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Analog Devices Inc./Maxim Integrated DS1230Y-70IND
- Part No.:
- DS1230Y-70IND
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 28-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1230Y-70IND.pdf
- Description:
- IC NVSRAM 256KBIT PAR 28EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:4,981
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Product details
Overview
DS1230Y-70IND from Maxim Integrated is a 256k (32k × 8) nonvolatile static RAM with integrated lithium backup, JEDEC-standard 28-pin DIP package, ±10% VCC tolerance (4.5V–5.5V), 70 ns access time, and industrial temperature range (–40°C to +85°C). It replaces volatile SRAM in battery-backed memory systems for real-time clock data logging, configuration storage, and firmware parameter retention.
For engineers reviewing the DS1230Y-70IND datasheet, DS1230Y-70IND pinout, DS1230Y-70IND application, or DS1230Y-70IND equivalent, key selection criteria include write-protection voltage threshold (4.25V), automatic power-fail detection, unlimited write cycles, and direct drop-in compatibility with legacy 28-pin 32k×8 SRAM footprints.
Technical Context
The DS1230Y-70IND integrates a 262,144-bit static RAM array, lithium energy source, and autonomous power-monitoring circuitry that triggers unconditional write protection when VCC falls below 4.25V. Its control logic ensures all inputs become "don't care" and outputs enter high-impedance state during power loss.
It operates in three distinct modes: normal read/write (VCC ≥ 4.5V), data retention (VCC < 3.0V, lithium active), and transition (3.0V ≤ VCC < 4.5V, write-protected). The device requires no external support circuitry and maintains full functionality across its specified industrial temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 32,768 words × 8 bits - matches standard 32k×8 SRAM footprint and interface timing |
| Access Time | 70 ns - enables direct replacement of 70 ns volatile SRAM without timing redesign |
| VCC Operating Range | 4.5V to 5.5V (±10%) - supports wide-input power rails common in industrial controllers |
| Write Protection Threshold | 4.25V (min) - initiates automatic data lock before brownout corrupts writes |
| Data Retention | 10 years minimum without external power - guaranteed by sealed lithium cell and low-leakage CMOS design |
| Temperature Range | –40°C to +85°C - qualified for industrial automation, metering, and embedded telemetry |
| Package | 28-pin 740-mil Extended DIP - JEDEC-compliant, wave-solderable, pin-compatible with 28256 EEPROMs |
Pinout & Package
DS1230Y-70IND uses a JEDEC-standard 28-pin DIP (740-mil extended) package with integrated lithium battery and nonvolatile control circuitry. No external backup components are required.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit address bus supporting full 32k-word addressing; TTL-compatible input thresholds |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus with 2mA sink/1mA source drive; high-impedance on deselect |
| CE | Chip Enable | Active-low chip select; controls memory enable and power-down entry timing (tPD = 1.5 µs) |
| WE | Write Enable | Active-low write strobe; coordinates with CE to define write cycle start/stop per JEDEC timing |
| OE | Output Enable | Active-low output control; enables data drivers only during valid read cycles (tOE = 35 ns) |
| VCC | Power Supply | +5V supply with ±10% tolerance; powers SRAM core and monitoring circuitry |
| GND | Ground | Reference return for all signals and internal lithium switching circuit |
| NC | No Connect | Pins 1, 3, 4, and 33 are unconnected; no internal bonding or function |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Response | Switches to lithium backup and enables write protection within 1.5 µs of VCC falling below 4.25V |
| Lithium Freshness Seal | Lithium cell remains electrically disconnected until first VCC application >4.25V, preserving full 10-year capacity |
| Unlimited Write Cycles | No endurance limit - eliminates wear-leveling firmware and write-cycle counters in host system |
| Direct SRAM Replacement | Pinout and timing match 28-pin 32k×8 volatile SRAMs and 28256 EEPROMs, enabling drop-in upgrade |
| Low-Power Standby | 600 µA max ICCS1 at CE = 2.2V - reduces system standby current in always-on industrial nodes |
Applications
| Industrial Data Logger | Smart Energy Meter |
|---|---|
|
Use Scenario: Continuous recording of voltage, current, and tariff data during grid outages. IC Role / Device Role / Timing Role: Nonvolatile SRAM storing last-valid measurement set and timestamp before AC power loss. Use Value: Guarantees 10-year data retention without supercapacitors or external battery management, reducing BOM cost and board space. |
Use Scenario: Storing tamper logs, calibration constants, and billing cycle data across frequent power interruptions. IC Role / Device Role / Timing Role: Primary configuration and event memory with automatic write-protection on brownout. Use Value: Eliminates EEPROM write delays and flash erase cycles, enabling sub-millisecond parameter updates during live metering. |
| Programmable Logic Controller (PLC) | Medical Diagnostic Equipment |
|
Use Scenario: Preserving ladder logic state, I/O mapping, and fault history during unexpected main power loss. IC Role / Device Role / Timing Role: Volatile SRAM replacement with fail-safe data hold during controller reboot sequences. Use Value: Maintains deterministic startup behavior and avoids reinitialization delays after power recovery. |
Use Scenario: Storing patient calibration profiles, sensor offsets, and diagnostic session history between powered sessions. IC Role / Device Role / Timing Role: Secure, long-term parameter storage meeting IEC 62304 Class B software requirements. Use Value: Provides auditable, non-erasable memory traceability without requiring external secure elements or cryptographic keys. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1230AB-70IND+ | Narrower VCC tolerance (±5%, 4.75–5.25V); higher write-protection threshold (4.5V) | Better suited for stable 5V rails; less tolerant of wide-input industrial supplies | Select DS1230AB-70IND+ if system VCC stays within ±5%; otherwise DS1230Y-70IND offers wider margin. |
| STK12C68-AW50I | 50 ns access time; 3.3V/5V dual-supply option; different pinout (28-pin SOIC) | Requires PCB layout change; lacks integrated DIP package and freshness seal | Choose STK12C68-AW50I only for speed-critical designs needing 50 ns access; not pin-compatible. |
Compared with DS1230AB-70IND+, DS1230Y-70IND provides broader VCC tolerance for variable-input environments, while STK12C68-AW50I trades pin compatibility for faster access and SOIC packaging-neither is a drop-in replacement without hardware revision.
Availability
DS1230Y-70IND is available at Aetrix Electronics and suitable for industrial data loggers, smart energy meters, and programmable logic controllers requiring stable component supply, long-life nonvolatile memory, and RoHS-compliant through-hole assembly.
Supply support for DS1230Y-70IND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and nonvolatile memory solutions for industrial, automotive, and communications markets.
The DS1230Y-70IND belongs to Maxim's nonvolatile SRAM product line, engineered to eliminate external battery management and provide seamless, pin-compatible upgrades from volatile memory in mission-critical embedded systems.
FAQ
What is the guaranteed data retention period for DS1230Y-70IND?
The DS1230Y-70IND guarantees a minimum 10-year data retention period in the absence of external power, measured from the time VCC is first applied above 4.25V. This specification is assured by component selection, process control, and internal lithium cell design-not extrapolated or estimated. The DS1230Y-70IND achieves this using an electrically disconnected lithium source until initial power-up, preserving full capacity.
Does DS1230Y-70IND require external circuitry for battery backup operation?
No, the DS1230Y-70IND requires no external circuitry for battery backup operation. Its integrated lithium energy source and power-monitoring control circuitry automatically switch to backup mode when VCC falls below 4.25V. The DS1230Y-70IND handles all voltage sensing, write protection, and power routing internally-enabling true single-component nonvolatile memory implementation.
Is DS1230Y-70IND pin-compatible with standard 28-pin 32k×8 SRAMs?
Yes, the DS1230Y-70IND uses a JEDEC-standard 28-pin DIP package with identical pinout to conventional 32k×8 volatile SRAMs and 28256 EEPROMs. Its A0–A14, DQ0–DQ7, CE, WE, OE, VCC, and GND assignments match industry-standard footprints-allowing direct PCB replacement without layout changes. The DS1230Y-70IND retains NC pins at positions 1, 3, 4, and 33 as specified.
What is the write-protection voltage threshold for DS1230Y-70IND?
The DS1230Y-70IND activates unconditional write protection when VCC falls to 4.25V (minimum), with typical activation at 4.37V and maximum at 4.5V. This threshold is tighter than the DS1230AB variant (4.50–4.75V), making the DS1230Y-70IND more tolerant of marginal 5V supplies in industrial environments where rail droop is common.
Can DS1230Y-70IND be used in surface-mount applications?
No, the DS1230Y-70IND is packaged exclusively in a 28-pin 740-mil Extended DIP (EDIP) intended for through-hole mounting and wave soldering. For surface-mount applications, Maxim offers the DS1230YP-70IND+ in a 34-pin PowerCap Module (PCM) format, which requires a separate DS9034PC+ PowerCap. The DS1230Y-70IND itself is not reflow-compatible and must not be subjected to SMT thermal profiles.
DS1230Y-70IND Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 28-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-EDIP
DS1230Y-70IND FAQ
1.How can I place an order for DS1230Y-70IND through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1230Y-70IND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1230Y-70IND reliable?
The price and inventory of DS1230Y-70IND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1230Y-70IND is usually 5 days.
3.What payment methods are accepted for DS1230Y-70IND?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1230Y-70IND transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1230Y-70IND?
DS1230Y-70IND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1230Y-70IND order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1230Y-70IND?
For technical support, including DS1230Y-70IND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1230Y-70IND requirements.
6.How does Aetrix verify that DS1230Y-70IND is sourced from the original manufacturer or authorized distributors?
All DS1230Y-70IND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1230Y-70IND meets industry standards.
7.What is the process for return or replacement of DS1230Y-70IND?
All DS1230Y-70IND units undergo pre-shipment inspection (PSI). If there is an issue with DS1230Y-70IND, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1230Y-70IND part is unused and in its original packaging.
Return procedure for DS1230Y-70IND:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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