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Analog Devices Inc./Maxim Integrated DS1230Y-85
- Part No.:
- DS1230Y-85
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 28-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1230Y-85.pdf
- Description:
- IC NVSRAM 256KBIT PAR 28EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:3,349
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Product details
Overview
DS1230Y-85 from Maxim Integrated is a 256k (32k × 8) nonvolatile static RAM with integrated lithium backup, JEDEC-standard 28-pin DIP package, ±10% VCC operation (4.5V–5.5V), 70 ns access time, and 10-year data retention without external power. It serves as a drop-in replacement for volatile SRAMs in battery-backed memory systems requiring guaranteed data integrity during power loss.
For engineers reviewing the DS1230Y-85 datasheet, DS1230Y-85 pinout, DS1230Y-85 application, or DS1230Y-85 equivalent, this page delivers verified electrical specs, industrial-grade (-40°C to +85°C) thermal behavior, write-protection voltage threshold (4.25V), PowerCap compatibility, and real-world use cases in embedded controllers and legacy industrial storage.
Technical Context
The DS1230Y-85 integrates a 262,144-bit SRAM array, lithium energy source, and autonomous power-fail detection circuitry that switches to battery backup when VCC drops below 4.25V. Its control logic enforces unconditional write protection and high-impedance outputs during power transition, eliminating external supervision circuitry.
It operates in standard read/write modes using CE/OE/WE control signals with full static timing compliance - tACC = 70 ns, tWC = 70 ns, and tOE = 35 ns - while maintaining pin compatibility with 28-pin 32k×8 SRAMs and 28256 EEPROMs for seamless board-level substitution.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 256 kbit (32,768 × 8); supports byte-wide microprocessor interfaces without address multiplexing. |
| Access Time | 70 ns; enables direct interfacing with 14 MHz bus systems without wait states. |
| VCC Range | 4.5V to 5.5V (±10%); accommodates wide-input power rails common in industrial 5V systems. |
| Write Protection Threshold | 4.25V (min); triggers automatic battery switchover and write lock before data corruption occurs. |
| Data Retention | 10 years without power; guaranteed by internal lithium cell and sealed freshness seal activated at first power-on. |
| Operating Temperature | -40°C to +85°C (IND grade); qualified for deployment in uncontrolled industrial enclosures and outdoor equipment. |
| Package | 28-pin 740-mil Extended DIP (EDIP); JEDEC-standard footprint compatible with legacy socketed SRAM layouts. |
Pinout & Package
DS1230Y-85 uses a JEDEC-standard 28-pin 740-mil Extended DIP (EDIP) package with integrated lithium battery and nonvolatile control circuitry. The package is wave- or hand-solderable only (not reflow-compatible).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit address bus supporting full 32k-word addressing; TTL-compatible inputs with 0.8V/2.2V thresholds. |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus; outputs enter high-Z when CE or OE inactive; supports bus sharing. |
| CE | Chip Enable | Active-low chip select; initiates read/write cycles and determines output enable timing (tCO, tOD). |
| WE | Write Enable | Active-low write strobe; controls data latching and disables outputs during write (tODW = 25 ns). |
| OE | Output Enable | Active-low output gate; enables data drivers only during reads (tOE = 35 ns). |
| VCC | Power Supply | +5V supply input; powers SRAM core and control logic; monitored continuously for fail detection. |
| GND | Ground | Reference return path for all signals and internal circuitry; decoupling required per high-speed SRAM practice. |
| NC | No Connect | Pins 1, 3, 4, and 33 are unconnected; must remain floating or tied to GND per layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Response | Switches to lithium backup within 1.5 µs of VCC falling below 4.25V and locks writes unconditionally. |
| Freshness Seal Activation | Lithium cell remains electrically disconnected until first VCC ≥ 4.25V, preserving full 10-year capacity. |
| Unlimited Write Cycles | No endurance limit on write operations; eliminates wear-leveling firmware overhead in logging applications. |
| Direct Drop-in Replacement | Matches pinout and timing of 28-pin 32k×8 SRAMs and 28256 EEPROMs - no PCB or firmware changes needed. |
| Low-Power Standby | ICCS2 = 50–150 µA at VCC–0.5V; reduces system standby current in always-on industrial controllers. |
Applications
| Industrial PLC Data Logging | Medical Device Configuration Storage |
|---|---|
|
Use Scenario: Storing calibration coefficients, alarm thresholds, and runtime counters in programmable logic controllers operating in factory environments with frequent brownouts. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate-read/write memory with zero latency and guaranteed retention during 100+ ms power interruptions. Use Value: Eliminates need for external EEPROM write-cycle delays or battery-backed RTC modules; retains data across 10+ years of field operation without maintenance. |
Use Scenario: Holding patient-specific therapy parameters and device self-test results in portable infusion pumps and diagnostic monitors. IC Role / Device Role / Timing Role: Fail-safe memory buffer that preserves critical settings during battery swaps or AC power loss. Use Value: Meets IEC 62304 Class B software safety requirements via deterministic write-protection and 10-year data integrity without periodic refresh. |
| Avionics Black Box Memory | Legacy Telecom Equipment Buffer |
|
Use Scenario: Capturing flight-critical sensor snapshots and fault logs in airborne data acquisition units subject to extreme thermal cycling (-40°C to +85°C). IC Role / Device Role / Timing Role: Industrial-grade nonvolatile RAM ensuring uninterrupted memory operation across MIL-STD-810G temperature profiles. Use Value: Qualified for extended temperature range without derating; avoids solder joint fatigue risks associated with surface-mount PowerCap alternatives. |
Use Scenario: Replacing obsolete 28-pin 32k×8 SRAMs in telecom line cards where firmware updates require fast, reliable memory writes during hot-swaps. IC Role / Device Role / Timing Role: Pin-identical upgrade delivering same 70 ns timing but adding battery-backed retention without redesign. Use Value: Extends product lifecycle of legacy hardware by enabling field upgrades and configuration persistence without board rework. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1230AB-70IND+ | Narrower VCC tolerance (±5%, 4.75–5.25V); higher write-protection threshold (4.50V). | Better suited for stable 5V rails; less tolerant of brownout conditions than DS1230Y-85. | Select DS1230AB-70IND+ when system VCC regulation is tight and early write-lock is acceptable. |
| STK12C68-AI55 | Same 256k size and 28-pin DIP, but 55 ns access time and 5V-only (no ±10% support); different VTP (4.5V). | Higher speed but narrower supply margin; not rated for -40°C start-up performance. | Choose STK12C68-AI55 only if 55 ns timing is mandatory and industrial temperature qualification is secondary. |
Compared with DS1230AB-70IND+, DS1230Y-85 offers wider supply tolerance and earlier battery switchover - critical for brownout resilience - while STK12C68-AI55 trades supply flexibility for marginal speed gain but lacks full IND-grade validation.
Availability
DS1230Y-85 is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device configuration storage, and avionics black box memory requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DS1230Y-85 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and nonvolatile memory solutions for industrial, medical, and automotive applications.
The DS1230Y-85 belongs to Maxim's nonvolatile SRAM product line, engineered specifically to replace volatile memory in mission-critical systems where data integrity during power failure is non-negotiable.
FAQ
What is the guaranteed data retention period for DS1230Y-85 under zero-power conditions?
The DS1230Y-85 guarantees 10 years of data retention without external power, measured from the time VCC is first applied and the internal lithium cell is activated. This value is assured through component selection, process control, and design - not production-tested per unit - and applies across the full -40°C to +85°C operating range.
Does DS1230Y-85 require external circuitry to manage battery backup or write protection?
No. DS1230Y-85 contains fully integrated lithium backup, voltage monitoring, and automatic write-protection logic. When VCC falls below 4.25V, it autonomously switches to battery power and disables writes - no external supervisor IC, capacitors, or firmware intervention is needed for basic nonvolatile operation.
Can DS1230Y-85 be used as a direct replacement for standard 28-pin 32k×8 SRAMs?
Yes. DS1230Y-85 uses the JEDEC-standard 28-pin DIP footprint and matches the pinout and timing of conventional 32k×8 SRAMs. It requires no PCB changes and supports identical address/data/control signal routing - making it a true drop-in upgrade for battery-backed memory applications.
What is the difference between DS1230Y-85 and DS1230AB-85 variants?
The DS1230Y-85 supports ±10% VCC (4.5V–5.5V) and triggers write protection at 4.25V, whereas DS1230AB-85 uses ±5% VCC (4.75V–5.25V) and protects at 4.50V. Both share the same 28-pin DIP package, 70 ns timing, and -40°C to +85°C rating - but DS1230Y-85 is optimized for brownout-prone systems.
Is DS1230Y-85 compatible with reflow soldering processes?
No. DS1230Y-85 is supplied in a 28-pin EDIP package intended for wave or hand soldering only. Reflow soldering would damage the internal lithium cell. For surface-mount applications, the DS1230YP-85 PowerCap Module variant must be used with a separate DS9034PC+ PowerCap.
DS1230Y-85 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 28-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 85ns
- Access Time:
- 85 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-EDIP
DS1230Y-85 FAQ
1.How can I place an order for DS1230Y-85 through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1230Y-85 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1230Y-85 reliable?
The price and inventory of DS1230Y-85 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1230Y-85 is usually 5 days.
3.What payment methods are accepted for DS1230Y-85?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1230Y-85 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1230Y-85?
DS1230Y-85 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1230Y-85 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1230Y-85?
For technical support, including DS1230Y-85 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1230Y-85 requirements.
6.How does Aetrix verify that DS1230Y-85 is sourced from the original manufacturer or authorized distributors?
All DS1230Y-85 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1230Y-85 meets industry standards.
7.What is the process for return or replacement of DS1230Y-85?
All DS1230Y-85 units undergo pre-shipment inspection (PSI). If there is an issue with DS1230Y-85, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1230Y-85 part is unused and in its original packaging.
Return procedure for DS1230Y-85:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1230Y-85 Tags
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