230Y-120IND

Name: DS1230Y-120IND
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1230Y-120IND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1230Y-120IND

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 28-DIP Module (0.600", 15.24mm)

Datasheet:: DS1230Y-120IND.pdf

Description:: IC NVSRAM 256KBIT PAR 28EDIP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DS1230Y-120IND from Maxim Integrated is a 256k (32k × 8) nonvolatile static RAM with integrated lithium backup, ±10% V_CC tolerance (4.5V–5.5V), 70 ns access time, and industrial temperature rating (–40°C to +85°C). It replaces volatile SRAM, EEPROM, or Flash in battery-backed memory applications requiring data retention without external support circuitry.

For engineers reviewing the DS1230Y-120IND datasheet, DS1230Y-120IND pinout, DS1230Y-120IND application, or DS1230Y-120IND equivalent, key selection criteria include write-protection voltage threshold (4.25V), automatic power-fail detection, JEDEC-standard 28-pin DIP compatibility, and 10-year data retention under V_CC loss.

Technical Context

The DS1230Y-120IND integrates SRAM, lithium battery, and power-monitoring control circuitry into a single JEDEC 28-pin DIP package. Its internal voltage monitor triggers unconditional write protection when V_CC falls below 4.25V and switches to battery power at ~3.0V, ensuring zero-data-loss transitions during power failure.

It operates as a byte-wide parallel memory with full static timing: CE/OE/WE-controlled read/write cycles, no refresh required, and unlimited write endurance. The device uses standard TTL-level inputs and outputs, supports direct substitution for 28-pin 32k×8 SRAMs and 28256 EEPROMs, and requires no external capacitors or support ICs.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	32,768 words × 8 bits - matches standard 32k×8 SRAM footprint and addressing
Access Time	70 ns - enables direct replacement of 70 ns static RAMs without timing redesign
V_CC Operating Range	4.5V to 5.5V (±10%) - accommodates wide supply variation in industrial power rails
Write Protection Threshold	4.25V (min) - initiates automatic data protection before brownout-induced corruption
Data Retention	10 years without power - guaranteed by sealed lithium cell and low standby current (≤600 µA)
Temperature Range	–40°C to +85°C - qualified for industrial embedded systems and harsh-environment operation
Package	28-pin 740-mil Extended DIP - JEDEC-compliant, through-hole mountable, wave-solder compatible

Pinout & Package

DS1230Y-120IND is housed in a JEDEC-standard 28-pin Extended DIP (740-mil width), fully compatible with legacy 32k×8 memory sockets. The package integrates SRAM, lithium battery, and power-switching circuitry in a single hermetically sealed unit.

Pin/Terminal	Circuit Role	Design Meaning
A0–A14	Address Inputs	15-bit address bus supporting full 32k-word addressing; TTL-compatible
DQ0–DQ7	Data I/O	Bi-directional 8-bit data bus; high-impedance during deselect or write cycles
CE	Chip Enable	Active-low chip select; controls device enable and write-cycle initiation timing
WE	Write Enable	Active-low write strobe; determines write start/stop with CE per tWP timing
OE	Output Enable	Active-low output control; enables data drivers only during valid read cycles
V_CC	Power Supply	+5V supply input; powers logic and SRAM; monitored for fail-detection
GND	Ground	Reference return path for all signals and internal circuitry
NC	No Connect	Pins 1, 3, 4, and 33 are unconnected; must remain floating or grounded per layout guidelines

Key Features

Feature	Design Value
Automatic Power-Fail Response	Switches to lithium backup and enables write protection within 1.5 µs of V_CC drop below threshold
Freshness Seal	Lithium source remains electrically disconnected until first V_CC > 4.25V application, preserving full 10-year capacity
Unlimited Write Cycles	No wear-out mechanism - supports continuous logging or real-time data capture without endurance limits
Direct Pin-Compatible Replacement	Matches 28-pin DIP pinout of 32k×8 SRAMs and 28256 EEPROMs, enabling drop-in upgrade
Low-Power CMOS Operation	Standby current ≤600 µA ensures minimal battery drain during extended backup periods

Applications

Industrial Data Logger	Medical Device Memory Backup
Use Scenario: Continuous sensor sampling in remote environmental monitoring units powered by intermittent solar/battery sources. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing timestamped measurements during main power loss; retains data across multi-day outages. Use Value: Eliminates need for EEPROM write delays or Flash erase cycles, enabling sub-millisecond data capture even during brownouts.	Use Scenario: Critical patient parameter storage in portable defibrillators and infusion pumps where power interruption must not corrupt therapy history. IC Role / Device Role / Timing Role: Primary backup memory holding last 72 hours of ECG waveforms and alarm logs; activated automatically on AC failure. Use Value: Guarantees zero-data-loss transition at ~3.0V V_CC threshold, meeting IEC 62304 Class C software safety requirements.
Factory Automation PLC	Avionics Black Box Recorder
Use Scenario: Storing machine state, recipe parameters, and fault codes in programmable logic controllers exposed to voltage sags on factory floors. IC Role / Device Role / Timing Role: Volatile memory replacement retaining operational context across controlled shutdowns and unexpected line drops. Use Value: Enables deterministic restart after power recovery without reinitialization or configuration reload.	Use Scenario: Crash-protected flight data recording in unmanned aerial vehicles operating in extreme thermal environments. IC Role / Device Role / Timing Role: High-reliability memory buffer capturing GPS, IMU, and telemetry streams; rated for –40°C to +85°C operation. Use Value: Maintains 10-year data integrity without thermal cycling degradation, satisfying DO-160 Section 25 environmental compliance.

Industrial Data Logger

Medical Device Memory Backup

Use Scenario: Continuous sensor sampling in remote environmental monitoring units powered by intermittent solar/battery sources.

IC Role / Device Role / Timing Role: Nonvolatile SRAM storing timestamped measurements during main power loss; retains data across multi-day outages.

Use Value: Eliminates need for EEPROM write delays or Flash erase cycles, enabling sub-millisecond data capture even during brownouts.

Use Scenario: Critical patient parameter storage in portable defibrillators and infusion pumps where power interruption must not corrupt therapy history.

IC Role / Device Role / Timing Role: Primary backup memory holding last 72 hours of ECG waveforms and alarm logs; activated automatically on AC failure.

Use Value: Guarantees zero-data-loss transition at ~3.0V V_CC threshold, meeting IEC 62304 Class C software safety requirements.

Factory Automation PLC

Avionics Black Box Recorder

Use Scenario: Storing machine state, recipe parameters, and fault codes in programmable logic controllers exposed to voltage sags on factory floors.

IC Role / Device Role / Timing Role: Volatile memory replacement retaining operational context across controlled shutdowns and unexpected line drops.

Use Value: Enables deterministic restart after power recovery without reinitialization or configuration reload.

Use Scenario: Crash-protected flight data recording in unmanned aerial vehicles operating in extreme thermal environments.

IC Role / Device Role / Timing Role: High-reliability memory buffer capturing GPS, IMU, and telemetry streams; rated for –40°C to +85°C operation.

Use Value: Maintains 10-year data integrity without thermal cycling degradation, satisfying DO-160 Section 25 environmental compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1230AB-70IND+	Narrower V_CC range (4.75V–5.25V); higher write-protection threshold (4.50V)	Better suited for stable 5V rails; less tolerant of undervoltage brownouts	Select when system V_CC regulation is tight and early write protection is preferred
STK12C68-70I	Same 256k organization and 70 ns speed, but uses external battery; no integrated power switch	Requires external backup management circuitry and board space for battery holder	Choose when long-term field serviceability (battery replacement) is prioritized over integration

Compared with DS1230AB-70IND+, the DS1230Y-120IND offers wider supply tolerance and earlier write protection-critical for unregulated industrial supplies-while STK12C68-70I trades integration for serviceable battery access, increasing BOM count and layout complexity.

Availability

DS1230Y-120IND is available at Aetrix Electronics and suitable for industrial data loggers, medical device memory backup, and factory automation PLCs requiring stable component supply, long-lifecycle support, and guaranteed RoHS-compliant sourcing.

Supply support for DS1230Y-120IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and nonvolatile memory solutions for industrial, medical, and automotive applications.

The DS1230Y-120IND belongs to Maxim's nonvolatile SRAM product line, engineered to eliminate external backup circuitry while delivering guaranteed 10-year data retention in harsh, power-unstable environments.

FAQ

What is the guaranteed data retention period for DS1230Y-120IND when external power is removed?

The DS1230Y-120IND guarantees 10 years of data retention in the absence of external power, based on built-in lithium cell capacity, low standby current (≤600 µA), and hermetic sealing. This specification applies from the moment V_CC is first applied above 4.25V and accumulates only during actual V_CC-off periods-not calendar time.

Does DS1230Y-120IND require external components for battery backup operation?

No, DS1230Y-120IND requires no external components for battery backup operation. It integrates the lithium energy source, power-switching circuitry, and SRAM die in a single JEDEC 28-pin DIP package. The internal monitor automatically disconnects the battery until first power-up and engages it during V_CC failure-no capacitors, diodes, or controllers needed.

What is the write-protection voltage threshold for DS1230Y-120IND, and how does it behave during power loss?

The DS1230Y-120IND asserts unconditional write protection when V_CC falls below 4.25V (min), preventing data corruption during brownout. At ~3.0V, it switches to lithium power and places all inputs in "don't care" state and outputs in high-impedance-ensuring zero-risk data hold without processor intervention.

Is DS1230Y-120IND pin-compatible with standard 28-pin 32k×8 SRAMs and EEPROMs?

Yes, DS1230Y-120IND uses the JEDEC-standard 28-pin DIP pinout and matches both 32k×8 volatile SRAMs and 28256 EEPROMs. Its A0–A14, DQ0–DQ7, CE, WE, OE, V_CC, and GND assignments align exactly-enabling direct socket replacement without PCB modification.

What is the maximum operating temperature range specified for DS1230Y-120IND?

The DS1230Y-120IND is specified for industrial temperature operation from –40°C to +85°C, validated across all DC and AC electrical parameters. This range covers demanding applications including factory floor controllers, outdoor instrumentation, and transportation electronics where ambient thermal extremes are routine.

DS1230Y-120IND Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 28-DIP Module (0.600", 15.24mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 256Kbit

Memory Organization:: 32K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 120ns

Access Time:: 120 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 28-EDIP

DS1230Y-120IND FAQ

1.How can I place an order for DS1230Y-120IND through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1230Y-120IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1230Y-120IND reliable?

The price and inventory of DS1230Y-120IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1230Y-120IND is usually 5 days.

3.What payment methods are accepted for DS1230Y-120IND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1230Y-120IND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1230Y-120IND?

DS1230Y-120IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1230Y-120IND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1230Y-120IND?

For technical support, including DS1230Y-120IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1230Y-120IND requirements.

6.How does Aetrix verify that DS1230Y-120IND is sourced from the original manufacturer or authorized distributors?

All DS1230Y-120IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1230Y-120IND meets industry standards.

7.What is the process for return or replacement of DS1230Y-120IND?

All DS1230Y-120IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1230Y-120IND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1230Y-120IND part is unused and in its original packaging.

Return procedure for DS1230Y-120IND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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