Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Analog Devices Inc./Maxim Integrated DS1230Y-150

Part No.:
DS1230Y-150
Manufacturer:
Analog Devices Inc./Maxim Integrated
Category:
Memory
Package:
28-DIP Module (0.600", 15.24mm)
Datasheet:
AetrixDS1230Y-150.pdf
Description:
IC NVSRAM 256KBIT PAR 28EDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,133

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DS1230Y-150 from Maxim Integrated is a 256k (32k × 8) nonvolatile static RAM with integrated lithium backup, ±10% VCC operation (4.5V–5.5V), 70 ns access time, and 10-year data retention without external power. It functions as a drop-in replacement for volatile SRAMs in real-time clock and configuration storage applications where power loss resilience is critical.

For engineers reviewing the DS1230Y-150 datasheet, DS1230Y-150 pinout, DS1230Y-150 application, or DS1230Y-150 equivalent, key selection criteria include write-protection voltage threshold (4.25V), JEDEC-standard 28-pin DIP compatibility, battery-freshness seal behavior, and industrial-grade temperature support when ordered with IND suffix.

Technical Context

The DS1230Y-150 integrates SRAM, lithium battery, and autonomous power-fail detection circuitry into a single monolithic 28-pin DIP package. Its control logic continuously monitors VCC, triggering automatic write protection and battery switchover when voltage falls below 4.25V - ensuring data integrity during brownout or complete power loss.

It operates as a fully static, byte-wide memory with standard parallel interface timing: CE/OE/WE control signals, 15 address lines (A0–A14), and 8 bidirectional data lines (DQ0–DQ7). No external support circuitry is required for microprocessor interfacing or battery management.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Size 262,144 bits (32,768 × 8), directly replaces 32k × 8 volatile SRAMs without software or address decoding changes
Access Time 70 ns - enables direct interface with 14 MHz Z80, 80C88, or 68000-class microprocessors without wait states
VCC Range 4.5V to 5.5V (±10%) - supports wide-input industrial power rails and tolerates unregulated 5V supplies
Write Protection Threshold 4.25V (min) - triggers unconditional write lock and high-Z outputs before data corruption occurs during decay
Data Retention 10 years minimum without external power - guaranteed by sealed lithium source and internal power-switching architecture
Operating Temp 0°C to +70°C (commercial); -40°C to +85°C with IND suffix - validated across full range for embedded control systems
Package JEDEC-standard 28-pin 740-mil Extended DIP - pin-compatible with legacy 28-pin SRAMs and 28256 EEPROMs

Pinout & Package

DS1230Y-150 uses a 28-pin JEDEC-standard Extended DIP (740-mil) package with integrated lithium battery and nonvolatile control circuitry. The package is wave-solderable only (not reflow-compatible) and features a freshness seal that electrically isolates the battery until first VCC application above 4.25V.

Pin/Terminal Circuit Role Design Meaning
A0–A14 Address Inputs 15-bit address bus supporting full 32k-word addressing; TTL-compatible inputs with ≤0.8V low / ≥2.2V high thresholds
DQ0–DQ7 Data I/O Bidirectional CMOS data bus; high-impedance on power loss or during write protection activation
CE Chip Enable Active-low chip select; initiates read/write cycles only when low; forces high-Z outputs when inactive
WE Write Enable Active-low write strobe; controls data latching; output drivers disabled when WE low and OE active
OE Output Enable Active-low output enable; decouples data bus from outputs during reads to prevent contention
VCC Power Supply +5V supply input; powers SRAM core and control logic; monitored continuously for fail-detect response
GND Ground Reference return path for all signals and internal circuitry; must be low-impedance for reliable power switching
NC No Connect Pins 1, 3, 4, and 33 are internally unused; must remain unconnected per datasheet to avoid latch-up risk

Key Features

Feature Design Value
Automatic Power-Fail Response Sub-µs detection of VCC decay below 4.25V triggers immediate write protection and battery switchover - no firmware or external supervisor required
Lithium Freshness Seal Battery remains electrically disconnected until first VCC >4.25V is applied - preserves full 10-year retention capacity from shipment date
Unlimited Write Cycles No endurance limit on write operations - eliminates wear-leveling overhead and flash/EEPROM rewrite constraints
Standard Parallel Interface Fully compatible with industry-standard SRAM timing and control signals (CE/OE/WE), enabling plug-and-play replacement
Low-Power Standby 50–150 µA standby current (CE = VCC−0.5V) - suitable for battery-backed systems requiring multi-year shelf life

Applications

Real-Time Clock (RTC) Backup Industrial PLC Configuration Storage

Use Scenario: Maintaining RTC registers and calendar data across AC mains failure or battery swap in metering and automation panels.

IC Role / Device Role / Timing Role: Nonvolatile SRAM providing zero-latency, byte-accessible storage for timekeeping registers and alarm settings.

Use Value: Eliminates need for separate RTC IC + EEPROM combo; retains accurate time for ≥10 years without refresh or checksum validation.

Use Scenario: Storing ladder logic parameters, calibration coefficients, and I/O mapping in programmable logic controllers deployed in factory environments.

IC Role / Device Role / Timing Role: Configuration memory holding user-defined operational constants that must survive unexpected shutdowns.

Use Value: Guarantees deterministic startup after power interruption - no boot-time reinitialization or parameter reload required.

Medical Device Event Logging Avionics System State Capture

Use Scenario: Recording diagnostic timestamps, sensor fault events, and therapy delivery logs in portable infusion pumps and defibrillators.

IC Role / Device Role / Timing Role: High-reliability data buffer capturing time-critical safety events with guaranteed persistence during battery depletion.

Use Value: Meets IEC 62304 Class C software requirements for persistent event storage - no data loss even during rapid VCC collapse.

Use Scenario: Capturing flight control surface positions, sensor health status, and fault flags prior to emergency power-down in unmanned aerial vehicles.

IC Role / Device Role / Timing Role: Last-state snapshot memory preserving critical telemetry at the instant of power failure for post-flight analysis.

Use Value: Provides deterministic, sub-70 ns capture window - ensures no state transition is missed during brownout sequences.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
DS1230AB-70+ Narrower VCC tolerance (±5%, 4.75–5.25V); higher write-protection threshold (4.50V min) Better suited for regulated 5V systems where tighter supply control is available Select DS1230AB-70+ when system VCC variation is <±5% and higher noise immunity on power-fail detection is needed
STK12C68-AW50 Same 256k size but 50 ns access time; requires external battery and discrete control logic Higher board area and BOM count due to external components; no integrated freshness seal Choose STK12C68-AW50 only if faster access is mandatory and design can accommodate external battery management

Compared with DS1230AB-70+ and STK12C68-AW50, the DS1230Y-150 offers broader supply tolerance and integrated battery management at the cost of slightly slower access time - making it optimal for cost-sensitive, unregulated 5V industrial designs requiring minimal footprint and zero external components.

Availability

DS1230Y-150 is available at Aetrix Electronics and suitable for real-time clock backup, industrial PLC configuration storage, and medical device event logging requiring stable component supply and long-term lifecycle assurance.

Supply support for DS1230Y-150 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in precision analog, mixed-signal, and power management ICs for industrial, automotive, and communications applications.

The DS1230Y-150 belongs to Maxim's nonvolatile SRAM product line, designed specifically to eliminate external battery and supervisor circuitry in mission-critical data retention applications.

FAQ

What is the guaranteed data retention period for DS1230Y-150?

The DS1230Y-150 guarantees a minimum 10-year data retention period in the absence of external power, measured from the time VCC is first applied above 4.25V. This retention is ensured by the integrated lithium energy source and internal power-switching architecture - no periodic refresh or external circuitry is required to maintain stored data over this duration. The DS1230Y-150 achieves this through process-controlled component selection and hermetic sealing of the battery cell.

Does DS1230Y-150 require external components to function as a nonvolatile memory?

No, the DS1230Y-150 requires no external components to operate as a nonvolatile memory. It integrates the SRAM array, lithium backup battery, and autonomous power-fail detection and switchover circuitry into a single 28-pin DIP package. The DS1230Y-150 performs automatic write protection and battery activation without any external supervisors, capacitors, or diodes - simplifying design and reducing BOM count compared to discrete SRAM + battery solutions.

What is the difference between DS1230Y-150 and DS1230AB-70+?

The DS1230Y-150 and DS1230AB-70+ share identical memory size, speed (70 ns), and package, but differ in supply voltage tolerance and write-protection threshold. The DS1230Y-150 supports ±10% VCC (4.5V–5.5V) and triggers write protection at 4.25V, while the DS1230AB-70+ requires ±5% (4.75V–5.25V) and protects at 4.50V. This makes the DS1230Y-150 more suitable for unregulated 5V rails, whereas DS1230AB-70+ offers tighter noise margins in clean power environments.

Can DS1230Y-150 be used in surface-mount designs?

No, the DS1230Y-150 is supplied only in a 28-pin Extended DIP (EDIP) package intended for through-hole mounting and wave soldering. It is not rated for reflow soldering due to thermal sensitivity of the integrated lithium battery. For surface-mount applications, the DS1230YP-70+ PowerCap Module variant must be used - which separates the SRAM module from the snap-on DS9034PC+ PowerCap to withstand reflow temperatures.

How does the freshness seal on DS1230Y-150 preserve battery life?

The DS1230Y-150 ships with its lithium energy source electrically disconnected via an internal switch. This "freshness seal" prevents self-discharge during storage and shipping. Only upon first application of VCC ≥4.25V does the internal circuitry close the connection - initiating the 10-year retention countdown from that moment. This ensures the DS1230Y-150 delivers full rated retention regardless of inventory dwell time, unlike pre-connected battery solutions that degrade during shelf storage.

DS1230Y-150 Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc./Maxim Integrated
Series:
-
Package/Case:
28-DIP Module (0.600", 15.24mm)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
150ns
Access Time:
150 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
28-EDIP

DS1230Y-150 FAQ

1.How can I place an order for DS1230Y-150 through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1230Y-150 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1230Y-150 reliable?

The price and inventory of DS1230Y-150 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1230Y-150 is usually 5 days.

3.What payment methods are accepted for DS1230Y-150?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1230Y-150 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1230Y-150?

DS1230Y-150 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1230Y-150 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1230Y-150?

For technical support, including DS1230Y-150 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1230Y-150 requirements.

6.How does Aetrix verify that DS1230Y-150 is sourced from the original manufacturer or authorized distributors?

All DS1230Y-150 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1230Y-150 meets industry standards.

7.What is the process for return or replacement of DS1230Y-150?

All DS1230Y-150 units undergo pre-shipment inspection (PSI). If there is an issue with DS1230Y-150, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1230Y-150 part is unused and in its original packaging.

Return procedure for DS1230Y-150:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DS1230Y-150 Tags

  • DS1230Y-150
  • DS1230Y-150 PDF
  • DS1230Y-150 Datasheet
  • DS1230Y-150 Specifications
  • DS1230Y-150 Images
  • Analog Devices Inc./Maxim Integrated
  • Analog Devices Inc./Maxim Integrated DS1230Y-150
  • Buy DS1230Y-150
  • DS1230Y-150 Price
  • DS1230Y-150 Distributor
  • DS1230Y-150 Supplier
  • DS1230Y-150 Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER