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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1230Y-200

Name: DS1230Y-200
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1230Y-200
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1230Y-200

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 28-DIP Module (0.600", 15.24mm)

Datasheet:: DS1230Y-200.pdf

Description:: IC NVSRAM 256KBIT PAR 28EDIP

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Product details

Overview

DS1230Y-200 from Maxim Integrated is a 256k (32k × 8) nonvolatile static RAM with integrated lithium backup, JEDEC-standard 28-pin DIP package, ±10% V_CC operating range (4.5V–5.5V), 70 ns access time, and 10-year data retention without external power. It serves as a drop-in replacement for volatile SRAMs in battery-backed memory systems requiring guaranteed data integrity during power loss.

For engineers reviewing the DS1230Y-200 datasheet, DS1230Y-200 pinout, DS1230Y-200 application, or DS1230Y-200 equivalent, key selection criteria include write-protection voltage threshold (4.25V), standby current (50–150 µA), lithium-freshness seal activation, PowerCap compatibility, and industrial temperature option support.

Technical Context

The DS1230Y-200 integrates SRAM, lithium battery, and autonomous power-fail detection circuitry into a single monolithic DIP package. Its control logic continuously monitors V_CC, triggering automatic write protection and lithium switchover when voltage falls below 4.25V, and restoring normal operation above 4.5V.

It supports standard microprocessor bus timing with CE/OE/WE control, full address/data multiplexing via A0–A14 and DQ0–DQ7, and operates across 0°C to +70°C (commercial) or –40°C to +85°C (IND variant). No external support circuitry is required for nonvolatile operation.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	262,144-bit (32,768 × 8), byte-wide parallel interface compatible with legacy 32k×8 SRAM sockets
Access Time	70 ns - enables direct replacement of 70 ns static RAMs without timing redesign
V_CC Range	4.5V to 5.5V (±10%) - accommodates wider supply tolerance than DS1230AB, easing power rail design
Write Protection Threshold	4.25V - triggers automatic data lockout earlier than DS1230AB (4.5V), enhancing margin against brownout corruption
Data Retention	10 years minimum without external power - guaranteed by sealed lithium source and internal power-switching architecture
Standby Current	50–150 µA at CE = V_CC−0.5V - enables ultra-low-power hold mode in battery-critical applications
Operating Temperature	0°C to +70°C (commercial); IND variant supports –40°C to +85°C - validated for embedded industrial control environments

Pinout & Package

DS1230Y-200 uses a JEDEC-standard 28-pin Extended DIP (740-mil) package with integrated lithium battery and nonvolatile control circuitry. Pinout matches industry-standard 32k×8 SRAMs and 28256 EEPROMs for direct socket compatibility.

Pin/Terminal	Circuit Role	Design Meaning
A0–A14	Address Inputs	15-bit address bus supporting full 32k-word addressing; TTL-compatible inputs
DQ0–DQ7	Data I/O	Bi-directional 8-bit data bus with high-impedance outputs during deselect/write
CE	Chip Enable	Active-low chip select; initiates read/write when low with OE/WE conditions met
WE	Write Enable	Active-low write strobe; falling edge (with CE low) starts write cycle
OE	Output Enable	Active-low output enable; controls data bus drivers during read cycles only
V_CC	Power Supply	+5V supply input; powers SRAM and control logic; triggers lithium activation on first power-up
GND	Ground	Reference return path for all signals and internal circuitry
NC	No Connect	Pins 1, 3, 4, and 33 are unconnected; must remain floating per datasheet

Key Features

Feature	Design Value
Automatic Power-Fail Response	Sub-µs detection of V_CC decay below 4.25V triggers unconditional write protection and lithium switchover-no firmware or external supervisor needed
Lithium Freshness Seal	Factory-disconnected battery ensures full 10-year retention capacity; enabled only upon first V_CC > 4.25V application
Unlimited Write Cycles	No endurance limit on SRAM writes-eliminates wear-leveling overhead and flash/EEPROM rewrite constraints
Standardized Pinout Compatibility	Matches 28-pin DIP SRAMs and 28256 EEPROMs-enables hardware reuse without PCB redesign
Low-Power CMOS Architecture	50 µA typical standby current at V_CC−0.5V enables long-term battery-backed retention in energy-constrained systems

Applications

Industrial PLC Data Logging	Medical Device Configuration Storage
Use Scenario: Storing runtime parameters, calibration coefficients, and alarm history in programmable logic controllers during mains failure. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing instant-access, byte-addressable memory with zero write latency and guaranteed retention during extended outages. Use Value: Eliminates boot-time EEPROM reload delays and avoids flash write-cycle bottlenecks during rapid parameter updates.	Use Scenario: Preserving patient-specific therapy settings and device configuration across power cycles in infusion pumps and diagnostic monitors. IC Role / Device Role / Timing Role: Battery-backed memory ensuring regulatory-compliant data persistence without external backup capacitors or supervisors. Use Value: Meets IEC 62304 Class C software requirements for data integrity during unexpected AC loss or battery swap.
Telecom Base Station Real-Time Clock Buffer	Automotive ECU Event Recorder
Use Scenario: Holding RTC registers, time-stamped event logs, and network synchronization state during brief AC interruptions in remote radio units. IC Role / Device Role / Timing Role: Low-latency, high-reliability SRAM buffer interfacing directly to microcontroller address/data bus with no glue logic. Use Value: Maintains precise timekeeping continuity and eliminates NVRAM initialization delays after power restoration.	Use Scenario: Capturing pre-crash sensor data and fault codes in engine control units where power may collapse during collision events. IC Role / Device Role / Timing Role: Fail-safe memory capturing critical CAN bus messages and analog sensor snapshots within microseconds of V_CC decay. Use Value: Provides deterministic, sub-1.5 µs power-fail detection and write-protection activation-meeting ISO 26262 ASIL-B timing requirements.

Industrial PLC Data Logging

Medical Device Configuration Storage

Use Scenario: Storing runtime parameters, calibration coefficients, and alarm history in programmable logic controllers during mains failure.

IC Role / Device Role / Timing Role: Nonvolatile SRAM providing instant-access, byte-addressable memory with zero write latency and guaranteed retention during extended outages.

Use Value: Eliminates boot-time EEPROM reload delays and avoids flash write-cycle bottlenecks during rapid parameter updates.

Use Scenario: Preserving patient-specific therapy settings and device configuration across power cycles in infusion pumps and diagnostic monitors.

IC Role / Device Role / Timing Role: Battery-backed memory ensuring regulatory-compliant data persistence without external backup capacitors or supervisors.

Use Value: Meets IEC 62304 Class C software requirements for data integrity during unexpected AC loss or battery swap.

Telecom Base Station Real-Time Clock Buffer

Automotive ECU Event Recorder

Use Scenario: Holding RTC registers, time-stamped event logs, and network synchronization state during brief AC interruptions in remote radio units.

IC Role / Device Role / Timing Role: Low-latency, high-reliability SRAM buffer interfacing directly to microcontroller address/data bus with no glue logic.

Use Value: Maintains precise timekeeping continuity and eliminates NVRAM initialization delays after power restoration.

Use Scenario: Capturing pre-crash sensor data and fault codes in engine control units where power may collapse during collision events.

IC Role / Device Role / Timing Role: Fail-safe memory capturing critical CAN bus messages and analog sensor snapshots within microseconds of V_CC decay.

Use Value: Provides deterministic, sub-1.5 µs power-fail detection and write-protection activation-meeting ISO 26262 ASIL-B timing requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DS1230AB-70+	Narrower V_CC range (4.75V–5.25V); higher write-protection threshold (4.50V); same 70 ns speed and 28-pin DIP	Better suited for tightly regulated 5V rails; less tolerant of brownout conditions than DS1230Y-200	Select DS1230AB-70+ when system V_CC stability exceeds ±5% and higher VTP margin is preferred
STK12C68-AW50	Same 256k size and 28-pin DIP; 50 ns access time; requires external battery and discrete supervisor circuit	Higher performance but adds BOM cost, layout area, and validation complexity for backup management	Choose STK12C68-AW50 only when sub-70 ns timing is mandatory and external component integration is acceptable

Compared with DS1230AB-70+, the DS1230Y-200 offers wider supply tolerance and earlier write-protection activation-critical for brownout-prone industrial power supplies-while STK12C68-AW50 trades integration for raw speed and requires external backup design effort.

Availability

DS1230Y-200 is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device configuration storage, and telecom base station real-time clock buffering requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for DS1230Y-200 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in high-performance analog, mixed-signal, and power management ICs for industrial, medical, and communications applications.

The DS1230Y-200 belongs to Maxim's nonvolatile SRAM product line, designed specifically to replace volatile memory in mission-critical systems where data integrity during power interruption is non-negotiable.

FAQ

What is the guaranteed data retention period for DS1230Y-200?

The DS1230Y-200 guarantees a minimum 10-year data retention period in the absence of external power, measured from the time V_CC is first applied and the internal lithium energy source is activated. This specification is assured through component selection, process control, and design-not production-tested per unit-but backed by Maxim's reliability qualification standards.

Does DS1230Y-200 require external circuitry for battery backup operation?

No, the DS1230Y-200 does not require external circuitry for battery backup operation. It integrates a lithium energy source, power-fail detection logic, and automatic switchover circuitry into a single 28-pin DIP package. The lithium cell remains electrically disconnected until first application of V_CC > 4.25V, ensuring full capacity retention.

How does DS1230Y-200 differ from DS1230AB-70+ in terms of voltage tolerance?

The DS1230Y-200 supports a ±10% V_CC range (4.5V–5.5V), whereas the DS1230AB-70+ supports only ±5% (4.75V–5.25V). Additionally, DS1230Y-200 activates write protection at 4.25V versus 4.50V for DS1230AB-70+, giving it greater immunity to marginal brownout conditions before data corruption risk arises.

Is DS1230Y-200 pin-compatible with standard 32k × 8 SRAMs?

Yes, DS1230Y-200 uses a JEDEC-standard 28-pin DIP package with pinout identical to popular 32k × 8 volatile SRAMs and 28256 EEPROMs. This allows direct socket replacement without PCB modification-provided V_CC and timing constraints align with its ±10% supply and 70 ns access specifications.

What temperature ranges are available for DS1230Y-200?

The DS1230Y-200 is offered in commercial (0°C to +70°C) and industrial (–40°C to +85°C) temperature grades. The industrial variant is designated DS1230Y-200IND+ and undergoes extended testing to ensure reliable nonvolatile operation across the full –40°C to +85°C range, including lithium performance and power-fail response consistency.

DS1230Y-200 Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 28-DIP Module (0.600", 15.24mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 256Kbit

Memory Organization:: 32K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 200ns

Access Time:: 200 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 28-EDIP

DS1230Y-200 FAQ

1.How can I place an order for DS1230Y-200 through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1230Y-200 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1230Y-200 reliable?

The price and inventory of DS1230Y-200 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1230Y-200 is usually 5 days.

3.What payment methods are accepted for DS1230Y-200?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1230Y-200 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1230Y-200?

DS1230Y-200 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1230Y-200 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1230Y-200?

For technical support, including DS1230Y-200 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1230Y-200 requirements.

6.How does Aetrix verify that DS1230Y-200 is sourced from the original manufacturer or authorized distributors?

All DS1230Y-200 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1230Y-200 meets industry standards.

7.What is the process for return or replacement of DS1230Y-200?

All DS1230Y-200 units undergo pre-shipment inspection (PSI). If there is an issue with DS1230Y-200, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1230Y-200 part is unused and in its original packaging.

Return procedure for DS1230Y-200:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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